@misc{MuellerPaloumpaHenkeletal., author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Henkel, Karsten and Schmeißer, Dieter}, title = {A polymer high-k dielectric insulator for organic field effect Transistors}, series = {Journal of Applied Physics}, volume = {98}, journal = {Journal of Applied Physics}, number = {5}, issn = {0021-8979}, pages = {S. 056104}, language = {en} } @misc{SchmeisserHenkelMuelleretal., author = {Schmeißer, Dieter and Henkel, Karsten and M{\"u}ller, Klaus and Tallarida, Massimo}, title = {Interface Reactions in Ultrathin Functional Dielectric Films}, language = {en} } @misc{LazarevaKovalMuelleretal., author = {Lazareva, I. and Koval, Yuri and M{\"u}ller, P. and M{\"u}ller, Klaus and Henkel, Karsten and Schmeißer, Dieter}, title = {Interface screening and imprint in pol(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors}, language = {en} } @incollection{MuellerBurkovMandaletal., author = {M{\"u}ller, Klaus and Burkov, Yevgen and Mandal, Dipankar and Henkel, Karsten and Paloumpa, Ioanna and Goryachko, Andriy and Schmeißer, Dieter}, title = {Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices}, series = {Organic Electronics : structural and Electronic Properties of OFETs}, booktitle = {Organic Electronics : structural and Electronic Properties of OFETs}, editor = {W{\"o}ll, Christof}, publisher = {Wiley-VCH}, address = {Weinheim}, isbn = {978-3-527-40810-8}, pages = {445 -- 468}, language = {en} } @misc{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Paloumpa, Ioanna and M{\"u}ller, Klaus and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Grenzfl{\"a}chenoptimierung f{\"u}r funktionale D{\"u}nnschichtsysteme: Oxide und Polymere}, series = {Forum der Forschung}, volume = {9}, journal = {Forum der Forschung}, number = {18}, issn = {0947-6989}, pages = {49 -- 56}, language = {de} } @misc{MuellerHenkelMandaletal., author = {M{\"u}ller, Klaus and Henkel, Karsten and Mandal, Dipankar and Seime, Bernd and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Spin coated organic ferroelectric films for non volatile memories}, language = {en} } @misc{MandalHenkelMuelleretal., author = {Mandal, Dipankar and Henkel, Karsten and M{\"u}ller, Klaus and Schmeißer, Dieter}, title = {Band gab determination of P(VDF-TrFE) copolymer film by electron energy loss spectroscopy}, language = {en} } @inproceedings{GarainHenkelMandaletal., author = {Garain, Samiran and Henkel, Karsten and Mandal, Dipankar and Schmeißer, Dieter}, title = {One-Pot Synthesis of Copper Oxide Nanowires and PVDF/CuO Composite Films for Piezoelectric Energy Harvesting Application}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 53,3}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 53,3}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 135}, abstract = {Copper oxide (CuO) is an attractive p-type oxide semiconductor with narrow band gap that has intriguing properties such as non-toxicity, chemical stability, electrocatalytic activity, abundant availability and low production cost. Polymeric materials have attracted great interest owing to their high flexibility, light weight, low cost production and high resistance against corrosion. Poly(vinylidene fluoride) (PVDF) is a commonly used piezoelectric polymer due to its excellent flexibility and piezoelectric properties. In this work, we adopted a one-pot synthesis of CuO nanowires by facile and selective chemical etching process of Cu substrate. XPS, XRD, SEM data ascribed the formation of polycrystalline CuO nanowires over the entire Cu surface. It has been observed that the uniformity, shape and size of the nanowires could be conveniently controlled by etching time and etchant concentration. We have also prepared piezoelectric nanogenerator based on the flexible PVDF/CuO composite film, where the traditional electrical poling treatment was avoided. In addition, dielectric properties have been studied to demonstrate the role of interfacial polarization.}, language = {en} } @inproceedings{KotNaumannGarainetal., author = {Kot, Małgorzata and Naumann, Franziska and Garain, Samiran and Po{\'{z}}arowska, Emilia and Gargouri, Hassan and Henkel, Karsten and Schmeißer, Dieter}, title = {Aluminum nitride films prepared by plasma atomic layer deposition using different plasma sources}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 53,3}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Band 53,3}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 170}, abstract = {Aluminum nitride (AlN) thin films are promising for versatile applications in optoelectronics, electronics, piezoelectrics, and acoustics due to their remarkable properties such as wide band gap, high dielectric constant, low electrical conductivity, good piezoelectric coefficient and high ultrasonic velocity. We present a comparative study of AlN films grown by plasma-enhanced atomic layer deposition at 350°C silicon wafers in the SENTECH SI ALD LL system using TMA and NH3 where either a capacitively coupled plasma (CCP) or a direct PTSA (planar triple spiral antenna) source was applied. The films were characterized by ellipsometry, XPS and electrical measurements. The layer properties are discussed concerning the varied ALD process parameters. In general, the process using the direct PTSA source delivered films with higher refractive index and better homogeneity over the wafer achieving also higher growth rates per cycle (GPC) in reduced total cycle durations. Films with refractive index in the range of 2.05 and permittivity around 8 could be realized with a GPC of 1.54 {\AA}/cycle.}, language = {en} } @incollection{SchmeisserKotCorreaetal., author = {Schmeißer, Dieter and Kot, Małgorzata and Corr{\^e}a, Silma Alberton and Das, Chittaranjan and Henkel, Karsten}, title = {Interface Potentials, Intrinsic Defects, and Passivation Mechanisms in Al₂O₃, HfO₂, and TiO₂ Ultrathin Films}, series = {Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, vol. 3.1}, booktitle = {Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, vol. 3.1}, editor = {Wandelt, Klaus}, publisher = {Elsevier}, address = {Oxford}, isbn = {978-0-12-809739-7}, doi = {10.1016/B978-0-12-409547-2.14119-8}, pages = {162 -- 171}, abstract = {We study the electronic structure of ultrathin Al₂O₃, HfO₂, and TiO₂ ALD films by resonant photoelectron spectroscopy. We identify intrinsic defects which are responsible for the active sites in interface reactions, for the incorporation of intrinsic charges, and for the formation of local dipole momenta. All of these features determine the surface potentials and the reactivity of the surface of the atomic layer deposition coated systems. We give examples of charges and dipoles in Al₂O₃, on a study of the surface potentials in HfO₂, and relate the intrinsic defects in TiO₂ to their electrochemical relevance.}, language = {en} }