@misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{GibsonDonkoAlelyanietal., author = {Gibson, Andrew R. and Donk{\´o}, Zolt{\´a}n and Alelyani, Layla and Bischoff, Lena and H{\"u}bner, Gerrit and Bredin, J{\´e}r{\^o}me and Doyle, Scott and Korolov, Ihor and Niemi, Kari and Mussenbrock, Thomas and Hartmann, Peter and Dedrick, James P. and Schulze, Julian and Gans, Timo and O'Connell, Deborah}, title = {Disrupting the spatio-temporal symmetry of the electron dynamics in atmospheric pressure plasmas by voltage waveform tailoring}, series = {Plasma Sources Science and Technology}, volume = {28}, journal = {Plasma Sources Science and Technology}, number = {1}, issn = {1361-6595}, doi = {10.1088/1361-6595/aaf535}, pages = {7}, language = {en} } @misc{BielefeldtBasenerKhanetal., author = {Bielefeldt, Jens and Basener, Kai-Uwe and Khan, Siddique R. and Massah, Mozhdeh and Wiesbrock, Hans-Werner and Scharoba, Stefan and H{\"u}bner, Michael}, title = {DeepTest: How Machine Learning Can Improve the Test of Embedded Systems }, series = {10th Mediterranean Conference on Embedded Computing (MECO), 7-10 June 2021}, journal = {10th Mediterranean Conference on Embedded Computing (MECO), 7-10 June 2021}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-6654-3912-1}, doi = {10.1109/meco52532.2021.9460182}, pages = {1 -- 6}, language = {en} } @misc{BielefeldtBasenerKhanetal., author = {Bielefeldt, Jens and Basener, Kai-Uwe and Khan, Siddique R. and Massah, Mozhdeh and Wiesbrock, Hans-Werner and Scharoba, Stefan and H{\"u}bner, Michael}, title = {Einsatz von Deep Learning f{\"u}r den Test Eingebetteter Systeme }, series = {Informatik 2021: computer science \& sustainability, 27. September-01. Oktober 2021, Berlin}, journal = {Informatik 2021: computer science \& sustainability, 27. September-01. Oktober 2021, Berlin}, publisher = {Gesellschaft f{\"u}r Informatik e.V.}, address = {Bonn}, isbn = {978-3-88579-708-1}, doi = {10.18420/INFORMATIK2021-166}, language = {de} } @misc{SteuerLiedkeButterlingetal., author = {Steuer, O. and Liedke, Maciej O. and Butterling, M. and Schwarz, D. and Schulze, J. and Li, Z. and Wagner, A. and Fischer, Inga Anita and H{\"u}bner, R. and Zhou, S.}, title = {Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy}, series = {Journal of Physics: Condensed Matter}, volume = {36}, journal = {Journal of Physics: Condensed Matter}, number = {8}, issn = {0953-8984}, doi = {10.1088/1361-648X/ad0a10}, pages = {1 -- 11}, abstract = {Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening - variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.}, language = {en} }