@incollection{KoehlerMoehringNoekeletal., author = {K{\"o}hler, Ekkehard and M{\"o}hring, Rolf H. and N{\"o}kel, K. and W{\"u}nsch, Gregor}, title = {Optimization of signalized traffic networks}, language = {en} } @inproceedings{HilsenbeckLenkLossyetal., author = {Hilsenbeck, Jochen and Lenk, Friedrich and Lossy, Richard and W{\"u}rfl, Joachim and Kohler, K. and Obloh, H.}, title = {DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line}, series = {IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000}, booktitle = {IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6258-6}, doi = {10.1109/ISCS.2000.947181}, pages = {351 -- 356}, abstract = {DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties}, language = {en} } @misc{RichterKukkadapuWestbrooketal., author = {Richter, Sandra and Kukkadapu, Goutham and Westbrook, Charles K. and Braun-Unkhoff, Marina and Naumann, Clemens and K{\"o}hler, Markus and Riedel, Uwe}, title = {A combined experimental and modeling study of combustion properties of an isoparaffinic alcohol-to-jet fuel}, series = {Combustion and Flame}, volume = {240}, journal = {Combustion and Flame}, publisher = {Elsevier BV}, issn = {0010-2180}, doi = {10.1016/j.combustflame.2022.111994}, pages = {15}, language = {en} } @misc{OpitzWunderlichBendjusetal., author = {Opitz, Joerg and Wunderlich, Christian and Bendjus, B. and Cikalova, U. and Wolf, C. and Naumann, S. and Lehmann, A. and Barth, M. and Duckhorn, Frank and K{\"o}hler, B. and Tsch{\"o}ke, K. and Windisch, T. and Tsch{\"o}pe, Constanze and Moritz, T. and Scheithauer, U.}, title = {Materialdiagnose und integrale Pr{\"u}fverfahren f{\"u}r keramische Bauteile}, series = {Keramische Zeitschrift}, volume = {68}, journal = {Keramische Zeitschrift}, number = {4-5}, publisher = {Springer Science and Business Media LLC}, address = {Berlin ; Heidelberg}, issn = {0023-0561}, doi = {10.1007/BF03400267}, pages = {249 -- 254}, abstract = {Hochleistungskeramiken findet man heute h{\"a}ufig als kritische Komponente in neuentwickelten Systemen f{\"u}r Zukunftsanwendungen. Die Zuverl{\"a}ssigkeit des gesamten Systems basiert hierbei oft auf der kritischen keramischen Komponente. F{\"u}r diese oft neuentwickelten keramischen Materialien werden neue Methoden f{\"u}r die Prozesssteuerung, Materialdiagnostik und Struktur{\"u}berwachung ben{\"o}tigt. In diesem Artikel werden drei f{\"u}r die Keramikcharakterisierung am Fraunhofer-Institut f{\"u}r Keramische Technologien und Systeme IKTS weiter entwickelte Technologien und Verfahren beschrieben und deren Einsatz anhand von Beispielen illustriert. Dazu werden die Laser-Speckle-Photometrie, die optische Koh{\"a}renztomographie und die Klanganalyse in Kombination mit einer entsprechenden akustischen Mustererkennung als leistungsf{\"a}hige Verfahren f{\"u}r die Materialdiagnostik im Bereich der keramischen Materialien vorgestellt.}, language = {de} }