@misc{NourbakhshAdelmannSongetal., author = {Nourbakhsh, Amirhasan and Adelmann, Christoph and Song, Yi and Lee, Chang Seung and Asselberghs, Inge and Huyghebaert, Cedric and Brizzi, Simone and Tallarida, Massimo and Schmeißer, Dieter and Elshocht, Sven van and Heyns, Marc and Kong, Jing and Palacios, Tom{\´a}s and De Gendt, Stefan}, title = {Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides}, series = {Nanoscale}, volume = {2015}, journal = {Nanoscale}, number = {7}, issn = {2040-3364}, doi = {10.1039/C5NR01128K}, pages = {10781 -- 10789}, abstract = {Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.}, language = {en} } @misc{WangKongOehringetal., author = {Wang, Li and Kong, Yi and Oehring, Michael and Song, Min and Pyczak, Florian}, title = {Atomic site occupancy of alloying elements and Laves phase stability in γ-γ′ Co-base superalloys}, series = {Journal of Alloys and Compounds}, volume = {906}, journal = {Journal of Alloys and Compounds}, issn = {1873-4669}, doi = {10.1016/j.jallcom.2022.164261}, abstract = {The atomic site occupancy of alloying elements in the ZrCo2 and HfCo2 based Laves phases formed in the Co-9Al-9W-2Zr and Co-9Al-9W-2Hf alloys was experimentally determined by the combined techniques of energy-dispersive X-ray spectroscopy mapping with atomic resolution and the atom location by channeling enhanced microanalysis (ALCHEMI) method. The results show that both Al and W occupy the Zr site in the C15 and the Hf site in the C36 crystal structure. The atomic locations of Al and W were further confirmed by comparing calculated inelastic cross-sections with experimental ALCHEMI results. Using the determined atomic site occupancies of alloying elements, special quasirandom structure solid solution models with 192 atoms were constructed and employed in first-principles calculations. It is found theoretically that the energy of formation of the C15 structure is always lower than that of the C36 structure at 0 K in both ZrCo2 and HfCo2 phases, no matter whether Al and W are incorporated or not. However, further ab initio molecular dynamics simulations suggest that lattice vibration at finite temperature contributes significantly to the phase stability, stabilizing the C36 structure compared to the C15 type for the (Hf, Al, W)Co2 phase at finite temperature, which fits well with the experimental findings.}, language = {en} }