@misc{DziallasFatemiKorndoerferetal., author = {Dziallas, Giannino and Fatemi, Adel and Kornd{\"o}rfer, Falk and Peczek, Anna and Kissinger, Dietmar and Zimmermann, Lars and Malignaggi, Andrea and Kahmen, Gerhard}, title = {A Monolithically Integrated Optical Bandpass Receiver in 0.25μm SiGe BiCMOS Technology for Microwave-Photonic Applications}, series = {2020 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 9-11, 2020 ONLINE}, journal = {2020 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 9-11, 2020 ONLINE}, isbn = {978-1-7281-8436-4}, doi = {10.1109/A-SSCC48613.2020.9336119}, pages = {4}, language = {en} } @misc{SuetbasKahmen, author = {S{\"u}tbas, Batuhan and Kahmen, Gerhard}, title = {A 7.2-mW V-Band Frequency Doubler with 14\% Total Efficiency in 130-nm SiGe BiCMOS}, series = {IEEE Microwave and Wireless Components Letters}, volume = {32}, journal = {IEEE Microwave and Wireless Components Letters}, number = {6}, issn = {1531-1309}, doi = {10.1109/LMWC.2022.3141557}, pages = {579 -- 582}, language = {en} } @misc{DziallasFatemiPeczeketal., author = {Dziallas, Giannino and Fatemi, Adel and Peczek, Anna and Zimmermann, Lars and Malignaggi, Andrea and Kahmen, Gerhard}, title = {A 56-Gb/s Optical Receiver with 2.08-µA Noise Monolithically Integrated into a 250-nm SiGe BiCMOS Technology}, series = {IEEE Transactions on Microwave Theory and Techniques}, volume = {70}, journal = {IEEE Transactions on Microwave Theory and Techniques}, number = {1}, issn = {0018-9480}, doi = {10.1109/TMTT.2021.3104838}, pages = {10}, language = {en} } @misc{IseiniMalignaggiKorndoerferetal., author = {Iseini, Festim and Malignaggi, Andrea and Kornd{\"o}rfer, Falk and Inac, Mesut and Kahmen, Gerhard}, title = {Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology}, series = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)}, journal = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)}, doi = {10.1109/BCICTS53451.2022.10051703}, pages = {4}, language = {en} } @misc{Kahmen, author = {Kahmen, Gerhard}, title = {SiGe BiCMOS as Enabling Technology for Next Generation RF \& THz Systems}, series = {EuMIC 2021 Abstract Cards, 16th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom, 2022}, journal = {EuMIC 2021 Abstract Cards, 16th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom, 2022}, publisher = {IEEE}, address = {Piscataway, NJ}, doi = {10.23919/EuMIC50153.2022.9783893}, pages = {S. 21}, language = {en} } @misc{SuetbasNgyWesseletal., author = {S{\"u}tbas, Batuhan and Ngy, Herman Jalli and Wessel, Jan and K{\"o}lpin, Alexander and Kahmen, Gerhard}, title = {Low-Power Ka- and V-Band Miller Compensated Amplifiers in 130-nm SiGe BiCMOS Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783785}, pages = {4}, language = {en} } @misc{EissaFischerMausolfetal., author = {Eissa, Mohamed Hussein and Fischer, Gunter and Mausolf, Thomas and R{\"u}cker, Holger and Malignaggi, Andrea and Kahmen, Gerhard}, title = {220-320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology}, series = {IEEE Microwave and Wireless Components Letters}, volume = {32}, journal = {IEEE Microwave and Wireless Components Letters}, number = {11}, issn = {1531-1309}, doi = {10.1109/LMWC.2022.3181407}, pages = {1335 -- 1338}, language = {en} } @misc{SuetbasNgWesseletal., author = {S{\"u}tbas, Batuhan and Ng, Herman Jalli and Wessel, Jan and K{\"o}lpin, Alexander and Kahmen, Gerhard}, title = {A V-band Low-Power and Compact Down-Conversion Mixer with Low LO Power in 130-nm SiGe BiCMOS Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, doi = {10.23919/EuMIC50153.2022.9783953}, pages = {4}, language = {en} } @misc{UhlmannPerezBoschQuesadaFritscheretal., author = {Uhlmann, Max and P{\´e}rez-Bosch Quesada, Emilio and Fritscher, Markus and P{\´e}rez, Eduardo and Schubert, Markus Andreas and Reichenbach, Marc and Ostrovskyy, Philip and Wenger, Christian and Kahmen, Gerhard}, title = {One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing}, series = {21st IEEE Interregional NEWCAS Conference (NEWCAS)}, journal = {21st IEEE Interregional NEWCAS Conference (NEWCAS)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-0024-6}, issn = {2474-9672}, doi = {10.1109/NEWCAS57931.2023.10198073}, pages = {5}, abstract = {The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.}, language = {en} }