@misc{GorgoiGerlachWilksetal., author = {Gorgoi, Mihaela and Gerlach, Dominic and Wilks, Regan G. and Wippler, David and Wimmer, Manuel and Lozac'h, Micka{\"e}l and Duarte, Roberto Felix and M{\"u}ck, Leonie Anna and Meier, M. and Ueda, Shigenori and Yoshikawa, Hideki and Lips, Klaus and Rech, Bernd and Sumiya, Masatomo and H{\"u}pkes, J{\"u}rgen and Kobayashi, Kaoru and B{\"a}r, Marcus}, title = {The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact}, series = {Applied Physics Letters}, volume = {103}, journal = {Applied Physics Letters}, number = {2}, issn = {1077-3118}, pages = {023903}, abstract = {The electronic structure of the interface between the boron-doped oxygenated amorphous silicon "window layer" (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 ± 0.27) eV and (-3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.}, language = {en} } @incollection{SchwarzPfeifferErbringetal., author = {Schwarz, Harald and Pfeiffer, Klaus and Erbring, H.-P. and Zeidler, Jens and Dorendorf, Stefan}, title = {Anforderungen an zukunftsf{\"a}hige Netze}, language = {de} }