@misc{StrobelAlvaradoChavarinKnautetal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Knaut, Martin and Albert, Matthias and Heinzig, Andr{\´e} and Gummadi, Likhith and Wenger, Christian and Mikolajick, Thomas}, title = {p-Type Schottky contacts for graphene adjustable-Barrier phototransistors}, series = {Nanomaterials}, volume = {14}, journal = {Nanomaterials}, number = {13}, editor = {Giannazzo, Filippo and Agnello, Simonpietro and Seravalli, Luca and Bondino, Federica}, publisher = {MDPI}, issn = {2079-4991}, doi = {10.3390/nano14131140}, abstract = {The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on-off ratios of close to 10 3 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.}, language = {en} }