@misc{HenkelGargouriGruskaetal., author = {Henkel, Karsten and Gargouri, Hassan and Gruska, Bernd and Arens, Michael and Tallarida, Massimo and Schmeißer, Dieter}, title = {Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by PE-ALD at 25°C ≤ T ≤ 200°C}, series = {Journal of Vacuum Science and Technology A}, volume = {1}, journal = {Journal of Vacuum Science and Technology A}, number = {32}, doi = {10.1116/1.4831897}, pages = {01A107-1 -- 01A107-10}, abstract = {In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance-voltage and conductance-voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D it) ~1011 eV-1 cm-2 could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N fix) around -2.5 × 1012 cm-2. At the substrate temperature of 150 °C, highest N fix (-2.9 × 1012 cm-2) and moderate D it (2.7 × 1011 eV-1 cm-2) values were observed. The as deposited PE-ALD layer at RT shows both low D it in the range of (1 to 3) × 1011 eV-1 cm-2 and low N fix (-4.4 × 1011 cm-2) at the same time. The dependencies of N fix, D it, and relative permittivity on the substrate temperatures and its adjustability are discussed.}, language = {en} } @inproceedings{HenkelTallaridaHaeberleetal., author = {Henkel, Karsten and Tallarida, Massimo and Haeberle, J{\"o}rg and Gargouri, Hassan and Naumann, Franziska and Gruska, Bernd and Arens, Michael and Schmeißer, Dieter}, title = {PE-ALD-Al2O3-Schichten f{\"u}r die Passivierung von Solarzellen}, series = {Tagungsband Photovoltaik-Meeting: Anwendungen-Qualit{\"a}t-Perspektiven, Senftenberg, 16.04.2014}, booktitle = {Tagungsband Photovoltaik-Meeting: Anwendungen-Qualit{\"a}t-Perspektiven, Senftenberg, 16.04.2014}, editor = {Gl{\"u}ck, Bernhard K. and Schmidt, Sindy and Stein, Erhard and Raschke, J{\"o}rg-Uwe and Richter, Hans}, publisher = {Cottbus-Senftenberg}, address = {BTU}, pages = {7 -- 14}, abstract = {D{\"u}nne Al2O3-Schichten wurden bei Substrattemperaturen zwischen Raumtemperatur und 200°C mittels PE-ALD auf Si-Substraten abgeschieden und ellipsometrisch, spektroskopisch und elektrisch charakterisiert. Ihr Potenzial f{\"u}r die chemische und Feldeffektpassivierung der Oberfl{\"a}chenrekombination wird bewertet.}, language = {de} } @inproceedings{TallaridaHenkelGargourietal., author = {Tallarida, Massimo and Henkel, Karsten and Gargouri, Hassan and Haeberle, J{\"o}rg and Gruska, Bernd and Arens, Matthias and Schmeißer, Dieter}, title = {New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {Thermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200∘C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the deposition temperature. Investigations with capacitance-voltage and conductance-voltage measurements showed a very low interface states density for the PE-ALD films.}, language = {en} }