@misc{KraemerMelianiLenketal., author = {Kraemer, Thorsten and Meliani, Chafik and Lenk, Friedrich and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers}, series = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, journal = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, isbn = {978-1-4244-2258-6}, doi = {10.1109/ICIPRM.2008.4702999}, pages = {1 -- 3}, abstract = {We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.}, language = {en} } @misc{KraemerLenkMaassdorfetal., author = {Kraemer, Thorsten and Lenk, Friedrich and Maaßdorf, Andre and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High Yield Transferred Substrate InP DHBT}, series = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, journal = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {1-4244-0875-X}, doi = {10.1109/ICIPRM.2007.381210}, pages = {407 -- 408}, abstract = {A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3\%SD, fmax = 250 GHz plusmn 5\%SD at a breakdown voltage of BVceo = 6 V.}, language = {en} }