@article{GrassTittelbachHelmrichJagdholdetal., author = {Grass, Eckhard and Tittelbach-Helmrich, Klaus and Jagdhold, Ulrich and Troya Chinchilla, Alfonso Luis and Lippert, Gunther and Kr{\"u}ger, Olaf and Lehmann, Jens and Maharatna, Koushik and Dombrowski, Kai F. and Fiebig, Norbert and Kraemer, Rolf and M{\"a}h{\"o}nen, Petri}, title = {On The Single-Chip Implementation of a Hiperlan/2 and IEEE 802.11a Capable Modem}, language = {en} } @article{SohalLupinaLippertetal., author = {Sohal, Rakesh and Lupina, Grzegorz and Lippert, Gunther and Wenger, Christian and Seifarth, Olaf and Schr{\"o}der, Thomas and Tallarida, Massimo and Schmeißer, Dieter}, title = {Interface chemistry of high-k PrxAl2-xO3 (x=2-0) dielectrics on TiN for dynamic random access memory applications}, language = {en} } @inproceedings{LippertDabrowskiCostinaetal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @inproceedings{DudekLupinaKozłowskietal., author = {Dudek, Peter and Lupina, Grzegorz and Kozłowski, Grzegorz and Dabrowski, Jarek Marek and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schmeißer, Dieter and Schroeder, Thomas}, title = {Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 232}, abstract = {Ultra thin dielectric films (<20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10-8 A/cm2) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO2 - based alkaline earth perovskite - BaHfO3 with subsequent admixture of TiO2, resulting in formation of BaHf0.5Ti0.5O3 compound. The analysis of data indicates that band gap for HfO2 is similar to BaHfO3 and amounts 5.8 eV; for BaHf0.5Ti0.5O3 it decreases to 3.8 eV. We conclude that the addition of TiO2 to BaHfO3 increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior.}, language = {en} } @misc{LippertDabrowskiOberbecketal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Oberbeck, Lars and Schroeder, Uwe and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films}, series = {Journal of the electrochemical society}, volume = {155}, journal = {Journal of the electrochemical society}, number = {5}, issn = {1945-7111}, doi = {10.1149/1.2875741}, pages = {G97 -- G114}, language = {en} } @misc{DabrowskiLippertAvilaetal., author = {Dabrowski, Jarek Marek and Lippert, Gunther and Avila, J. and Baringhaus, Jens and Colambo, I. and Dedkov, Yu. S. and Herziger, Felix and Lupina, Grzegorz and Maultzsch, J. and Schaffus, T. and Schr{\"o}der, Thomas and Sowinska, Małgorzata and Tegenkamp, Christoph and Vignaud, D. and Asensio, Maria Carmen}, title = {Understanding the growth mechanism of graphene on Ge/Si(001) surfaces}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {6}, issn = {2045-2322}, doi = {10.1038/srep31639}, pages = {Art. 31639}, language = {en} } @misc{LukosiusLippertDabrowskietal., author = {Lukosius, Mindaugas and Lippert, Gunther and Dabrowski, Jarek Marek and Kitzmann, Julia and Lisker, Marco and Kulse, Philipp and Kr{\"u}ger, Andreas and Fursenko, Oksana and Costina, Ioan and Trusch, Andreas and Yamamoto, Yuji and Wolff, Andre and Mai, Andreas and Schr{\"o}der, Thomas}, title = {Graphene Synthesis and Processing on Ge Substrates}, series = {ECS transactions}, volume = {75}, journal = {ECS transactions}, number = {8}, issn = {1938-6737}, doi = {10.1149/07508.0533ecst}, pages = {533 -- 540}, language = {en} } @misc{LukosiusDabrowskiLiskeretal., author = {Lukosius, Mindaugas and Dabrowski, Jarek Marek and Lisker, Marco and Kitzmann, Julia and Schulze, Sebastian and Lippert, Gunther and Fursenko, Oksana and Yamamoto, Yuji and Schubert, Markus Andreas and Krause, Hans-Michael and Wolff, Andre and Mai, A. and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {49}, issn = {1944-8244}, doi = {10.1021/acsami.6b11397}, pages = {33786 -- 33793}, language = {en} }