@misc{SalvalaglioBergamaschiniIsaetal., author = {Salvalaglio, Marco and Bergamaschini, Roberto and Isa, Fabio and Scaccabarozi, Andrea and Isella, Giovanni and Backofen, Rainer and Voigt, Axel and Montalenti, Francesco and Capellini, Giovanni and Marzegalli, Anna and Schroeder, Thomas and K{\"a}nel, Hans von and Miglio, Leo}, title = {Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.5b05054}, pages = {19219 -- 19225}, language = {en} } @misc{FischerBrehmDeSetaetal., author = {Fischer, Inga Anita and Brehm, Moritz and De Seta, Monica and Isella, Giovanni and Paul, Douglas J. and Virgilio, Michele and Capellini, Giovanni}, title = {On-chip infrared photonics with Si-Ge-heterostructures: What is next?}, series = {APL Photonics}, volume = {7}, journal = {APL Photonics}, number = {5}, issn = {2378-0967}, doi = {10.1063/5.0078608}, pages = {050901-1 -- 050901-20}, abstract = {The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{CapelliniKozłowskiYamamotoetal., author = {Capellini, Giovanni and Kozłowski, Grzegorz and Yamamoto, Yuji and Lisker, Marco and Tillack, Bernd and Ghrib, A. and Kersauson, M. de and El Kurdi, M. and Boucaud, P. and Schroeder, Thomas}, title = {Tensile strained Ge layers obtained via Si-CMOS compatible approach}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {1}, pages = {013513-1 -- 013513-6}, language = {en} } @misc{VirgilioManganelliGrossoetal., author = {Virgilio, Michele and Manganelli, Constanza Lucia and Grosso, G. and Schroeder, Thomas and Capellini, Giovanni}, title = {Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers}, series = {Journal of Applied Physics}, volume = {114}, journal = {Journal of Applied Physics}, number = {24}, issn = {0021-8979}, pages = {243102 -- 243102-11}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{ChahineZoellnerRichardetal., author = {Chahine, Gilbert A. and Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Subhajit, G. and Zaumseil, Peter and Capellini, Giovanni and Schroeder, Thomas and Sch{\"u}lli, Tobias U.}, title = {Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4909529}, pages = {071902-1 -- 071902-4}, language = {en} } @misc{VirgilioWitzigmannBologninietal., author = {Virgilio, Michele and Witzigmann, Bernd and Bolognini, Gabriele and Guha, Subhajit and Schr{\"o}der, Thomas and Capellini, Giovanni}, title = {CMOS-compatible, modulator concept based on strain-induced refractive-index modulation}, series = {Optics Express}, volume = {23}, journal = {Optics Express}, number = {5}, issn = {1094-4087}, doi = {10.1364/OE.23.005930}, pages = {5930 -- 5940}, language = {en} } @misc{KoczorowskiGrzelaRadnyetal., author = {Koczorowski, Wojciech and Grzela, Tomasz and Radny, M. W. and Schofield, S. R. and Capellini, Giovanni and Czajka, Ryszard and Schr{\"o}der, Thomas and Curson, Neil J.}, title = {Ba termination of Ge(001) studied with STM}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {15}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/15/155701}, pages = {155701}, language = {en} } @misc{PeschkaThomasGlitzkyetal., author = {Peschka, Dirk and Thomas, Marc and Glitzky, Annegret and N{\"u}rnberg, Reiner and G{\"a}rtner, Klaus and Virgilio, Michele and Guha, Shekhar and Schr{\"o}der, Thomas and Capellini, Giovanni and Koprucki, Thomas}, title = {Modeling of edge-emitting lasers based on tensile strained Germanium microstripes}, series = {IEEE Photonics Journal}, volume = {7}, journal = {IEEE Photonics Journal}, number = {3}, issn = {1943-0655}, doi = {10.1109/JPHOT.2015.2427093}, language = {en} }