@misc{KrauseBeleniotisBengtssonetal., author = {Krause, Sascha and Beleniotis, Petros and Bengtsson, Olof and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive}, series = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, journal = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, isbn = {978-1-6654-0307-8}, issn = {2576-7216}, doi = {10.1109/IMS19712.2021.9574839}, pages = {515 -- 518}, language = {en} } @misc{KrauseMichlerKoelpinetal., author = {Krause, Sascha and Michler, Fabian and K{\"o}lpin, Alexander and Rudolph, Matthias and Heinrich, Wolfgang}, title = {A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars}, series = {IEEE Microwave and Wireless Components Letters}, volume = {31}, journal = {IEEE Microwave and Wireless Components Letters}, number = {8}, issn = {1558-1764}, doi = {10.1109/LMWC.2021.3084338}, pages = {997 -- 1000}, language = {en} } @misc{KrauseZervosBeleniotisetal., author = {Krause, Sascha and Zervos, Christos and Beleniotis, Petros and Ritter, Dan and Rudolph, Matthias and Heinrich, Wolfgang}, title = {On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs}, series = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, journal = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-6654-9613-1}, doi = {10.1109/IMS37962.2022.9865474}, pages = {914 -- 917}, language = {en} } @misc{BeleniotisSchniederKrauseetal., author = {Beleniotis, Petros and Schnieder, Frank and Krause, Sascha and Haque, Sanaul and Rudolph, Matthias}, title = {An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT}, series = {International Journal of Microwave and Wireless Technologie}, volume = {14}, journal = {International Journal of Microwave and Wireless Technologie}, number = {2}, issn = {1759-0795}, doi = {10.1017/S1759078721001483}, pages = {134 -- 142}, language = {en} } @misc{BeleniotisKrauseZervosetal., author = {Beleniotis, Petros and Krause, Sascha and Zervos, Christos and Rudolph, Matthias}, title = {A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs}, series = {IEEE Transactions on Electron Devices}, volume = {71}, journal = {IEEE Transactions on Electron Devices}, number = {7}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3397234}, pages = {4058 -- 4065}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Chevtchenko, Serguei and Ritter, Dan and Rudolph, Matthias}, title = {Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD-compact model approach}, series = {IEEE Transactions on Electron Devices}, volume = {71 (2024)}, journal = {IEEE Transactions on Electron Devices}, number = {6}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3388386}, pages = {3582 -- 3589}, language = {en} } @misc{ZervosBeleniotisKrauseetal., author = {Zervos, Christos and Beleniotis, Petros and Krause, Sascha and Ritter, Dan and Rudolph, Matthias}, title = {The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs}, series = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, volume = {2023}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10289036}, pages = {297 -- 300}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Yazdani, Hossein and Rudolph, Matthias}, title = {Traps in GaN HEMTs : from characterization to model development and device optimization}, series = {2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)}, journal = {2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {979-8-3315-9172-4}, doi = {10.1109/BCICTS63111.2025.11211504}, pages = {1 -- 8}, abstract = {This paper reviews a comprehensive strategy designed to address the impact of traps across the entire field of GaN HEMT operation. It begins with the characterization of trap levels and the measurement of trap time constants. The study then progresses to TCAD simulations to examine the location of the observed trap levels and their effect on device performance. Finally, it introduces the development of a compact trap model grounded in Shockley-Read-Hall statistics. The proposed model is capable of accurately predicting trapping effects across all combinations of voltage, temperature, and time. The paper concludes by highlighting the synergy TCAD-compact-model, underscoring its utility in device optimization schemes.}, language = {en} }