@misc{LukosiusLukoseDubeyetal., author = {Lukosius, Mindaugas and Lukose, Rasuolė and Dubey, P. K. and Raju, A. I. and Capista, Daniele and Lisker, Marco and Mai, A. and Wenger, Christian}, title = {Graphene for photonic applications}, series = {2024 47th MIPRO ICT and Electronics Convention (MIPRO)}, journal = {2024 47th MIPRO ICT and Electronics Convention (MIPRO)}, publisher = {IEEE}, isbn = {979-8-3503-8250-1}, issn = {2623-8764}, doi = {10.1109/MIPRO60963.2024.10569652}, pages = {1614 -- 1618}, abstract = {Integrating graphene into Silicon Complementary Metal-Oxide-Semiconductor (CMOS) technology for photonic applications holds immense promise, but it encounters challenges in establishing large-scale graphene processes. These challenges encompass growth through techniques like Chemical Vapor Deposition (CVD), transfer, encapsulation, and contact formation within a routine 200mm wafer pilot line typically utilized for integrated circuit fabrication. This study is dedicated to exploring various facets of graphene research within a 200 mm pilot line, with a focus on overcoming challenges through the fabrication of proof-of-concept photonic graphene-based devices. The synthesis of graphene targeted epi-Ge(100)/Si(100) substrates, grown within the IHP pilot line, showcasing the potential for high-quality graphene deposition across 200mm wafers. Alternatively, employing different orientations such as (110) has been explored to enhance graphene mobility, achieving a remarkable mobility of 2300 cm 2 /Vs at present. The study systematically investigates graphene quality, thickness, and homogeneity utilizing techniques such as Raman spectroscopy, Atomic Force Microscopy (AFM), and Scanning Electron Microscopy (SEM). Additionally, simulations and fabrication of the graphene ring modulators have been conducted at both the component and device levels, incorporating realistic graphene properties. These results indicate a modulation depth of 1.6 dB/μm and a 3dB bandwidth of 7 GHz, showcasing the potential of graphene-based photonic devices for high-speed communication applications.}, language = {en} } @misc{LukosiusLukoseLiskeretal., author = {Lukosius, Mindaugas and Lukose, Rasuolė and Lisker, Marco and Dubey, P. K. and Raju, A. I. and Capista, Daniele and Majnoon, Farnaz and Mai, A. and Wenger, Christian}, title = {Developments of Graphene devices in 200 mm CMOS pilot line}, series = {Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023}, journal = {Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-3546-0}, doi = {10.1109/NMDC57951.2023.10343569}, pages = {505 -- 506}, abstract = {Due to the unique electronic band structure, graphene has opened great potential to extend the functionality of a large variety of devices. Despite the significant progress in the fabrication of various graphene based microelectronic devices, the integration of graphene devices still lack the stability and compatibility with Si-technology processes. Therefore, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance. This study aims to explore various aspects of graphene research on a 200mm pilot line, with a focus on simulations and fabrication of graphene modulator. To be more precise, it includes design and fabrication of the layouts, necessary mask sets, creation of the flows, fabrication, and measurements of the Gr modulators on 200 mm wafers.}, language = {en} }