@inproceedings{HenkelTallaridaHaeberleetal., author = {Henkel, Karsten and Tallarida, Massimo and Haeberle, J{\"o}rg and Gargouri, Hassan and Naumann, Franziska and Gruska, Bernd and Arens, Michael and Schmeißer, Dieter}, title = {PE-ALD-Al2O3-Schichten f{\"u}r die Passivierung von Solarzellen}, series = {Tagungsband Photovoltaik-Meeting: Anwendungen-Qualit{\"a}t-Perspektiven, Senftenberg, 16.04.2014}, booktitle = {Tagungsband Photovoltaik-Meeting: Anwendungen-Qualit{\"a}t-Perspektiven, Senftenberg, 16.04.2014}, editor = {Gl{\"u}ck, Bernhard K. and Schmidt, Sindy and Stein, Erhard and Raschke, J{\"o}rg-Uwe and Richter, Hans}, publisher = {Cottbus-Senftenberg}, address = {BTU}, pages = {7 -- 14}, abstract = {D{\"u}nne Al2O3-Schichten wurden bei Substrattemperaturen zwischen Raumtemperatur und 200°C mittels PE-ALD auf Si-Substraten abgeschieden und ellipsometrisch, spektroskopisch und elektrisch charakterisiert. Ihr Potenzial f{\"u}r die chemische und Feldeffektpassivierung der Oberfl{\"a}chenrekombination wird bewertet.}, language = {de} } @inproceedings{HenkelDasSowinskaetal., author = {Henkel, Karsten and Das, Chittaranjan and Sowinska, Małgorzata and Tallarida, Massimo and Schmeißer, Dieter and Gargouri, Hassan and K{\"a}rkk{\"a}nen, Irina and Schneidewind, Jessica and Gruska, Bernd and Arens, Michael}, title = {Charakterisierung von TiO2-ALD-Schichten und deren Nutzung f{\"u}r die Passivierung von Si-Photokathoden}, series = {Tagungsband Photovoltaik-Meeting: Anwendungen-Qualit{\"a}t-Perspektiven, Senftenberg, 15.04.2015}, booktitle = {Tagungsband Photovoltaik-Meeting: Anwendungen-Qualit{\"a}t-Perspektiven, Senftenberg, 15.04.2015}, editor = {Gl{\"u}ck, B. K. and Schmidt, S. and Stein, E. and Raschke, J{\"o}rg-Uwe and Richter, H.}, publisher = {BTU Cottbus-Senftenberg}, address = {Senftenberg}, pages = {3 -- 8}, abstract = {Wir berichten zun{\"a}chst {\"u}ber den Einfluss der Methode der Atomlagenabscheidung auf die TiO2-Schichteigenschaften. Insbesondere wird der Zusammenhang zwischen Ti3+- sowie Interbandzust{\"a}nden mit elektrischen Kennlinien und deren Einfluss auf funktionale Schichteigenschaften diskutiert. Anschließend werden Mikrostrukturierung, Grenzfl{\"a}chen-Engineering und konforme Abscheidung einer TiO2-ALD-Schutzschicht effektiv zur Performance-Steigerung von p-Si-Photokathoden angewendet.}, language = {de} } @inproceedings{TallaridaHenkelGargourietal., author = {Tallarida, Massimo and Henkel, Karsten and Gargouri, Hassan and Haeberle, J{\"o}rg and Gruska, Bernd and Arens, Matthias and Schmeißer, Dieter}, title = {New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Thermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200∘C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the deposition temperature. Investigations with capacitance-voltage and conductance-voltage measurements showed a very low interface states density for the PE-ALD films.}, language = {en} }