@misc{WeisshauptFunkSuergersetal.,
author = {Weißhaupt, David and Funk, Hannes S. and S{\"u}rgers, Christoph and Fischer, Gerda and Oehme, Michael and Schwarz, Daniel and Fischer, Inga Anita and Slageren, Joris van and Schulze, J{\"o}rg},
title = {Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics},
series = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021},
journal = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021},
publisher = {Piscataway},
address = {IEEE},
isbn = {978-1-6654-4761-4},
issn = {978-953-233-101-1},
doi = {10.23919/MIPRO52101.2021.9596924.},
pages = {45 -- 49},
language = {en}
}
@misc{WeisshauptSuergersBloosetal.,
author = {Weißhaupt, David and S{\"u}rgers, Christoph and Bloos, Dominik and Funk, Hannes Simon and Oehme, Michael and Fischer, Gerda and Schubert, Markus Andreas and Wenger, Christian and van Slageren, Joris and Fischer, Inga Anita and Schulze, J{\"o}rg},
title = {Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas},
series = {Semiconductor Science and Technology},
volume = {39},
journal = {Semiconductor Science and Technology},
number = {12},
publisher = {IOP Publishing},
issn = {0268-1242},
doi = {10.1088/1361-6641/ad8d06},
pages = {1 -- 10},
abstract = {Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.},
language = {en}
}
@misc{SchwartzOehmeKosteckietal.,
author = {Schwartz, Bernhard and Oehme, Michael and Kostecki, Konrad and Widmann, Daniel and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Fischer, Inga Anita and Wendav, Torsten and Kasper, Erich and Schulze, J{\"o}rg and Kittler, Martin},
title = {Electroluminescence of GeSn/Ge MQW LEDs on Si substrate},
series = {Optics Letters},
volume = {40},
journal = {Optics Letters},
number = {13},
doi = {10.1364/OL40.003209},
pages = {3209 -- 3212},
language = {en}
}
@misc{WendavFischerVirgilioetal.,
author = {Wendav, Torsten and Fischer, Inga Anita and Virgilio, Michele and Capellini, Giovanni and Oliveira, F. and Cerqueira, M. F. and Benedetti, Alessandro and Chiussi, Stefano and Zaumseil, Peter and Schwartz, Bernhard and Busch, Kurt and Schulze, J.},
title = {Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling},
series = {Physical Review B 94},
volume = {94},
journal = {Physical Review B 94},
number = {24},
doi = {10.1103/PhysRevB.94.245304},
pages = {245304},
language = {en}
}
@misc{KoernerSchwarzFischeretal.,
author = {K{\"o}rner, Roman and Schwarz, Daniel and Fischer, Inga Anita and Augel, Lion and Bechler, Stefan and H{\"a}nel, Linda A. and Kern, Michael and Oehme, Michael and Rolseth, Erlend Granbo and Schwartz, Bernhard and Weißhaupt, David and Zhang, Wogong and Schulze, J{\"o}rg},
title = {The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si},
series = {2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016},
journal = {2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016},
publisher = {IEEE},
address = {Piscataway, NJ},
isbn = {978-1-5090-3901-2},
pages = {22.5.1 -- 22.5.4},
language = {en}
}
@misc{SchlipfMartinStchakovskyetal.,
author = {Schlipf, Jon and Martin, Elena and Stchakovsky, Michel and Benedetti, Alessandro and Fischer, Inga Anita and Schulze, J{\"o}rg and Chiussi, Stefano},
title = {Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy},
series = {Journal of Vacuum Science \& Technology B},
volume = {37},
journal = {Journal of Vacuum Science \& Technology B},
number = {6},
issn = {2166-2754},
doi = {10.1116/1.5122777},
language = {en}
}
@misc{FunkKernWeisshauptetal.,
author = {Funk, Hannes S. and Kern, Michael and Weisshaupt, David and S{\"u}rgers, Christoph and Fischer, Inga Anita and Oehme, Michael and Slageren, Joris van and Schulze, J{\"o}rg},
title = {Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content},
series = {ECS Transactions},
volume = {93},
journal = {ECS Transactions},
number = {1},
issn = {1938-5862},
doi = {10.1149/09301.0101ecst},
pages = {101 -- 104},
language = {en}
}
@misc{FischerAugelBerkmannetal.,
author = {Fischer, Inga Anita and Augel, Lion and Berkmann, Fritz and Kawaguchi, Yuma and Schlipf, Jon and Schulze, J{\"o}rg},
title = {Plasmonics-Integrated Ge PIN-Photodetectors},
series = {ECS Transactions},
volume = {93},
journal = {ECS Transactions},
number = {1},
issn = {1938-5862},
doi = {10.1149/09301.0041ecst},
pages = {41 -- 44},
language = {en}
}
@misc{FischerClausenSchwarzetal.,
author = {Fischer, Inga Anita and Clausen, Caterina J. and Schwarz, Daniel and Zaumseil, Peter and Capellini, Giovanni and Virgilio, Michele and Da Silva Figueira, Maria Cecilia and Birner, Stefan and Koelling, Sebastian and Koenraad, Paul M. and Huang, Michael R. S. and Koch, Christoph T. and Wendav, Torsten and Busch, Kurt and Schulze, J{\"o}rg},
title = {Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells},
series = {Physical Review Materials},
volume = {4},
journal = {Physical Review Materials},
number = {2},
issn = {2475-9953},
doi = {10.1103/PhysRevMaterials.4.024601},
pages = {10},
language = {en}
}
@misc{SchlykowManganelliRoemeretal.,
author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita},
title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas},
series = {Nanotechnology},
volume = {31},
journal = {Nanotechnology},
number = {34},
issn = {1361-6528},
doi = {10.1088/1361-6528/ab91ef},
pages = {11},
language = {en}
}
@misc{AugelFischerGollhoferetal.,
author = {Augel, Lion and Fischer, Inga Anita and Gollhofer, Martin and Oehme, Michael and Schulze, J{\"o}rg},
title = {Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas},
series = {Journal of Applied Physics},
volume = {128},
journal = {Journal of Applied Physics},
number = {1},
issn = {1089-7550},
doi = {10.1063/5.0012279},
pages = {013105-1 -- 013105-8},
language = {en}
}
@misc{WeisshauptFunkKernetal.,
author = {Weißhaupt, David and Funk, Hannes S. and Kern, Michal and Dettling, Marco M. and Schwarz, Daniel and Oehme, Michael and S{\"u}rgers, Christoph and Slageren, Joris van and Fischer, Inga Anita and Schulze, J{\"o}rg},
title = {Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8\% Sn},
series = {Journal of Physics: Condensed Matter},
volume = {33},
journal = {Journal of Physics: Condensed Matter},
number = {8},
issn = {1361-648X},
doi = {10.1088/1361-648X/abcb68},
pages = {8},
language = {en}
}
@misc{SchlipfTetznerSpiritoetal.,
author = {Schlipf, Jon and Tetzner, Henriette and Spirito, Davide and Manganelli, Constanza Lucia and Capellini, Giovanni and Huang, Michael R. S. and Koch, Christoph T. and Clausen, Caterina J. and Elsayed, Ahmed and Schulze, J{\"o}rg and Fischer, Inga Anita},
title = {Raman shifts in MBE-grown SixGe1 - x - ySny alloys with large Si content},
series = {Journal of Raman Spectroscopy},
journal = {Journal of Raman Spectroscopy},
issn = {1097-4555},
doi = {10.1002/jrs.6098},
pages = {9},
language = {en}
}
@misc{AugelSchlipfBullertetal.,
author = {Augel, Lion and Schlipf, Jon and Bullert, Sergej and B{\"u}rzele, Sebastian and Schulze, J{\"o}rg and Fischer, Inga Anita},
title = {Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes},
series = {Scientific Reports},
journal = {Scientific Reports},
number = {11},
issn = {2045-2322},
doi = {10.1038/s41598-021-85012-z},
pages = {9},
abstract = {Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.},
language = {en}
}
@misc{SchlipfFischer,
author = {Schlipf, Jon and Fischer, Inga Anita},
title = {Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor},
series = {Optics Express},
volume = {Vol. 29},
journal = {Optics Express},
number = {22},
issn = {1094-4087},
doi = {10.1364/OE.438585},
pages = {36201 -- 36210},
language = {en}
}
@misc{TetznerFischerSkibitzkietal.,
author = {Tetzner, Henriette and Fischer, Inga Anita and Skibitzki, Oliver and Mirza, M. M. and Manganelli, Constanza Lucia and Luongo, G. and Spirito, Davide and Douglas, J. P. and De Seta, Monica and Capellini, Giovanni},
title = {Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)},
series = {Applied Physics Letters},
volume = {119},
journal = {Applied Physics Letters},
number = {15},
issn = {1077-3118},
doi = {10.1063/5.0064477},
language = {en}
}
@misc{BergmannAyasseSchlipfetal.,
author = {Bergmann, Fritz and Ayasse, Markus and Schlipf, Jon and M{\"o}rz, Florian and Weißhaupt, David and Oehme, Michael and Prucnal, Slawomir and Kawaguchi, Yuma and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg},
title = {Plasmonic gratings from highly doped Ge1-ySny films on Si},
series = {Journal of Physics D: Applied Physics},
volume = {54},
journal = {Journal of Physics D: Applied Physics},
number = {44},
issn = {1361-6463},
language = {en}
}
@misc{BerkmannAyasseMoerzetal.,
author = {Berkmann, Fritz and Ayasse, Markus and M{\"o}rz, Florian and Fischer, Inga Anita and Schulze, J{\"o}rg},
title = {Titanium and Nickel as alternative materials for mid Infrared Plasmonic},
series = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021},
journal = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021},
publisher = {Piscataway},
address = {IEEE},
isbn = {978-953-233-101-1},
doi = {10.23919/MIPRO52101.2021.9597155},
pages = {36 -- 39},
language = {en}
}
@misc{FunkKernWeisshauptetal.,
author = {Funk, Hannes S. and Kern, Michael and Weißhaupt, David and S{\"u}rgers, Christoph and Fischer, Inga Anita and Oehme, Michael and Slageren, Joris van and Schulze, J{\"o}rg},
title = {Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers},
series = {Journal of Magnetism and Magnetic Materials},
volume = {546},
journal = {Journal of Magnetism and Magnetic Materials},
issn = {0304-8853},
doi = {10.1016/j.jmmm.2021.168731.},
pages = {8},
language = {en}
}
@misc{ElogailBerkmannClausenetal.,
author = {Elogail, Yasmine and Berkmann, Fritz and Clausen, Caterina J. and Fischer, Inga Anita and H{\"a}nel, Linda A. and Schwarz, Daniel and Schulze, J{\"o}rg},
title = {Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si},
series = {Microelectronics Journal},
volume = {123},
journal = {Microelectronics Journal},
issn = {1879-2391},
doi = {10.1016/j.mejo.2022.105404},
pages = {11},
language = {en}
}
@misc{XieBirowskaFunketal.,
author = {Xie, Yufang and Birowska, Magdalena and Funk, Hannes S. and Fischer, Inga Anita and Schwarz, Daniel and Schulze, J{\"o}rg and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir},
title = {Tuning of Curie temperature in Mn5Ge3 films},
series = {Journal of Applied Physics},
volume = {131},
journal = {Journal of Applied Physics},
issn = {1089-7550},
doi = {10.1063/5.0066717},
pages = {105102-1 -- 105102-8},
language = {en}
}