@misc{WeisshauptFunkSuergersetal., author = {Weißhaupt, David and Funk, Hannes S. and S{\"u}rgers, Christoph and Fischer, Gerda and Oehme, Michael and Schwarz, Daniel and Fischer, Inga Anita and Slageren, Joris van and Schulze, J{\"o}rg}, title = {Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics}, series = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, journal = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, publisher = {Piscataway}, address = {IEEE}, isbn = {978-1-6654-4761-4}, issn = {978-953-233-101-1}, doi = {10.23919/MIPRO52101.2021.9596924.}, pages = {45 -- 49}, language = {en} } @misc{NitschRatzkePozarowskaetal., author = {Nitsch, Paul-G. and Ratzke, Markus and Pozarowska, Emilia and Flege, Jan Ingo and Alvarado Chavarin, Carlos and Wenger, Christian and Fischer, Inga Anita}, title = {Deposition of reduced ceria thin films by reactive magnetron sputtering for the development of a resistive gas sensor}, series = {Verhandlungen der DPG, Berlin 2024}, journal = {Verhandlungen der DPG, Berlin 2024}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {The use of cerium oxide for hydrogen sensing is limited by the low electrical conductivity of layers deposited from a ceria target. To increase the electrical conductivity, partially reduced cerium oxide layers were obtained from a metallic cerium target by reactive magnetron sputtering. The proportions of the oxidation states Ce3+, present in reduced species, and Ce4+, present in fully oxidized species, were determined by ex-situ XPS. For electrical characterization, films were deposited on planarized tungsten finger electrodes. IV curves were measured over several days to investigate possible influences of oxygen and humidity on electrical conductivity. The morphological stability of the layers under ambient conditions was investigated by microscopical methods. The XPS results show a significant amount of Ce3+ in the layers. The electrical conductivity of as-grown samples is several orders of magnitude higher than that of samples grown from a ceria target. However, the conductivity decreases over time, indicating an oxidation of the layers. The surface morphology of the samples was found to be changing drastically within days, leading to partial delamination.}, language = {en} } @misc{BerkmannAugelHacketal., author = {Berkmann, Fritz and Augel, Lion and Hack, Michael and Kawaguchi, Yuma and Weißhaupt, David and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann}, series = {IEEE Photonics Journal}, volume = {14}, journal = {IEEE Photonics Journal}, number = {3}, issn = {1943-0655}, doi = {10.1109/JPHOT.2022.3177354}, pages = {1 -- 8}, language = {en} } @misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{XieBirowskaFunketal., author = {Xie, Yufang and Birowska, Magdalena and Funk, Hannes S. and Fischer, Inga Anita and Schwarz, Daniel and Schulze, J{\"o}rg and Zeng, Yu-Jia and Helm, Manfred and Zhou, Shengqiang and Prucnal, Slawomir}, title = {Tuning of Curie temperature in Mn5Ge3 films}, series = {Journal of Applied Physics}, volume = {131}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/5.0066717}, pages = {105102-1 -- 105102-8}, language = {en} } @misc{WendavFischerVirgilioetal., author = {Wendav, Torsten and Fischer, Inga Anita and Virgilio, Michele and Capellini, Giovanni and Oliveira, F. and Cerqueira, M. F. and Benedetti, A. and Chiussi, Stefano and Zaumseil, Peter and Schwartz, Bernhard and Busch, Kurt and Schulze, J.}, title = {Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling}, series = {Physical Review B 94}, volume = {94}, journal = {Physical Review B 94}, number = {24}, doi = {10.1103/PhysRevB.94.245304}, pages = {245304}, language = {en} } @misc{FischerAugelBerkmannetal., author = {Fischer, Inga Anita and Augel, Lion and Berkmann, Fritz and Kawaguchi, Yuma and Schlipf, Jon and Schulze, J{\"o}rg}, title = {Plasmonics-Integrated Ge PIN-Photodetectors}, series = {ECS Transactions}, volume = {93}, journal = {ECS Transactions}, number = {1}, issn = {1938-5862}, doi = {10.1149/09301.0041ecst}, pages = {41 -- 44}, language = {en} } @misc{AugelSchlipfBullertetal., author = {Augel, Lion and Schlipf, Jon and Bullert, Sergej and B{\"u}rzele, Sebastian and Schulze, J{\"o}rg and Fischer, Inga Anita}, title = {Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {11}, issn = {2045-2322}, doi = {10.1038/s41598-021-85012-z}, pages = {9}, abstract = {Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.}, language = {en} } @misc{ElogailBerkmannClausenetal., author = {Elogail, Yasmine and Berkmann, Fritz and Clausen, Caterina J. and Fischer, Inga Anita and H{\"a}nel, Linda A. and Schwarz, Daniel and Schulze, J{\"o}rg}, title = {Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si}, series = {Microelectronics Journal}, volume = {123}, journal = {Microelectronics Journal}, issn = {1879-2391}, doi = {10.1016/j.mejo.2022.105404}, pages = {11}, language = {en} } @misc{FischerBrehmDeSetaetal., author = {Fischer, Inga Anita and Brehm, Moritz and De Seta, Monica and Isella, Giovanni and Paul, Douglas J. and Virgilio, Michele and Capellini, Giovanni}, title = {On-chip infrared photonics with Si-Ge-heterostructures: What is next?}, series = {APL Photonics}, volume = {7}, journal = {APL Photonics}, number = {5}, issn = {2378-0967}, doi = {10.1063/5.0078608}, pages = {050901-1 -- 050901-20}, abstract = {The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform}, language = {en} }