@inproceedings{RudolphAndreiLieroetal., author = {Rudolph, Matthias and Andrei, Cristina and Liero, Armin and Lossy, Richard and Heinrich, Wolfgang}, title = {Highly Linear Broadband GaN-based Low-noise Amplifier}, language = {en} } @inproceedings{RudolphFluckeSchniederetal., author = {Rudolph, Matthias and Flucke, Jens and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {On the magnetic coupling between bondwires in power-transistor packages}, language = {en} } @inproceedings{RudolphHeinrich, author = {Rudolph, Matthias and Heinrich, Wolfgang}, title = {Assessment of power-transistor package models: distributed versus lumped approach}, language = {en} } @article{RudolphRheinfelderBeisswangeretal., author = {Rudolph, Matthias and Rheinfelder, C. N. and Beißwanger, F. and Heinrich, Wolfgang}, title = {Nonlinear Modeling of SiGe HBTs up to 50 GHz}, language = {en} } @article{RudolphSchniederHeinrich, author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang}, title = {Modeling Emitter Breakdown in GaAs-Based HBTs}, language = {en} } @misc{RudolphLenkLlopisetal., author = {Rudolph, Matthias and Lenk, Friedrich and Llopis, O. and Heinrich, Wolfgang}, title = {On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs}, series = {IEEE transactions on microwave theory and techniques}, volume = {54}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, pages = {2954 -- 2961}, language = {en} } @article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} } @article{RudolphKorndoerferHeymannetal., author = {Rudolph, Matthias and Kornd{\"o}rfer, Falk and Heymann, Peter and Heinrich, Wolfgang}, title = {Compact Large-Signal Shot-Noise Model for HBTs}, language = {en} } @article{RudolphMelianiDoerneretal., author = {Rudolph, Matthias and Meliani, Chafik and D{\"o}rner, Ralf and Heinrich, Wolfgang}, title = {Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio}, language = {en} } @article{RudolphKhalilLieroetal., author = {Rudolph, Matthias and Khalil, I. and Liero, Armin and Lossy, Richard and Heinrich, Wolfgang}, title = {GaN HEMT Potential for Low Noise Highly Linear RF Applications}, language = {en} } @misc{RudolphChaturvediHircheetal., author = {Rudolph, Matthias and Chaturvedi, Nidhi and Hirche, Klaus and Wurfl, K. and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Rugged 30 GHz GaN Low-Noise Amplifiers}, language = {en} } @article{RudolphTischlerKilketal., author = {Rudolph, Matthias and Tischler, Th. and Kilk, A. and Heinrich, Wolfgang}, title = {Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules}, language = {en} } @article{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study}, language = {en} } @article{RudolphBehtashHircheetal., author = {Rudolph, Matthias and Behtash, Reza and Hirche, Klaus and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier}, language = {en} } @misc{RudolphMelianiKurpasetal., author = {Rudolph, Matthias and Meliani, Chafik and Kurpas, Paul and Schmidt, L. and Rheinfelder, C. N. and Heinrich, Wolfgang}, title = {A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65\% PAE}, language = {en} } @misc{RudolphDewitzLieroetal., author = {Rudolph, Matthias and Dewitz, Mike and Liero, Armin and Khalil, I. and Chaturvedi, Nidhi and Wipf, Christian and Bertenburg, R. M. and Miller, J. and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Robust X-Band LNA with Extremely Short Recovery Time}, language = {en} } @inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{RudolphSchniederHeinrichetal., author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang and Schnieder, Frank}, title = {Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang and Meliani, Chafik}, title = {A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology}, language = {en} } @inproceedings{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @inproceedings{LenkKlockenhoffMaassdorfetal., author = {Lenk, Friedrich and Klockenhoff, Harald and Maaßdorf, Andre and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {A 3.2 W coplanar single-device X-band amplifier with GaAs HBT}, series = {Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005}, booktitle = {Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005}, publisher = {Horizon House Publ.}, address = {London}, isbn = {88-902012-0-7}, pages = {49 -- 52}, abstract = {High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47\% PAE is achieved.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Low phase-noise GaAs-HBT monolithic W-band oscillator}, series = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, booktitle = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, publisher = {London}, address = {Horizon House Publ.}, isbn = {1-58053-992-0}, pages = {897 -- 900}, language = {en} } @inproceedings{HilsenbeckLenkHeinrichetal., author = {Hilsenbeck, Jochen and Lenk, Friedrich and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology}, series = {Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003}, booktitle = {Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7833-4}, doi = {10.1109/GAAS.2003.1252399}, pages = {223 -- 226}, abstract = {We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.}, language = {en} } @inproceedings{LenkSchottHeinrich, author = {Lenk, Friedrich and Schott, Matthias and Heinrich, Wolfgang}, title = {Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators}, series = {31st European Microwave Conference, 2001, 24 - 26 Sept. 2001}, booktitle = {31st European Microwave Conference, 2001, 24 - 26 Sept. 2001}, publisher = {Microwave Engineering Europe}, address = {London}, doi = {10.1109/EUMA.2001.339168}, pages = {1 -- 4}, abstract = {Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed.}, language = {en} } @inproceedings{KuhnertLenkHilsenbecketal., author = {Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, doi = {10.1109/MWSYM.2001.967198}, pages = {1551 -- 1554}, abstract = {Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.}, language = {en} } @inproceedings{SchottKuhnertLenketal., author = {Schott, Matthias and Kuhnert, Holger and Lenk, Friedrich and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {38 GHz push-push GaAs-HBT MMIC oscillator}, series = {2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, vol. 2}, booktitle = {2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, doi = {10.1109/MWSYM.2002.1011761}, pages = {839 -- 842}, abstract = {Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz}, series = {2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2}, booktitle = {2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7695-1}, doi = {10.1109/MWSYM.2003.1212515}, pages = {903 -- 906}, abstract = {Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Optimizing MMIC reflection-type oscillators}, series = {2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3}, booktitle = {2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-8331-1}, doi = {10.1109/MWSYM.2004.1338816}, pages = {1341 -- 1344}, abstract = {In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated.}, language = {en} } @inproceedings{SchmueckleLenkHutteretal., author = {Schm{\"u}ckle, Franz-Josef and Lenk, Friedrich and Hutter, Matthias and Klein, Matthias and Oppermann, Hermann and Engelmann, Gunter and T{\"o}pper, Michael and Riepe, Klaus J. and Heinrich, Wolfgang}, title = {W-band flip-chip VCO in thin-film environment}, series = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, booktitle = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8845-3}, doi = {10.1109/MWSYM.2005.1516837}, abstract = {A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme.}, language = {en} } @inproceedings{SchottLenkMelianietal., author = {Schott, Matthias and Lenk, Friedrich and Meliani, Chafik and Heinrich, Wolfgang}, title = {Low phase noise X-band push-push oscillator with frequency divider}, series = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, booktitle = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8845-3}, doi = {10.1109/MWSYM.2005.1516986}, abstract = {A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4\%.}, language = {en} } @inproceedings{MelianiLenkHeinrich, author = {Meliani, Chafik and Lenk, Friedrich and Heinrich, Wolfgang}, title = {24 GHz Low Power VCOs and Analog Frequency Dividers}, series = {IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA}, booktitle = {IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-9541-7}, doi = {10.1109/MWSYM.2006.249744}, pages = {1801 -- 1804}, abstract = {24 GHz VCOs and frequency dividers with very low power consumption are presented. The circuits are realized as GaAs HBT MMICs. They comprise a VCO with high efficiency >17\% and 12\% tuning range at only 18 mW DC consumption as well as several frequency dividers. In order to minimize power consumption, the latter use the injection-locked frequency-divider (ILFD) concept. Divider ratios of 2 and 4 are realized, power consumption as low as 25 mW for a divider-by-2 is achieved. This demonstrates the capabilities of the analog concept in realizing dividers for mm-wave frequencies at DC consumption levels far below their digital counterparts}, language = {en} } @misc{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A new design approach for low phase-noise reflection-type MMIC oscillators}, series = {IEEE transactions on microwave theory and techniques}, volume = {52}, journal = {IEEE transactions on microwave theory and techniques}, number = {12}, issn = {0018-9480}, doi = {10.1109/TMTT.2004.837319}, pages = {2725 -- 2731}, abstract = {In this paper, optimization of the loaded quality factor QL for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded QL values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range.}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, journal = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-032-3}, pages = {280 -- 283}, language = {en} } @misc{SchniederBengtssonSchmueckleetal., author = {Schnieder, Frank and Bengtsson, Olof and Schm{\"u}ckle, Franz-Josef and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description}, series = {IEEE transactions on microwave theory and techniques}, volume = {61}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2261089}, pages = {2603 -- 2609}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Small- and large-signal modeling of InP HBTs in transferred-substrate technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {6}, journal = {International Journal of Microwave and Wireless Technologies}, number = {3-4}, doi = {10.1017/S1759078714000051}, pages = {243 -- 251}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive}, series = {Proceedings of 45th European Microwave Conference, Paris 2015}, booktitle = {Proceedings of 45th European Microwave Conference, Paris 2015}, publisher = {IEEE}, doi = {10.1109/EuMC.2015.7345742}, pages = {231 -- 234}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1135}, pages = {1010 -- 1012}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Thin ice: Diamond films could more than double the power output achievable with transistors in the 'Terahertz gap' by improving thermal management}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1943}, pages = {S. 959}, language = {en} } @misc{NosaevaAlSawafJohnetal., author = {Nosaeva, Ksenia and Al-Sawaf, Thualfiqa and John, Wilfred and Stoppel, Dimitri and Rudolph, Matthias and Schm{\"u}ckle, Franz-Josef and Janke, Bernd and Kr{\"u}ger, Olaf and Krozer, Viktor and Heinrich, Wolfgang and Weimann, Nils}, title = {Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer}, series = {IEEE Transactions on Electron Devices}, volume = {63}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2016.2533669}, pages = {1846 -- 1852}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} } @misc{ShivanKauleHossainetal., author = {Shivan, T. and Kaule, Evelyne and Hossain, M. and D{\"o}rner, Ralf and Johansen, Tom K. and Stoppel, Dimitri and Boppel, S. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias}, title = {Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {7}, issn = {1759-0795}, doi = {10.1017/S1759078719000515}, pages = {635 -- 644}, language = {en} } @misc{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Vadal{\`a}, Valeria and Raffo, Antonio and Heinrich, Wolfgang and Rudolph, Matthias}, title = {A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {2}, issn = {1759-0787}, doi = {10.1017/S1759078719000060}, pages = {121 -- 129}, language = {en} } @misc{ErkelenzSriperumbuduriFlisgenetal., author = {Erkelenz, Kevin and Sriperumbuduri, Venkata Pawan and Flisgen, Thomas and Rudolph, Matthias and Johansen, Tom K. and Heinrich, Wolfgang and Wentzel, Andreas}, title = {Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, isbn = {978-3-9820-3971-8}, pages = {268 -- 271}, language = {en} } @misc{KrauseBeleniotisBengtssonetal., author = {Krause, Sascha and Beleniotis, Petros and Bengtsson, Olof and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive}, series = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, journal = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, isbn = {978-1-6654-0307-8}, issn = {2576-7216}, doi = {10.1109/IMS19712.2021.9574839}, pages = {515 -- 518}, language = {en} } @misc{KrauseMichlerKoelpinetal., author = {Krause, Sascha and Michler, Fabian and K{\"o}lpin, Alexander and Rudolph, Matthias and Heinrich, Wolfgang}, title = {A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars}, series = {IEEE Microwave and Wireless Components Letters}, volume = {31}, journal = {IEEE Microwave and Wireless Components Letters}, number = {8}, issn = {1558-1764}, doi = {10.1109/LMWC.2021.3084338}, pages = {997 -- 1000}, language = {en} } @misc{ShresthaDoernerYacoubetal., author = {Shrestha, Amit and D{\"o}rner, Ralf and Yacoub, Hady and Johansen, Tom K. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias and Wentzel, Andreas}, title = {A 100 GHz Class-F-Like InP-DHBT PA with 25,4\%PAE}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783638}, pages = {225 -- 228}, language = {en} } @misc{KrauseZervosBeleniotisetal., author = {Krause, Sascha and Zervos, Christos and Beleniotis, Petros and Ritter, Dan and Rudolph, Matthias and Heinrich, Wolfgang}, title = {On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs}, series = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, journal = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-6654-9613-1}, doi = {10.1109/IMS37962.2022.9865474}, pages = {914 -- 917}, language = {en} } @misc{YazdaniBeleniotisBrunneretal., author = {Yazdani, Hossein and Beleniotis, Petros and Brunner, Frank and Ostermay, Ina and W{\"u}rfl, Joachim and Rudolph, Matthias and Heinrich, Wolfgang and Hilt, Oliver}, title = {K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance}, series = {Physica Status Solidi}, journal = {Physica Status Solidi}, doi = {10.1002/pssa.202400592}, pages = {8}, language = {en} } @misc{TiwariFlisgenHeinrichetal., author = {Tiwari, Krishan Kumar and Flisgen, Thomas and Heinrich, Wolfgang and Caire, Giuseppe}, title = {Array-fed RIS : validation of Friis-based modeling using full-wave simulations}, series = {Proceedings of the 2025 16th German Microwave Conference (GeMiC), March 17-19, 2025, Dresden, Germany}, journal = {Proceedings of the 2025 16th German Microwave Conference (GeMiC), March 17-19, 2025, Dresden, Germany}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, address = {New York, NY}, isbn = {978-3-9820397-4-9}, doi = {10.23919/GeMiC64734.2025.10979163}, pages = {611 -- 614}, abstract = {Space-fed large antenna arrays offer superior efficiency, simplicity, and reductions in size, weight, power, and cost (SWaP-C) compared to constrained-feed systems. Historically, horn antennas have been used for space feeding, but they suffer from limitations such as bulky designs, low aperture efficiency (≈ 50\%), and restricted degrees of freedom at the continuous aperture. In contrast, planar patch arrays achieve significantly higher aperture efficiency (> 90\%) due to their more uniform aperture distribution, reduced weight, and increased degrees of freedom from the discretized aperture. Building on these advantages, we proposed an array-fed Reflective Intelligent Surface (RIS) system, where an active multi-antenna feeder (AMAF) optimizes power transfer by aligning with the principal eigenmode of the AMAF-RIS propagation matrix T. While our previous studies relied on the Friis transmission formula for system modeling, we now validate this approach through full-wave simulations in CST Microwave Studio®. By comparing the Friis-based matrix, TFriis, with the full-wave solution, Tfull.wave, we validate the relevance of the Friis-based modeling for top-level system design. Our findings confirm the feasibility of the proposed AMAF-RIS architecture for next generation communication systems.}, language = {en} } @misc{DischkeNozinicHellmichetal., author = {Dischke, Eugen and Nozinic, Sonja and Hellmich, Daniel Georg and Flisgen, Thomas and R{\"a}mer, Adam and Heinrich, Wolfgang and Krozer, Viktor}, title = {Band-pass filter based on stacked metal plates in V-band waveguide technology}, series = {Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 15-20 June 2025, San Francisco, CA, USA}, journal = {Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 15-20 June 2025, San Francisco, CA, USA}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, address = {New York, NY}, isbn = {979-8-3315-1409-9}, issn = {2576-7216}, doi = {10.1109/IMS40360.2025.11103935}, pages = {427 -- 430}, abstract = {Waveguide filters ideally require resonance chambers, whose shape is defined by sharp corners. As this is difficult to obtain by classical means of production, a cost-effective rectangular band-pass filter (BPF) based on multilayer waveguide (MLW) technology for V-band is proposed in this paper. The conveniently compact design of the filter is then supplied into a streamlined and automated procedure to transfer the design into production data. This in turn eliminates man made errors in production and leaves room for scalability.}, language = {en} } @misc{HeinkenBlumroederAdhikarietal., author = {Heinken, Thilo and Blumr{\"o}der, Jeanette S. and Adhikari, Yojana and Balthasar, Cathrina and Binder, Anja and Birkhofer, Klaus and Bischoff, Antje and Brosinsky, Arlena and Bubner, Ben and Clerc, Danica and Djoudi, El Aziz and Dobkowitz, Sophia and Francke, Till and Gerwin, Werner and Hartong, Heinrich and Hess, Carsten and Jarling, Ren{\´e} and Jouy, Florent and Leinen, Loretta and Meißner, Andreas and Raab, Thomas and Repmann, Frank and R{\"o}nnefarth, Susanne and Schaaf, Wolfgang and Schirrmacher, Marina and Schmehl, Marie-Therese and Schmitt, Thomas and Schr{\"o}der, Jens and Sch{\"u}le, Maren and Sturm, Knut and Welle, Torsten and Ibisch, Pierre L.}, title = {PYROPHOB - A post-fire ecosystem research project to inform management for resilient forest development}, series = {Tuexenia}, volume = {44}, journal = {Tuexenia}, issn = {0722-494X}, doi = {10.14471/2024.44.004}, pages = {35}, abstract = {PYROPHOB (fire-resistant) is the name of an interdisciplinary research project that is running for five years from 2020 to 2025. In this project, eight institutions are investigating the ecological effects of wildfires and subsequent forest management strategies in pine forests (plantations) in Brandenburg (NE Germany), with the aim of formulating practical recommendations for managing fire-prone forests and the effective restoration of post-fire forest areas. We provide a brief overview of what is known about the effects of wildfire on abiotic and biotic parameters in temperate pine forests, as well as the effects of silvicultural treatments. To date, we know little about how different components of biodiversity are linked in post-fire forest ecosystems and how management affects their functioning. By describing the project, we illustrate the requirements for the implementation of such an applied research project. We emphasize the importance of the study design for dealing with interdisciplinary questions and for the quantitative synthesis of research results. The project comprises a set of standardised field plots in two wildfire areas covering different post-fire management options. Fifteen study sites were established, including two reference sites in unburned pine stands, each with ten study plots as replicates. In situ nitrogen mineralisation, litter decomposition tests and soil biological activity are used for soil biological characterisation. Microclimate data is measured continuously. Standing and lying dead wood and tree regeneration are recorded as key indicators of the success of forestry treatments. Further methods com-prise terrestrial laser scanning, remote sensing techniques as well as surveys of vegetation and above and below ground biomass. Identification of fruiting body-forming fungi, phytoparasites and ectomycorrhizal fungi is supported by marker gene sequencing. Faunistic indicators comprise predatory soil arthropods (pairs of emergence tents and soil traps), saproxylic beetles (flight traps and funnel traps), moths (automated window traps), mammals (camera traps), and breeding birds (visual and acoustic observation). We discuss the strengths and limitations of the project design. We are able to systematically capture short-term temporal shifts in parameters and trends in post-fire ecosystem development. Research in a real landscape with ongoing environmental changes and interventions pres-ents challenges for experimental design, data analysis and interpretation. The drivers of ecosystem development are rarely completely independent or perfectly balanced, and lack of replication is ine-vitable. The two fires did not occur in the same year and season, resulting in different initial conditions for the colonisation of the burned areas. Finally, a large part of one study area was again affected by a fire in 2022, which destroyed direct comparability with the other sites. Despite these obstacles the project has started to generate valuable results to address management and conservation challenges.}, language = {en} } @misc{KanitkarDoernerJohansenetal., author = {Kanitkar, Abhijeet Kanitkar and Doerner, Ralf Doerner and Johansen, Tom Keinicke and Heinrich, Wolfgang and Flisgen, Thomas}, title = {On-wafer 16-term calibration for characterization of InP HBTs featuring sub-THz fmax}, series = {2025 55 th European Microwave Conference Proceedings}, journal = {2025 55 th European Microwave Conference Proceedings}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-081-1}, doi = {10.23919/EuMC65286.2025.11235132}, pages = {687 -- 690}, abstract = {In this paper, InP HBTs featuring maximum oscillation frequencies fmax in the sub-THz range are characterized by conducting on-wafer 16 -term calibration. A direct comparison between 8 -term calibration and 16 -term calibration demonstrates that the 16 -term calibration improves the way transistor Mason's gain is derived. The on-wafer measurements of transistors with emitter widths of 0.5μm and 0.85μm yield extracted fmax values of 0.44 THz and 0.33 THz, respectively. The study shows that choosing proper on-wafer calibration techniques is highly important for reliable transistor characterization.}, language = {en} }