@misc{KoernerSchwarzFischeretal., author = {K{\"o}rner, Roman and Schwarz, Daniel and Fischer, Inga Anita and Augel, Lion and Bechler, Stefan and H{\"a}nel, Linda A. and Kern, Michael and Oehme, Michael and Rolseth, Erlend Granbo and Schwartz, Bernhard and Weißhaupt, David and Zhang, Wogong and Schulze, J{\"o}rg}, title = {The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si}, series = {2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016}, journal = {2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-3901-2}, pages = {22.5.1 -- 22.5.4}, language = {en} } @misc{BochAllanBirkhoferetal., author = {Boch, Steffen and Allan, Eric and Birkhofer, Klaus and Bossdorf, Oliver and Bl{\"u}thgen, Nico and Christ-Breulmann, Sabina and Diek{\"o}tter, Tim and Dormann, Carsten F. and Gossner, Martin M. and Hallmann, Christine and Hemp, Andreas and H{\"o}lzel, Norbert and Jung, Kirsten and Klaus, Valentin H. and Klein, Alexandra M. and Kleinebecker, Till and Lange, Markus and M{\"u}ller, J{\"o}rg and Nacke, Heiko and Prati, Daniel and Renner, Swen C. and Rothenw{\"o}hrer, Christoph and Schall, Peter and Schulze, Ernst-Detlef and Socher, Stephanie A. and Tscharntke, Teja and T{\"u}rke, Manfred and Weiner, Christiane N. and Weisser, Wolfgang W. and Westphal, Catrin and Wolters, Volkmar and Wubet, Tesfaye and Fischer, Markus}, title = {Extensive und j{\"a}hrlich wechselnde Nutzungsintensit{\"a}t f{\"o}rdert den Artenreichtum im Gr{\"u}nland}, series = {ANLIEGEN NATUR}, volume = {38}, journal = {ANLIEGEN NATUR}, number = {1}, issn = {1864-0729}, pages = {86 -- 95}, language = {de} } @misc{SchmidtAhrensFlegeetal., author = {Schmidt, Thomas and Ahrens, Christian and Flege, Jan Ingo and Jaye, Cherno and Fischer, Daniel A. and Falta, Jens}, title = {Growth of Epitaxial 3,4,9,10-Perylene Tetracarboxylic Dianhydride on Bi-Terminated Silicon}, series = {Journal of Physical Chemistry C}, volume = {123}, journal = {Journal of Physical Chemistry C}, number = {12}, issn = {1932-7447}, doi = {10.1021/acs.jpcc.8b10396}, pages = {7097 -- 7109}, abstract = {The epitaxial quality of thin films crucially depends on their interaction with the substrate. Up to now, Ag-terminated Si(111) has been employed as the model substrate for the growth of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on semiconductors. In this study, we will show that Bi termination results in PTCDA films of superior epitaxial quality. We have studied the growth of PTCDA on bismuth-passivated Si(111) in detail by means of spot profile analysis of low-energy electron diffraction (SPA-LEED), X-ray photoemission spectroscopy (XPS), near-edge X-ray absorptionfine structure (NEXAFS), and scanning tunneling microscopy (STM). The XPS results reveal the presence of intact PTCDA molecules on the surface upon adsorption. NEXAFS data indicate the PTCDA molecules being oriented with their molecular plane parallel to the surface. STM shows a very smooth growth front of the PTCDA film, preserving the step structure of the substrate. High-resolution SPA-LEED data demonstrate the presence of a multidomain surface with a rich variety of PTCDA surface structures, which were identified to be most prominently herring-bone polytypes. However, in the monolayer range, quadratic brick-wall structures and a nearly square-like structure as well as a perylene-like structure have also been found. Despite the simultaneous presence of multiple domains, the individual domains show excellent lateral ordering, with larger domain sizes as compared to the case of Ag-terminated Si(111).}, language = {en} } @misc{ElogailBerkmannClausenetal., author = {Elogail, Yasmine and Berkmann, Fritz and Clausen, Caterina J. and Fischer, Inga Anita and H{\"a}nel, Linda A. and Schwarz, Daniel and Schulze, J{\"o}rg}, title = {Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si}, series = {Microelectronics Journal}, volume = {123}, journal = {Microelectronics Journal}, issn = {1879-2391}, doi = {10.1016/j.mejo.2022.105404}, pages = {11}, language = {en} }