@misc{LupinaDabrowskiFormaneketal., author = {Lupina, Grzegorz and Dabrowski, Jarek Marek and Formanek, Peter and Schmeißer, Dieter and Sorge, Roland and Wenger, Christian and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations}, series = {Materials Science in Semiconductor Processing}, volume = {7}, journal = {Materials Science in Semiconductor Processing}, number = {4-6}, issn = {1369-8001}, pages = {215 -- 220}, abstract = {We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.}, language = {en} } @misc{MuessigDabrowskiWengeretal., author = {M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek and Wenger, Christian and Lupina, Grzegorz and Sorge, Roland and Formanek, Peter and Zaumseil, Peter and Schmeißer, Dieter}, title = {Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2}, series = {MRS Proceedings}, volume = {811}, journal = {MRS Proceedings}, issn = {1946-4274}, pages = {D7.10.}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Dabrowski, Jaroslaw and Weidner, G{\"u}nter and Zaumseil, Peter and Schmeißer, Dieter and Storck, Peter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 196}, abstract = {For the integration of 100 \% Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.}, language = {en} } @misc{HeinrichBalanzateguiBensetal., author = {Heinrich, Ingo and Balanzategui, Daniel and Bens, Oliver and Blasch, Gerald and Blume, Theresa and B{\"o}ttcher, Falk and Borg, Erik and Brademann, Brian and Brauer, Achim and Conrad, Christopher and Dietze, Elisabeth and Dr{\"a}ger, Nadine and Fiener, Peter and Gerke, Horst H. and G{\"u}ntner, Andreas and Heine, Iris and Helle, Gerhard and Herbrich, Marcus and Harfenmeister, Katharina and Heußner, Karl-Uwe and Hohmann, Christian and Itzerott, Sibylle and Jurasinski, Gerald and Kaiser, Knut and Kappler, Christoph and Koebsch, Franziska and Liebner, Susanne and Lischeid, Gunnar and Merz, Bruno and Missling, Klaus Dieter and Morgner, Markus and Pinkerneil, Sylvia and Plessen, Birgit and Raab, Thomas and Ruhtz, Thomas and Sachs, Torsten and Sommer, Michael and Spengler, Daniel and Stender, Vivien and St{\"u}ve, Peter and Wilken, Florian}, title = {Interdisciplinary Geo-ecological Research across Time Scales in the Northeast German Lowland Observatory (TERENO-NE)}, series = {Vadose Zone Journal}, volume = {17}, journal = {Vadose Zone Journal}, number = {1}, issn = {1539-1663}, doi = {10.2136/vzj2018.06.0116}, pages = {1 -- 25}, language = {en} } @misc{LuetznerLangeSchmittetal., author = {L{\"u}tzner, J{\"o}rg and Lange, Toni and Schmitt, Jochen and Kopkow, Christian and Dreinh{\"o}fer, Karsten E and Friederich, Niklaus F. and Gravius, Sascha and Heller, Karl-Dieter and Hube, Robert and Gromnica-Ihle, Erika and Kirschner, Stephan and Kladny, Bernd and Kremer, Michael and Linke, Maike and Malzahn, J{\"u}rgen and Sabatowski, Rainer and Scharf, Hanns-Peter and St{\"o}ve, Johannes and Wagner, Richard and G{\"u}nther, Klaus-Peter}, title = {[The S2k guideline: Indications for knee endoprosthesis : Evidence and consent-based indications for total knee arthroplasty]}, series = {Der Orthop{\"a}de}, volume = {47}, journal = {Der Orthop{\"a}de}, number = {9}, issn = {1433-0431}, doi = {10.1007/s00132-018-3612-x}, pages = {777 -- 781}, language = {en} } @article{EberhardHuBestle, author = {Eberhard, Peter and Hu, B. and Bestle, Dieter}, title = {Longitudinal Wave Propagation in Multiple Impacted Rods}, language = {en} } @article{BestleEberhard, author = {Bestle, Dieter and Eberhard, Peter}, title = {Optimization of a Contact Surface}, abstract = {Zhe paper introduces ideas from shape optimization to multibody system dynamics. A disk rolling down a given slope is taken as a simple example, for which it is the goal of the optimization to shape the rolling contour of the disk such that it takes a minimum time to cover a certain distance. The shape of the sontour is described by its radius of curvature. The governing equations of motion result from the kinematics of relative motion and the Nowton-Euler formalism. Three different kinds of spirals are defined and optimized.}, language = {en} } @incollection{EberhardBestle, author = {Eberhard, Peter and Bestle, Dieter}, title = {Computer-Aided Optimization of Mechanical Systems}, language = {en} } @inproceedings{DuttaFlassigBestle, author = {Dutta, Amit Kumar and Flassig, Peter Michael and Bestle, Dieter}, title = {Multi-Objective Blade Design using a Quasi-3D Non-Dimensional Parameterization Approach}, language = {en} } @inproceedings{DuttaFlassigBestle, author = {Dutta, Amit Kumar and Flassig, Peter Michael and Bestle, Dieter}, title = {A Non-Dimensional Quasi-3D Blade Design approach with respect to Aerodynamic Criteria}, series = {Proceedings of the ASME Turbo Expo 2008, presented at the 2008 ASME Turbo Expo, June 9 - 13, 2008, Berlin, Germany, Vol 6., Part C}, booktitle = {Proceedings of the ASME Turbo Expo 2008, presented at the 2008 ASME Turbo Expo, June 9 - 13, 2008, Berlin, Germany, Vol 6., Part C}, publisher = {ASME}, address = {New York, NY}, isbn = {978-0-7918-4316-1}, pages = {2445 -- 2455}, language = {en} } @inproceedings{KeskinSwobodaFlassigetal., author = {Keskin, Akin and Swoboda, Marius and Flassig, Peter Michael and Dutta, Amit Kumar and Bestle, Dieter}, title = {Accelerated Industrial Blade Design Based on Multi-Objective Optimization Using Surrogate Model Methodology}, series = {Proceedings of the ASME Turbo Expo 2008, presented at the 2008 ASME Turbo Expo, June 9 - 13, 2008, Berlin, Germany, Vol 6., Part C}, booktitle = {Proceedings of the ASME Turbo Expo 2008, presented at the 2008 ASME Turbo Expo, June 9 - 13, 2008, Berlin, Germany, Vol 6., Part C}, publisher = {ASME}, address = {New York, NY}, isbn = {978-0-7918-4316-1}, pages = {2339 -- 2349}, language = {en} } @inproceedings{FlassigDuttaBestle, author = {Flassig, Peter Michael and Dutta, Amit Kumar and Bestle, Dieter}, title = {Robustheits- und zuverl{\"a}ssigkeitsbasierte Mehrkriterien-Optimierung von Verdichterschaufeln}, language = {de} } @inproceedings{DuttaFlassigBestleetal., author = {Dutta, Amit Kumar and Flassig, Peter Michael and Bestle, Dieter and Keskin, Akin and Swoboda, Marius}, title = {Validierung optimierter Verdichterschaufeln mit Hilfe der 3D-CFD}, series = {Deutscher Luft- und Raumfahrtkongress 2008, Darmstadt, 23. bis 25. September 2008, Bd. 2}, booktitle = {Deutscher Luft- und Raumfahrtkongress 2008, Darmstadt, 23. bis 25. September 2008, Bd. 2}, publisher = {Dt. Ges. f{\"u}r Luft- und Raumfahrt}, address = {Bonn}, pages = {1023 -- 1033}, language = {de} } @inproceedings{FlassigDuttaBestle, author = {Flassig, Peter Michael and Dutta, Amit Kumar and Bestle, Dieter}, title = {Robuste Auslegung von Verdichterschaufeln}, series = {Deutscher Luft- und Raumfahrtkongress 2008, Darmstadt, 23. bis 25. September 2008, Bd. 2}, booktitle = {Deutscher Luft- und Raumfahrtkongress 2008, Darmstadt, 23. bis 25. September 2008, Bd. 2}, publisher = {Dt. Ges. f{\"u}r Luft- und Raumfahrt}, address = {Bonn}, pages = {1001 -- 1010}, language = {de} } @inproceedings{SommerFlassigDuttaetal., author = {Sommer, Lars and Flassig, Peter Michael and Dutta, Amit Kumar and Bestle, Dieter}, title = {Kr{\"u}mmungs-Nebenbedingungen in der aerodynamischen Mehrkriterien-Optimierung von Verdichterschaufelprofilen}, series = {Deutscher Luft- und Raumfahrtkongress 2008, Darmstadt, 23. bis 25. September 2008, Bd. 2}, booktitle = {Deutscher Luft- und Raumfahrtkongress 2008, Darmstadt, 23. bis 25. September 2008, Bd. 2}, publisher = {Dt. Ges. f{\"u}r Luft- und Raumfahrt}, address = {Bonn}, pages = {1011 -- 1022}, language = {de} } @inproceedings{DuttaFlassigBestle, author = {Dutta, Amit Kumar and Flassig, Peter Michael and Bestle, Dieter}, title = {Validation of Q3D-Blade Optimisation Results by 3D-CFD}, language = {en} } @inproceedings{FlassigDuttaBestle, author = {Flassig, Peter Michael and Dutta, Amit Kumar and Bestle, Dieter}, title = {Robustheit und Zuverl{\"a}ssigkeit in der aerodynamischen Verdichterauslegung}, language = {de} } @inproceedings{DuttaFlassigOttoetal., author = {Dutta, Amit Kumar and Flassig, Peter Michael and Otto, Dierk and Bestle, Dieter}, title = {Process Integration for Multidisciplinary Multi-objective Blade Design}, language = {en} } @inproceedings{KeskinSwobodaFlassigetal., author = {Keskin, Akin and Swoboda, Marius and Flassig, Peter Michael and Dutta, Amit Kumar and Bestle, Dieter}, title = {New Optimization Strategy for Rapid industrial Blade Design}, language = {en} } @inproceedings{FlassigBestle, author = {Flassig, Peter Michael and Bestle, Dieter}, title = {Probabilistische Studien zur robusten aerodynamischen Verdichterauslegung}, language = {de} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @inproceedings{FlassigBestle, author = {Flassig, Peter Michael and Bestle, Dieter}, title = {Robust 2D Compressor Blading with respect to Measured Manufacturing Uncertainties}, language = {en} } @inproceedings{BestleFlassig, author = {Bestle, Dieter and Flassig, Peter Michael}, title = {Optimal Aerodynamic Compressor Blade Design Considering Manufacturing Noise}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @inproceedings{GehrlichOhsiekKleinetal., author = {Gehrlich, Lukas and Ohsiek, Susanne and Klein, C. and Geiß, M. and Friedemann, Michael and K{\"u}cher, Peter and Schmeißer, Dieter}, title = {Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements}, series = {2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011}, booktitle = {2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4577-0503-8}, doi = {10.1109/IITC.2011.5940322}, pages = {82 -- 84}, language = {en} } @inproceedings{BestleFlassigDutta, author = {Bestle, Dieter and Flassig, Peter Michael and Dutta, Amit Kumar}, title = {Robust Design of Compressor Blades in the Presence of Manufacturing Noise}, series = {9th European Conference on turbomachinery, fluid dynamics and thermodynamics, Conference Proceedings, Vol. 1}, booktitle = {9th European Conference on turbomachinery, fluid dynamics and thermodynamics, Conference Proceedings, Vol. 1}, editor = {Sen, M.}, isbn = {978-975-561-390-1}, pages = {1303 -- 1314}, language = {en} } @incollection{OsterriederWernerSimon, author = {Osterrieder, Peter and Werner, Dieter and Simon, Marc}, title = {Konzepte der Tragwerksplanung im Kraftwerksbau}, language = {de} } @misc{GerlichOhsiekKleinetal., author = {Gerlich, Lukas and Ohsiek, Susanne and Klein, Christoph and Geiß, Mario and Friedemann, Michael and K{\"u}cher, Peter and Schmeißer, Dieter}, title = {Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growth}, series = {Microelectronic Engineering}, volume = {Vol. 106}, journal = {Microelectronic Engineering}, doi = {10.1016/j.mee.2013.01.017}, pages = {63 -- 68}, abstract = {As a consequence of device shrinking the resistivity of the widely used TaN/Ta double barrier layer becomes an increasingly important parameter for device speed beyond the 32 nm technology node. In this study we describe the optimization of the deposition of TaN/Ta stacks in such a way that tantalum nitride layer thickness is minimized and tantalum grows in the favorable conducting alpha-phase. In the first part of the study we usedin situ ARXPS to investigate the growth of different tantalum nitride layers on SiO2 and SiOCH as a function of deposition time, nitrogen flow and deposition power. In the second part we analyzed the crystalline phase of a 20 nm thick tantalum layer deposited on top of the same series of tantalum nitride layers characterized in the growth study. The main findings are the appearance of tan-talum carbide and tantalum silicide as interface species for the deposition on SiOCH and only tantalum silicide for the deposition on SiO2. We found that alpha-tantalum grows preferably on tantalum carbide and nitrogen rich intermediate layers whereas silicide at the interface promotes the growth of beta-tantalum. To verify these findings we studied two additional modifications of the interface. A lower bias power for a deposition of tantalum nitride on SiO2 was used to confirm the role of tantalum silicide and a thermal treatment of a thin tantalum layer on SiOCH was applied to confirm the role of tantalum carbide. Finally, the contact resistance in via chains on patterned wafers for four selected processes showed the same trends as the sheet resistance of the corresponding barrier films on blanket wafer experiments.}, language = {en} }