@misc{SchlipfFischer, author = {Schlipf, Jon and Fischer, Inga Anita}, title = {Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor}, series = {Optics Express}, volume = {Vol. 29}, journal = {Optics Express}, number = {22}, issn = {1094-4087}, doi = {10.1364/OE.438585}, pages = {36201 -- 36210}, language = {en} } @misc{TetznerFischerSkibitzkietal., author = {Tetzner, Henriette and Fischer, Inga Anita and Skibitzki, Oliver and Mirza, M. M. and Manganelli, Constanza Lucia and Luongo, G. and Spirito, Davide and Douglas, J. P. and De Seta, Monica and Capellini, Giovanni}, title = {Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)}, series = {Applied Physics Letters}, volume = {119}, journal = {Applied Physics Letters}, number = {15}, issn = {1077-3118}, doi = {10.1063/5.0064477}, language = {en} } @misc{BergmannAyasseSchlipfetal., author = {Bergmann, Fritz and Ayasse, Markus and Schlipf, Jon and M{\"o}rz, Florian and Weißhaupt, David and Oehme, Michael and Prucnal, Slawomir and Kawaguchi, Yuma and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Plasmonic gratings from highly doped Ge1-ySny films on Si}, series = {Journal of Physics D: Applied Physics}, volume = {54}, journal = {Journal of Physics D: Applied Physics}, number = {44}, issn = {1361-6463}, language = {en} } @misc{BerkmannAyasseMoerzetal., author = {Berkmann, Fritz and Ayasse, Markus and M{\"o}rz, Florian and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Titanium and Nickel as alternative materials for mid Infrared Plasmonic}, series = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, journal = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, publisher = {Piscataway}, address = {IEEE}, isbn = {978-953-233-101-1}, doi = {10.23919/MIPRO52101.2021.9597155}, pages = {36 -- 39}, language = {en} } @misc{FunkKernWeisshauptetal., author = {Funk, Hannes S. and Kern, Michael and Weißhaupt, David and S{\"u}rgers, Christoph and Fischer, Inga Anita and Oehme, Michael and Slageren, Joris van and Schulze, J{\"o}rg}, title = {Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers}, series = {Journal of Magnetism and Magnetic Materials}, volume = {546}, journal = {Journal of Magnetism and Magnetic Materials}, issn = {0304-8853}, doi = {10.1016/j.jmmm.2021.168731.}, pages = {8}, language = {en} } @misc{ElogailBerkmannClausenetal., author = {Elogail, Yasmine and Berkmann, Fritz and Clausen, Caterina J. and Fischer, Inga Anita and H{\"a}nel, Linda A. and Schwarz, Daniel and Schulze, J{\"o}rg}, title = {Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si}, series = {Microelectronics Journal}, volume = {123}, journal = {Microelectronics Journal}, issn = {1879-2391}, doi = {10.1016/j.mejo.2022.105404}, pages = {11}, language = {en} } @misc{XieBirowskaFunketal., author = {Xie, Yufang and Birowska, Magdalena and Funk, Hannes S. and Fischer, Inga Anita and Schwarz, Daniel and Schulze, J{\"o}rg and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Tuning of Curie temperature in Mn5Ge3 films}, series = {Journal of Applied Physics}, volume = {131}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/5.0066717}, pages = {105102-1 -- 105102-8}, language = {en} } @misc{BerkmannAugelHacketal., author = {Berkmann, Fritz and Augel, Lion and Hack, Michael and Kawaguchi, Yuma and Weißhaupt, David and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann}, series = {IEEE Photonics Journal}, volume = {14}, journal = {IEEE Photonics Journal}, number = {3}, issn = {1943-0655}, doi = {10.1109/JPHOT.2022.3177354}, pages = {1 -- 8}, language = {en} } @misc{XieLiBegezaetal., author = {Xie, Yufang and Li, Zichao and Begeza, Viktor and Funk, Hannes S. and Fischer, Inga Anita and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3}, series = {Semiconductor Science and Technology}, volume = {37}, journal = {Semiconductor Science and Technology}, number = {6}, issn = {1361-6641}, doi = {10.1088/1361-6641/ac6689}, pages = {1 -- 8}, abstract = {Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters.}, language = {en} } @misc{FischerBrehmDeSetaetal., author = {Fischer, Inga Anita and Brehm, Moritz and De Seta, Monica and Isella, Giovanni and Paul, Douglas J. and Virgilio, Michele and Capellini, Giovanni}, title = {On-chip infrared photonics with Si-Ge-heterostructures: What is next?}, series = {APL Photonics}, volume = {7}, journal = {APL Photonics}, number = {5}, issn = {2378-0967}, doi = {10.1063/5.0078608}, pages = {050901-1 -- 050901-20}, abstract = {The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform}, language = {en} } @misc{MaiMarschmeyerPeczeketal., author = {Mai, Christian and Marschmeyer, Steffen and Peczek, Anna and Kroh, Aleksandra and Jose, Josmy and Reiter, Sebastian and Fischer, Inga Anita and Wenger, Christian and Mai, Andreas}, title = {Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology}, series = {ECS Transactions}, volume = {109}, journal = {ECS Transactions}, number = {4}, issn = {1938-5862}, doi = {10.1149/10904.0035ecst}, pages = {35 -- 46}, abstract = {In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 \% and RMS of 1.413 nm for 150 nm thick TiN layers.}, language = {en} } @misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} }