@misc{GerlachWipplerWilksetal., author = {Gerlach, Dominic and Wippler, David and Wilks, Regan G. and Wimmer, Manuel and Lozac'h, Micka{\"e}l and Duarte, Roberto Felix and Ueda, Shigenori and Yoshikawa, Hideki and Lips, Klaus and Rech, Bernd and Sumiya, Masatomo and Kobayashi, Kaoru and Gorgoi, Mihaela and H{\"u}pkes, J{\"u}rgen and B{\"a}r, Marcus}, title = {p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study}, series = {IEEE journal of photovoltaics}, volume = {3}, journal = {IEEE journal of photovoltaics}, number = {1}, issn = {2156-3381}, pages = {483 -- 487}, abstract = {The chemical and electronic properties of a- Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.}, language = {en} } @misc{GorgoiGerlachWilksetal., author = {Gorgoi, Mihaela and Gerlach, Dominic and Wilks, Regan G. and Wippler, David and Wimmer, Manuel and Lozac'h, Micka{\"e}l and Duarte, Roberto Felix and M{\"u}ck, Leonie Anna and Meier, M. and Ueda, Shigenori and Yoshikawa, Hideki and Lips, Klaus and Rech, Bernd and Sumiya, Masatomo and H{\"u}pkes, J{\"u}rgen and Kobayashi, Kaoru and B{\"a}r, Marcus}, title = {The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact}, series = {Applied Physics Letters}, volume = {103}, journal = {Applied Physics Letters}, number = {2}, issn = {1077-3118}, pages = {023903}, abstract = {The electronic structure of the interface between the boron-doped oxygenated amorphous silicon "window layer" (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 ± 0.27) eV and (-3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.}, language = {en} }