@inproceedings{LazarevaKovalMuelleretal., author = {Lazareva, I. and Koval, Yuri and M{\"u}ller, P. and Paloumpa, Ioanna and M{\"u}ller, Klaus and Schmeißer, Dieter}, title = {Field effect transistor of graphitized polyimide with P(VDF-TrFE) as gate insulator}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 195}, abstract = {Surfaces of polyimide films were graphitized by low-energy ion irradiation. The conductivity was between 10-5 to 200 S/cm [1]. We prepared field effect transistors using this material. Ferroelectric P(VDF-TrFE) was used as gate insulator. The thickness of P(VDF-TrFE) varied from 120 nm to 1200 nm. Properties of P(VDF-TrFE) were investigated by current-voltage measurements of metal/ P(VDF-TrFE)/metal capacitors. We have found that at room temperature, the coercive field of P(VDF-TrFE) does not depend on the film thickness. At lower temperatures the coercive field increases proportionally to the reciprocal temperature. Remnant polarization is 9.5 µC/cm2. It slightly rises with decreasing temperature. Our recent results of field effect mobility, carrier concentration and threshold voltage are presented. [1] I. Lazareva, Y. Koval, M. Alam, S. Str{\"o}msd{\"o}rfer, P. M{\"u}ller, Appl. Phys. Lett. 90, 262108 (2007)}, language = {en} } @inproceedings{HenkelTorcheSchwiertzetal., author = {Henkel, Karsten and Torche, Mohamed and Schwiertz, Carola and Paloumpa, Ioanna and Sohal, Rakesh and M{\"u}ller, Klaus and Schmeißer, Dieter}, title = {Inorganic and organic layers for high-k and organic memory applications}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 127}, abstract = {We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the functional layer. Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts. For the inorganic stack our attempt is to combine higk-k dielectrics with high band gap semiconductors (SiC). Praseodymium oxide layers are prepared by electron beam evaporation from Pr6O11 powder and in situ controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin ox- ide on top of the semiconductor and following annealing steps or by a wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectro-scopic characterisation we investigate the stability of the various inter-faces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states.}, language = {en} } @inproceedings{MuellerHenkelPaloumpaetal., author = {M{\"u}ller, Klaus and Henkel, Karsten and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {P(VDF/TrFE) as ferroelectric insulation layer for organic field effect transistors}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 101}, abstract = {The ferroelectric polymer poly(vinylidene fluoride trifluoroethylene)(P(VDF-TrFE)) is used as insulating material for organic field effect tran-sistors (OFET) and metal-insulator-semiconductor (MIS)-structures. For the MIS-structures, we find the typical hysteresis in the CV charac-teristic upon increasing the voltage scan window. Based on these results, we fabricate OFET with regioregular poly(3-hexlythiophene)(P3HT) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers of spincoated P(VDF-TrFE) as gate insulation (100nm). The drain-source current of the OFET is reversible affected by the polarized gate, which gives opportunities for organic nonvolatile memory elements. We present characteristic features like the hysteretic drain current response or the data retention. Furthermore, we present measurements with Kelvin probe force microscopy, a method which gives informations on the lateral distributions of the surface potential.}, language = {en} } @inproceedings{RichterMuellerPhilipetal., author = {Richter, Matthias and M{\"u}ller, Klaus and Philip, Shine and Paloumpa, Ioanna and Henkel, Karsten and Schmeißer, Dieter}, title = {Temperature dependence of organic solar cell parameters}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 44}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 44}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 671}, abstract = {The influence of an annealing step on the parameters of bulk heterojunction organic solar cells is investigated. In order to fabricate the solar cells we use glass coated with ITO (Indiumtinoxide) as a substrate on which the active layer consisting of P3HT and PCBM is spincoated. Al-electrodes are evaporated on top of the active layer. We use PEDOT:PSS as buffer layer. Each sample is annealed at different temperatures for a short time. Between every temperature step the I-V characteristic of the cell is measured. The following parameters are derived afterwards: FF, Isc (density), Voc. Also the efficiency is estimated. The results show a maximum cell efficiency for drying at 100°C for 20sec. A further important step for preparation is the drying procedure of the PEDOT:PSS layer. Here an improvement of about 50\% in cell efficiency is measured after drying at 50°C for 5 days under inert gas atmosphere.}, language = {en} } @inproceedings{HoffmannbeckRichterStaedteretal., author = {Hoffmannbeck, David and Richter, Matthias and St{\"a}dter, Matthias and Paloumpa, Ioanna and Henkel, Karsten and Schmeißer, Dieter}, title = {Spectroscopic and microscopic characterization of potential catalysts for the hydrogenation of CO2}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 483}, abstract = {The reduction of CO2 emissions is a general demand of the society in order to avoid irreversible climate changes. We are investigating potential catalysts for the hydrogenation of CO2 in particular for its application in the so called oxyfuel combustion process. In order to understand the catalytic behavior of the investigated materials we use the techniques X-Ray Photoemission (XPS) and -absorption (XAS) Spectroscopy as well as X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The prospective of our work is to figure out the electronic and structural properties of the material and to optimize proper catalysts or design new ones for best catalytic activity. Beside the spectro-microscopic investigations the catalysts are tested under Sabatier reaction conditions in terms of activity, stability and sensitivity against poisoning. In our preliminary work we constructed a Sabatier reactor system with analytical parts based on infrared absorption and mass spectroscopy modules. First spectroscopic and catalytic results achieved on a commercially available Ru/Al2O3 catalyst will be presented.}, language = {en} } @inproceedings{MbuaMuellerRichteretal., author = {Mbua, Roy and M{\"u}ller, Klaus and Richter, Matthias and Henkel, Karsten and Paloumpa, Ioanna and Schmeißer, Dieter and Kramm, Ulricke}, title = {Investigation of new Catalysts for PEM Fuel Cells}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 483}, abstract = {Increasing green house emissions amplify global warming concerns worldwide. Fuel cells, based on polymer electrolyte membranes (PEM) are part of the solution to this issue. We aim at developing and testing new catalysts for fuel cells. Platinum catalysts perform best in PEM fuel cells to date but they are very expensive. For fuel cells to be perfectly applicable and economically affordable, an alternative catalyst with similar or even greater efficiency should be developed. Metal phthalocyanines are known to be good oxygen reduction catalysts and are associated with high electron transfer properties. We investigated Cobalt Phthalocyanine in its pure state mixed with Carbon Black (CoPc:Carbon Black=1:9) untreated and also after a treatment in N2 at several temperatures, up to 1000°C for 30 minutes. Results of XPS and EDX analyses reveal that the treatment at higher temperatures causes a rearrangement in the chemical states of Co, N and C atoms. Furthermore, results of cycling voltammetry (CV) analysis reveal that CoPc treated in N2 at 800°C exhibited a higher current density, in conclusion, a higher catalytic activity than the untreated CoPc.}, language = {en} } @inproceedings{RichterStaedterPaloumpaetal., author = {Richter, Matthias and St{\"a}dter, Matthias and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Multiple Auger Decay at resonant photo-excitation in carbon thin films}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {We use resonant photoemission at the C1s edge to study the electronic structure of HOPG, graphene flakes and monolayer graphene. We find remarkable differences in the profile of the Auger decay channels, which we attribute to an additional multiple-Auger with a three-hole final state. A prerequisite for the appearance of this decay mechanism is the existence of localized excitonic states, which cause the appearance of the multiple Auger decay. Defects (pits, holes, steps and kinks) can act as localized excitonic states. We use those effects to identify the existence and the quantity of such defect states within the pi*-band regime in carbon thin films, because the intensity of the three-hole Auger decay is varying with the defect density of the carbon films. The defect-excitonic states can be either localized in the band-gap at the M-point or in case of surface defects like steps, kinks or pits even at the K-point by losing the pure sp2 character of the films. We find that the appearance of the multiple Auger decay is different for multilayer and monolayer graphene. In particular the interaction of impurities leads to broadening of the C1s core levels. The three-hole Auger decay spectroscopy is a new method to detect such contaminations with a high sensitivity.}, language = {en} } @inproceedings{GoriachkoMuellerPaloumpaetal., author = {Goriachko, Andrii and M{\"u}ller, Klaus and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Scanning Kelvin Probe Microscopy Investigations of Au-P3HT-Au structures for Organic Field Effect Transistors}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {We report on the scanning Kelvin probe microscopy (SKPM) investigation of the source-channel-drain structures of organic field effect transistor (OFET). A poly-3-hexyl-thiophen (P3HT) organic semiconductor film, spin-coated on a glass-substrate and 65 nm thick, is used as a 2 mkm channel between Au source (drain) electrodes. Depending on the preparation conditions, the P3HT film consists of either amorphous nm-seized molecular clsuters or mkm-long chains. The SKPM allows mapping of electric potential along with the surface topography on the DC-biased structures (8V applied between source and drain). It reveals a linear potential fall in the channel region as well as the abscence of potential jumps (contact resistance) in the electrode/channel regions. This is a direct indication of the top-gate OFET type advantage, which the given structure is suited for. Due to the high spatial resolution of the UHV-based SKPM, doping inhomogenities of the p-type P3HT semiconductor as well as the space charge region on the electron injecting electrode are observed. In addition we present SKPM investigations of the structure with source and drain electrodes but without a semiconductor, showing electric field configuration for the given electrodes geometry.}, language = {en} } @inproceedings{MuellerPaloumpaSchwiertzetal., author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Schwiertz, Carola and Jahnke, Agnes and Schmeißer, Dieter}, title = {All Polymer Field-Effect-Transistors based on Low-Cost-Microstructuring}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Thin film transistors with P3HT as active layer have been prepared by spin coating. The electrodes for source and drain have been prepared by a low cost plotting method with colloidal graphite or carbon black as the conducting material. PEDOT or carbon black was used as gate electrode. The devices, prepared by different methods and materials have been characterized by electrical measurements, for example, their transfer and output characteristics. Furthermore, the influence of different materials on effects like hysteresis or reproducibility will be compared. In addition, we describe a project investigating new types of biosensors with functionalized gate electrodes. Exchanges of dipole moments or charges by immobilisation of biomolecules will change the electrical characteristic of the transistor, which leads to a sensing signal proportional to their amount.}, language = {en} } @inproceedings{StyervoyedovPaloumpaSchmeisser, author = {Styervoyedov, Andriy and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Composition and thermal stability of thin functional oxidic (Pr, La, Y) and metallic (Ru, Ti) layers on Si and SiC substrates}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Thin Pr-, La- and Y- based oxide layers for applications as gate dielectric in metal-oxide-semiconductor (MOS) structures are investigated with x-ray photoelectron spectroscopy. The films with a thickness of around 2nm have been prepared on Si and SiC wafers by various chemical deposition methods based on nitrate solutions. In addition, we report on Ti- and Ru- based metal contacts prepared in the same way. The film composition is analysed and annealing steps in vacuum up to 900∘C have been applied to test their thermal stability. The interface characteristics, surface composition and thermal stability of MOS functional multilayers have been studied and will be presented.}, language = {en} } @inproceedings{HenkelPaloumpaMuelleretal., author = {Henkel, Karsten and Paloumpa, Ioanna and M{\"u}ller, Klaus and Schmeißer, Dieter}, title = {P(VDF/TrFE) as a ferroelectric dielectric for Organic Field effect Transistors in MFIS structure}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {MFIS structures consisting of metal, ferroelectric poly[vinylidene fluoride trifluoroethylene](P[VDF/TrFE]), insulator, semiconductor (Si) are fabricated and the influence of the polarization of the P(VDF/TrFE) on the CV characteristics of these structures is investigated. We find a characteristic ferroelectric hysteresis in the CV curves upon increasing the voltage scan window (e.g.-U...U,U=6...30V, |UP(VDF/TrFE)|≤15V, dP(VDF/TrFE)=300 nm). A writing process with adequate electric fields causes large shifts in the flatband voltage ( Δ UFB>4V for the quoted example before) which are stable over days. We report on our investigations which focus on the switching behavior by varying the parameters like polymer thickness, writing field strength and time, long time stability, reversing voltage and insulating material (SiO2, PMMA (Polymethylmetacrylate)). This material combination is favorable for transfer into our full organic concept of field effect transistors for application as a nondestructive readout memory (NDRO) cell.}, language = {en} } @inproceedings{MuellerPaloumpaHenkeletal., author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Henkel, Karsten and Schmeißer, Dieter}, title = {Organic Field Effect Transistors with polymer high-k dielectric insulator}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Organic field effect transistors consisting of the copolymer poly(vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and P3HT (poly(3-hexlythiophene)) as active layer have been fabricated. The influence of P(VDF-TrFE) on the transconductance of organic field effect transistors was investigated and enhanced gate effects are observed compared to similar transistors with PMMA (Polymethylmetacrylate) as gate dielectric. Due to the high dielectric constant of P(VDF-TrFE) (DK=12) an operation voltage smaller than for a conventional organic dielectric like PMMA (DK=3.3) was observed. The thickness of the spincoated dielectric layers is in the range of 2microns and in consequence, no significant hysteresis was found, a prerequisite for transistor operation.}, language = {en} } @inproceedings{GeussMuellerPaloumpaetal., author = {Geuss, Markus and M{\"u}ller, Klaus and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Surface Potential profiling on operating full organic thin film transistors by Kelvin probe force microscopy}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Kelvin-AFM is employed to study all polymer organic thin film transistors which are promising candidates for low cost - low performance applications like active matrix displays, sensors or single-serving devices. We use bottom contact source-drain- electrode structures of different organic materials like carbon-black or graphite plotted on a printing foil. Semiconducting regioregular Poly(3-Hexylthiophene-2,5-diyl) (P3HT) was subsequently deposited by spin coating. Surface potential profiles across the transistor channel were measured by Kelvin-AFM for various source-drain potential differences and signs. We found that contact resistances cause characteristic steps in the surface potential near the channel edges which vary with the electrode material. Furthermore, nonlinearities appear in the potential gradient which possibly give evidence for lateral inhomogeneities of the carrier mobilities. In summary, surface potential imaging with high lateral resolution ( approx. 100 nm) is introduced as a powerful tool for the characterisation of the transistor performance and the selection of suitable low cost electrode materials.}, language = {en} }