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W. and Schofield, S. 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F. and Benedetti, Alessandro and Chiussi, Stefano and Zaumseil, Peter and Schwartz, Bernhard and Busch, Kurt and Schulze, J.}, title = {Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling}, series = {Physical Review B 94}, volume = {94}, journal = {Physical Review B 94}, number = {24}, doi = {10.1103/PhysRevB.94.245304}, pages = {245304}, language = {en} } @misc{TarnawskaZoellnerNiermannetal., author = {Tarnawska, Lidia Lupina and Z{\"o}llner, Marvin Hartwig and Niermann, T. and Dietrich, Burkhart and Capellini, Giovanni and Thapa, Sarad and H{\"a}berlen, Maik and Lehmann, M. and Storck, Peter and Schr{\"o}der, Thomas}, title = {Zero Lattice Mismatch and Truly Single Crystalline ScN Buffer Layers for GaN Growth on Silicon}, series = {Applied Physics Letters}, volume = {107}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4935856}, pages = {201907}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} } @misc{VirgilioSchroederYamamotoetal., author = {Virgilio, Michele and Schr{\"o}der, Thomas and Yamamoto, Yuji and Capellini, Giovanni}, title = {Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling}, series = {Journal of Applied Physics}, volume = {118}, journal = {Journal of Applied 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Koprucki, Thomas}, title = {Robustness analysis of a device concept for edge-emitting lasers based on strained Germanium}, series = {Optical and Quantum Electronics}, volume = {48}, journal = {Optical and Quantum Electronics}, number = {2, Article 156}, issn = {1572-817X}, doi = {10.1007/s11082-016-0394-4}, pages = {7}, language = {en} } @misc{ZaumseilSchubertYamamotoetal., author = {Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Skibitzki, Oliver and Capellini, Giovanni and Schr{\"o}der, Thomas}, title = {Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.242.402}, pages = {402 -- 407}, language = {en} } @misc{TaokaCapelliniDrieschetal., author = {Taoka, Noriyuki and Capellini, Giovanni and Driesch, Nils von den and Buca, Dan and Zaumseil, Peter and Schubert, Markus Andreas and Klesse, Wolfgang Matthias and Montanari, Michele and Schr{\"o}der, Thomas}, title = {Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer}, series = {Applied Physics Express}, volume = {9}, journal = {Applied Physics Express}, number = {3}, issn = {1882-0786}, doi = {10.7567/APEX.9.031201}, pages = {031201}, language = {en} } @misc{NiuCapelliniSchubertetal., author = {Niu, Gang and Capellini, Giovanni and Schubert, Markus Andreas and Niermann, Tore and Zaumseil, Peter and Katzer, Jens and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Xie, Ya-Hong and K{\"a}nel, Hans von and Schr{\"o}der, Thomas}, title = {Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/srep22709}, pages = {22709}, language = {en} } @misc{NiuCapelliniHatamietal., author = {Niu, Gang and Capellini, Giovanni and Hatami, Fariba and Bartolomeo, Antonio di and Niermann, Tore and Hameed, Hussein Emad and Schubert, Markus Andreas and Krause, Hans-Michael and Zaumseil, Peter and Skibitzki, Oliver and Masselink, William T. and Lehmann, Michael and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {40}, issn = {1944-8244}, doi = {10.1021/acsami.6b09592}, pages = {26948 -- 26955}, language = {en} } @misc{SkibitzkiCapelliniYamamotoetal., author = {Skibitzki, Oliver and Capellini, Giovanni and Yamamoto, Yuji and Zaumseil, Peter and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Ballabio, Andrea and Bergamaschini, Roberto and Salvalaglio, Marco and Miglio, Leo and Montalenti, Francesco}, title = {RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {39}, issn = {1944-8244}, doi = {10.1021/acsami.6b07694}, pages = {26374 -- 26380}, language = {en} } @misc{SchlykowKlesseNiuetal., author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas}, title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4967500}, pages = {202102}, language = {en} } @misc{GrzelaCapelliniKoczorowskietal., author = {Grzela, Tomasz and Capellini, Giovanni and Koczorowski, Wojciech and Schubert, Markus Andreas and Czajka, Ryszard and Curson, Neil J. and Heidmann, Inga and Schmidt, Thomas and Falta, Jens and Schr{\"o}der, Thomas}, title = {Growth and evolution of nickel - germanide nanonstructures on Ge(001)}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {38}, issn = {1361-6528}, pages = {385701}, language = {en} } @misc{FischerClausenSchwarzetal., author = {Fischer, Inga Anita and Clausen, Caterina J. and Schwarz, Daniel and Zaumseil, Peter and Capellini, Giovanni and Virgilio, Michele and Da Silva Figueira, Maria Cecilia and Birner, Stefan and Koelling, Sebastian and Koenraad, Paul M. and Huang, Michael R. S. and Koch, Christoph T. and Wendav, Torsten and Busch, Kurt and Schulze, J{\"o}rg}, title = {Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells}, series = {Physical Review Materials}, volume = {4}, journal = {Physical Review Materials}, number = {2}, issn = {2475-9953}, doi = {10.1103/PhysRevMaterials.4.024601}, pages = {10}, language = {en} } @misc{SchlykowManganelliRoemeretal., author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita}, title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas}, series = {Nanotechnology}, volume = {31}, journal = {Nanotechnology}, number = {34}, issn = {1361-6528}, doi = {10.1088/1361-6528/ab91ef}, pages = {11}, language = {en} } @misc{SchlipfTetznerSpiritoetal., author = {Schlipf, Jon and Tetzner, Henriette and Spirito, Davide and Manganelli, Constanza Lucia and Capellini, Giovanni and Huang, Michael R. S. and Koch, Christoph T. and Clausen, Caterina J. and Elsayed, Ahmed and Schulze, J{\"o}rg and Fischer, Inga Anita}, title = {Raman shifts in MBE-grown SixGe1 - x - ySny alloys with large Si content}, series = {Journal of Raman Spectroscopy}, journal = {Journal of Raman Spectroscopy}, issn = {1097-4555}, doi = {10.1002/jrs.6098}, pages = {9}, language = {en} } @misc{TetznerFischerSkibitzkietal., author = {Tetzner, Henriette and Fischer, Inga Anita and Skibitzki, Oliver and Mirza, M. M. and Manganelli, Constanza Lucia and Luongo, G. and Spirito, Davide and Douglas, J. P. and De Seta, Monica and Capellini, Giovanni}, title = {Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)}, series = {Applied Physics Letters}, volume = {119}, journal = {Applied Physics Letters}, number = {15}, issn = {1077-3118}, doi = {10.1063/5.0064477}, language = {en} } @misc{TetznerSeifertSkibitzkietal., author = {Tetzner, Henriette and Seifert, W. and Skibitzki, Oliver and Yamamoto, Yuji and Lisker, Marco and Mirza, M. 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