@inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{RudolphSchniederHeinrichetal., author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang and Schnieder, Frank}, title = {Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang and Meliani, Chafik}, title = {A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology}, language = {en} } @inproceedings{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @inproceedings{LenkKlockenhoffMaassdorfetal., author = {Lenk, Friedrich and Klockenhoff, Harald and Maaßdorf, Andre and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {A 3.2 W coplanar single-device X-band amplifier with GaAs HBT}, series = {Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005}, booktitle = {Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005}, publisher = {Horizon House Publ.}, address = {London}, isbn = {88-902012-0-7}, pages = {49 -- 52}, abstract = {High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47\% PAE is achieved.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Low phase-noise GaAs-HBT monolithic W-band oscillator}, series = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, booktitle = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, publisher = {London}, address = {Horizon House Publ.}, isbn = {1-58053-992-0}, pages = {897 -- 900}, language = {en} } @inproceedings{HilsenbeckLenkHeinrichetal., author = {Hilsenbeck, Jochen and Lenk, Friedrich and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology}, series = {Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003}, booktitle = {Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7833-4}, doi = {10.1109/GAAS.2003.1252399}, pages = {223 -- 226}, abstract = {We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.}, language = {en} } @inproceedings{LenkSchottHeinrich, author = {Lenk, Friedrich and Schott, Matthias and Heinrich, Wolfgang}, title = {Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators}, series = {31st European Microwave Conference, 2001, 24 - 26 Sept. 2001}, booktitle = {31st European Microwave Conference, 2001, 24 - 26 Sept. 2001}, publisher = {Microwave Engineering Europe}, address = {London}, doi = {10.1109/EUMA.2001.339168}, pages = {1 -- 4}, abstract = {Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed.}, language = {en} } @inproceedings{KuhnertLenkHilsenbecketal., author = {Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, doi = {10.1109/MWSYM.2001.967198}, pages = {1551 -- 1554}, abstract = {Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.}, language = {en} } @inproceedings{SchottKuhnertLenketal., author = {Schott, Matthias and Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {38 GHz push-push GaAs-HBT MMIC oscillator}, series = {2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, vol. 2}, booktitle = {2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, doi = {10.1109/MWSYM.2002.1011761}, pages = {839 -- 842}, abstract = {Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz}, series = {2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2}, booktitle = {2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7695-1}, doi = {10.1109/MWSYM.2003.1212515}, pages = {903 -- 906}, abstract = {Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Optimizing MMIC reflection-type oscillators}, series = {2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3}, booktitle = {2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-8331-1}, doi = {10.1109/MWSYM.2004.1338816}, pages = {1341 -- 1344}, abstract = {In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated.}, language = {en} } @inproceedings{SchmueckleLenkHutteretal., author = {Schm{\"u}ckle, Franz-Josef and Lenk, Friedrich and Hutter, Matthias and Klein, Matthias and Oppermann, Hermann and Engelmann, Gunter and T{\"o}pper, Michael and Riepe, Klaus J. and Heinrich, Wolfgang}, title = {W-band flip-chip VCO in thin-film environment}, series = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, booktitle = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8845-3}, doi = {10.1109/MWSYM.2005.1516837}, abstract = {A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme.}, language = {en} }