@inproceedings{LippertDabrowskiCostinaetal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{LippertDabrowskiOberbecketal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Oberbeck, Lars and Schroeder, Uwe and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films}, series = {Journal of the electrochemical society}, volume = {155}, journal = {Journal of the electrochemical society}, number = {5}, issn = {1945-7111}, doi = {10.1149/1.2875741}, pages = {G97 -- G114}, language = {en} } @misc{SanaTetznerDabrowskietal., author = {Sana, Prabha and Tetzner, Henriette and Dabrowski, Jarek Marek and Tarnawska, Lidia Lupina and Costina, Ioan and Thapa, Sarad and Storck, Peter and Schr{\"o}der, Thomas and Z{\"o}llner, Marvin Hartwig}, title = {Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4963826}, pages = {135103}, language = {en} } @misc{LukosiusLippertDabrowskietal., author = {Lukosius, Mindaugas and Lippert, Gunther and Dabrowski, Jarek Marek and Kitzmann, Julia and Lisker, Marco and Kulse, Philipp and Kr{\"u}ger, Andreas and Fursenko, Oksana and Costina, Ioan and Trusch, Andreas and Yamamoto, Yuji and Wolff, Andre and Mai, Andreas and Schr{\"o}der, Thomas}, title = {Graphene Synthesis and Processing on Ge Substrates}, series = {ECS transactions}, volume = {75}, journal = {ECS transactions}, number = {8}, issn = {1938-6737}, doi = {10.1149/07508.0533ecst}, pages = {533 -- 540}, language = {en} } @misc{KostoTschammerMoralesetal., author = {Kosto, Yuliia and Tschammer, Rudi and Morales, Carlos and Henkel, Karsten and Flege, Jan Ingo and Ratzke, Markus and Fischer, Inga Anita and Costina, Ioan and Alvarado Chavarin, Carlos and Wenger, Christian}, title = {Rational design and development of room temperature hydrogen sensors compatible with CMOS technology: a necessary step for the coming renewable hydrogen economy}, series = {Proceedings of iCampus Conference Cottbus 2024}, journal = {Proceedings of iCampus Conference Cottbus 2024}, publisher = {AMA Service GmbH}, address = {Wunstorf}, isbn = {978-3-910600-00-3}, doi = {10.5162/iCCC2024/P21}, pages = {182 -- 185}, abstract = {The transition towards a new, renewable energy system based on green energy vectors, such as hydrogen, requires not only direct energy conversion and storage systems, but also the development of auxiliary components, such as highly sensitive hydrogen gas sensors integrated into mass devices that operate at ambient conditions. Despite the recent advances in nanostructured metal oxide thin films in terms of simple fabrication processes and compatibility with integrated circuits, high sensitivity, and short response/recovery times usually require the use of expensive noble metals or elevated tem-peratures (>250 ºC), which results in high power consumption and poor long-term stability. This article presents the first steps of the work on developing a novel resistive hydrogen gas sensor based on ultrathin cerium oxide films, compatible with complementary metal oxide semiconductor technology and capable of operating at room temperature. Here, we show a multidisciplinary bottom-up approach combining different work areas for the sensor development, such as sensor architecture, sensing mechanism and deposition strategy of the active layer, electrical contact design depending on the desired electrical output, and fast testing under controlled environments.}, language = {en} }