@misc{HansenWelsFroeschkeetal., author = {Hansen, Felix and Wels, Martin and Froeschke, Samuel and Popov, Alexey and Wolf, Daniel and B{\"u}chner, Bernd and Schmidt, Peer and Hampel, Silke}, title = {Thermodynamic Evaluation and Chemical Vapor Transport of Few-Layer WTe2}, series = {Crystal Growth and Design}, volume = {20}, journal = {Crystal Growth and Design}, number = {11}, issn = {1528-7505}, doi = {10.1021/acs.cgd.0c01004}, pages = {7341 -- 7349}, abstract = {Tungsten telluride WTe2 is the sole candidate of a group of two-dimensional layered transition metal dichalcogenides (TMDCs) MX2 with a thermodynamically stable 1T′-structure at room temperature. The binary system W/Te was audited with respect to a rational approach of planning and realization of a bottom-up synthesis of WTe2 nanostructures. Thus, the parameters of the synthesis via chemical vapor transports (CVT) were derived by thermodynamic simulations of the reaction pathway according to the Calphad method. Reflecting on the peritectic melting behavior at 1020 °C, the values of ΔfHm° (298 K) = -26.5 kJ·mol-1 and Sm° (298 K) = 132 J·mol-1 ·K-1 have been obtained. According to modeling, crystal growth by short time vapor transport is reasonable under the addition of bromine or TeBr4 in the temperature range between 650 and 750 °C. Experimental implementation of crystal growth of WTe2 nanosheets succeeded in a temperature gradient from 725 to 675 °C on yttria-stabilized zirconia (YSZ) (111) substrates, observing the deposition of single crystal sheets of high crystallinity with thicknesses of 15-20 nm (∼20-30 layers). The high crystallinity, pristine morphology, and overall quality of the deposited nanosheets is shown by means of atomic resolution transmission electron microscopy, selected area electron diffraction (SAED), and atomic force microscopy as well as profound double-polarized Raman spectroscopy.}, language = {en} } @misc{HansenFuckeCharvinetal., author = {Hansen, Felix and Fucke, Rico and Charvin, Titouan and Froeschke, Samuel and Wolf, Daniel and Giraud, Romain and Dufouleur, Joseph and Gr{\"a}ßler, Nico and B{\"u}chner, Bernd and Schmidt, Peer and Hampel, Silke}, title = {Direct Deposition of (BixSb1-x)2Te3 Nanosheets on Si/SiO2 Substrates by Chemical Vapor Transport}, series = {Crystal growth \& design}, volume = {22}, journal = {Crystal growth \& design}, number = {4}, issn = {1528-7505}, doi = {10.1021/acs.cgd.1c01446}, pages = {2354 -- 2363}, abstract = {The tellurides of bismuth and antimony (Bi2Te3 and Sb2Te3) are prominent members of the V2VI3 material family that exhibit promising topological properties. We provide a method for the rational synthesis of mixed crystals of these materials ((BixSb1-x)2Te3 with x = 0.1, ..., 0.9) by means of a bottom-up chemical vapor transport (CVT) approach. Thermodynamic calculations showed the synthesis to be possible in the temperature range of 390-560 °C without significant enrichment of either component and without adding a transport agent. The starting materials were synthesized and verified by X-ray diffraction (XRD). Optimization experiments showed the ideal conditions for nanosheet synthesis to be T2 = 560 °C, T1 = 390 °C with a reaction time of t = 36 h. Crystals with heights of down to 12 nm (12 quintuple layers) were synthesized and analyzed by means of scanning electron microscopy, energy-dispersive X-ray spectrometry, and atomic force microscopy. High-resolution transmission electron microscopy confirmed the R3̅m crystal structure, high crystallinity, and overall quality of the synthesized (BixSb1-x)2Te3 nanosheets. Magnetotransport measurements revealed that such ternary compounds can have a significantly reduced carrier density compared to the binary parent compounds.}, language = {en} }