@misc{SegabinazziFerreiraGeorgeChenetal., author = {Segabinazzi Ferreira, Raphael and George, Nevin and Chen, Junchao and H{\"u}bner, Michael and Krstic, Milos and Nolte, J{\"o}rg and Vierhaus, Heinrich Theodor}, title = {Configurable Fault Tolerant Circuits and System Level Integration for Self-Awareness}, series = {Proceedings of the Work in Progress Session held in connection with SEAA 2019, the 45th EUROMICRO Conference on Software Engineering and Advanced Applications and DSD 2019, the 22nd EUROMICRO Conference on Digital System Design}, journal = {Proceedings of the Work in Progress Session held in connection with SEAA 2019, the 45th EUROMICRO Conference on Software Engineering and Advanced Applications and DSD 2019, the 22nd EUROMICRO Conference on Digital System Design}, publisher = {SEA-Publications}, address = {Kallithea, Chalkidiki (Greece)}, isbn = {978-3-902457-54-7}, doi = {10.26127/BTUOpen-5050}, pages = {2}, abstract = {Scaling minimum features of ICs down to the 10nm- area and below has allowed high integration rates in electronics. Scaling at supply voltages of 1V and below also implies a rising level of stress which drives aging effects that reduce switching speed and the expected life time. Additionally, vulnerability from particle radiation is increased. Hence, fault detection and on- line correction become a must for many applications. However, not only fault tolerance but self-awareness becomes also an advantage. Provided that by being aware of its own healthy state allow optimized configurations regarding system operation modes and configurable hardware mechanism. This paper shows a preliminary work in a configurable circuit and explores its configuration possibilities when integrated into a complete system.}, language = {en} } @misc{AndjelkovicVeleskiChenetal., author = {Andjelkovic, Marko and Veleski, Mitko and Chen, Junchao and Simevski, Aleksandar and Krstic, Milos}, title = {A Particle Detector Based on Pulse Stretching Inverter Chain}, series = {26th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2019), Genova}, journal = {26th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2019), Genova}, isbn = {978-1-7281-0996-1}, doi = {10.1109/ICECS46596.2019.8964644}, pages = {4}, language = {en} } @misc{AndjelkovicChenSimevskietal., author = {Andjelkovic, Marko and Chen, Junchao and Simevski, Aleksandar and Stamenkovic, Zoran and Krstic, Milos and Kraemer, Rolf}, title = {A Review of Particle Detectors for Space-Borne Self-Adaptive Fault Tolerant Systems}, series = {18th IEEE East-West Design and Test Symposium (EWDTS 2020), Varna, Bulgaria, 04 - 07 September 2020}, journal = {18th IEEE East-West Design and Test Symposium (EWDTS 2020), Varna, Bulgaria, 04 - 07 September 2020}, publisher = {IEEE}, isbn = {978-1-7281-9899-6}, issn = {2472-761X}, doi = {10.1109/EWDTS50664.2020.9225138}, language = {en} } @misc{FritscherUhlmannOstrovskyyetal., author = {Fritscher, Markus and Uhlmann, Max and Ostrovskyy, Philip and Reiser, Daniel and Chen, Junchao and Schubert, Andreas and Schulze, Carsten and Kahmen, Gerhard and Fey, Dietmar and Reichenbach, Marc and Krstic, Milos and Wenger, Christian}, title = {Area-efficient digital design using RRAM-CMOS standard cells}, series = {2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)}, volume = {18}, journal = {2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)}, publisher = {IEEE}, isbn = {979-8-3503-5411-9}, issn = {2159-3477}, doi = {10.1109/ISVLSI61997.2024.00026}, pages = {81 -- 87}, abstract = {Extending the scalability of digital integrated circuits through novel device concepts is an attractive option. Among these concepts, resistive random access memory (RRAM) devices allow fast and nonvolatile operation. However, building large memristive systems is still challenging since large analog circuits have to be designed and integrated. In this paper, we propose a novel solution - the implementation of digital standard cells by the means of RRAM devices. While this methodology is universal, with applications ranging from few-device-circuits to large macroblocks, we demonstrate it for a 2T2R-cell. The benefits of using RRAM devices are demonstrated by implementing a NAND standard cell merely consuming the area of two transistors. This cell is about 25 \% smaller than the equivalent CMOS NAND in the same technology. We use these cells to implement a half adder, beating the area of the equivalent CMOS implementation using more sophisticates gates by 15 \%. Lastly, we fully integrate this novel standard cell into a digital standard cell library and perform a synthesis and layout of a RISC-V CPU core.}, language = {en} } @misc{FritscherUhlmannOstrovskyyetal., author = {Fritscher, Markus and Uhlmann, Max and Ostrovskyy, Philip and Reiser, Daniel and Chen, Junchao and Wen, Jianan and Schulze, Carsten and Kahmen, Gerhard and Fey, Dietmar and Reichenbach, Marc and Krstic, Milos and Wenger, Christian}, title = {RISC-V CPU design using RRAM-CMOS standard cells}, series = {IEEE transactions on very large scale integration (VLSI) systems}, journal = {IEEE transactions on very large scale integration (VLSI) systems}, editor = {Wenger, Christian}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, address = {New York}, issn = {1063-8210}, doi = {10.1109/TVLSI.2025.3554476}, pages = {1 -- 9}, abstract = {The breakdown of Dennard scaling has been the driver for many innovations such as multicore CPUs and has fueled the research into novel devices such as resistive random access memory (RRAM). These devices might be a means to extend the scalability of integrated circuits since they allow for fast and nonvolatile operation. Unfortunately, large analog circuits need to be designed and integrated in order to benefit from these cells, hindering the implementation of large systems. This work elaborates on a novel solution, namely, creating digital standard cells utilizing RRAM devices. Albeit this approach can be used both for small gates and large macroblocks, we illustrate it for a 2T2R-cell. Since RRAM devices can be vertically stacked with transistors, this enables us to construct a nand standard cell, which merely consumes the area of two transistors. This leads to a 25\% area reduction compared to an equivalent CMOS nand gate. We illustrate achievable area savings with a half-adder circuit and integrate this novel cell into a digital standard cell library. A synthesized RISC-V core using RRAM-based cells results in a 10.7\% smaller area than the equivalent design using standard CMOS gates.}, language = {en} }