@inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang and Meliani, Chafik}, title = {A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Low phase-noise GaAs-HBT monolithic W-band oscillator}, series = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, booktitle = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, publisher = {London}, address = {Horizon House Publ.}, isbn = {1-58053-992-0}, pages = {897 -- 900}, language = {en} } @inproceedings{HilsenbeckLenkHeinrichetal., author = {Hilsenbeck, Jochen and Lenk, Friedrich and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology}, series = {Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003}, booktitle = {Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7833-4}, doi = {10.1109/GAAS.2003.1252399}, pages = {223 -- 226}, abstract = {We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.}, language = {en} } @inproceedings{KuhnertLenkHilsenbecketal., author = {Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, doi = {10.1109/MWSYM.2001.967198}, pages = {1551 -- 1554}, abstract = {Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.}, language = {en} } @inproceedings{SchottKuhnertLenketal., author = {Schott, Matthias and Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {38 GHz push-push GaAs-HBT MMIC oscillator}, series = {2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, vol. 2}, booktitle = {2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, doi = {10.1109/MWSYM.2002.1011761}, pages = {839 -- 842}, abstract = {Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz}, series = {2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2}, booktitle = {2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7695-1}, doi = {10.1109/MWSYM.2003.1212515}, pages = {903 -- 906}, abstract = {Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Optimizing MMIC reflection-type oscillators}, series = {2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3}, booktitle = {2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-8331-1}, doi = {10.1109/MWSYM.2004.1338816}, pages = {1341 -- 1344}, abstract = {In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated.}, language = {en} } @misc{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A new design approach for low phase-noise reflection-type MMIC oscillators}, series = {IEEE transactions on microwave theory and techniques}, volume = {52}, journal = {IEEE transactions on microwave theory and techniques}, number = {12}, issn = {0018-9480}, doi = {10.1109/TMTT.2004.837319}, pages = {2725 -- 2731}, abstract = {In this paper, optimization of the loaded quality factor QL for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded QL values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range.}, language = {en} }