@misc{LewerenzAggourMurrelletal., author = {Lewerenz, Hans-Joachim and Aggour, Mohammed and Murrell, Chris and Kanis, M. and Hoffmann, Patrick and Jungblut, H. and Schmeißer, Dieter}, title = {Interface engineering of photoelectrochemically prepared Si surfaces}, abstract = {The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.}, language = {en} }