@misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{WenShaikhSteueretal., author = {Wen, Shuyu and Shaikh, Mohd Saif and Steuer, Oliver and Prucnal, Slawomir and Grenzer, J{\"o}rg and H{\"u}bner, Ren{\´e} and Turek, Marcin and Pyszniak, Krzysztof and Reiter, Sebastian and Fischer, Inga Anita and Georgiev, Yordan M. and Helm, Manfred and Wu, Shaoteng and Luo, Jun-Wei and Zhou, Shengqiang and Berenc{\´e}n, Yonder}, title = {Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques}, series = {Applied Physics Letters}, volume = {123}, journal = {Applied Physics Letters}, number = {8}, issn = {0003-6951}, doi = {10.1063/5.0166799}, pages = {1 -- 7}, abstract = {GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5\% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.}, language = {en} }