@misc{MuessigDabrowskiHinrich, author = {M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek and Hinrich, S.}, title = {Formation of atomically smooth, ultrathin oxides on Si(113)}, series = {Solid state electronics}, volume = {45}, journal = {Solid state electronics}, number = {8}, issn = {0038-1101}, pages = {1219 -- 1231}, language = {en} } @inproceedings{LippertDabrowskiCostinaetal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films}, language = {en} } @misc{TarnawskaDabrowskiGrzelaetal., author = {Tarnawska, Lidia Lupina and Dabrowski, Jarek Marek and Grzela, Tomasz and Niermann, T. and Lehmann, M. and Storck, Peter and Schr{\"o}der, Thomas}, title = {Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {21}, issn = {0021-8979}, pages = {213507 -- 213507}, language = {en} } @misc{DabrowskiLippertAvilaetal., author = {Dabrowski, Jarek Marek and Lippert, Gunther and Avila, J. and Baringhaus, Jens and Colambo, I. and Dedkov, Yu. S. and Herziger, Felix and Lupina, Grzegorz and Maultzsch, J. and Schaffus, T. and Schr{\"o}der, Thomas and Sowinska, Małgorzata and Tegenkamp, Christoph and Vignaud, D. and Asensio, Maria Carmen}, title = {Understanding the growth mechanism of graphene on Ge/Si(001) surfaces}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {6}, issn = {2045-2322}, doi = {10.1038/srep31639}, pages = {Art. 31639}, language = {en} } @misc{LukosiusLippertDabrowskietal., author = {Lukosius, Mindaugas and Lippert, Gunther and Dabrowski, Jarek Marek and Kitzmann, Julia and Lisker, Marco and Kulse, Philipp and Kr{\"u}ger, Andreas and Fursenko, Oksana and Costina, Ioan and Trusch, Andreas and Yamamoto, Yuji and Wolff, Andre and Mai, Andreas and Schr{\"o}der, Thomas}, title = {Graphene Synthesis and Processing on Ge Substrates}, series = {ECS transactions}, volume = {75}, journal = {ECS transactions}, number = {8}, issn = {1938-6737}, doi = {10.1149/07508.0533ecst}, pages = {533 -- 540}, language = {en} } @misc{LukosiusDabrowskiLiskeretal., author = {Lukosius, Mindaugas and Dabrowski, Jarek Marek and Lisker, Marco and Kitzmann, Julia and Schulze, Sebastian and Lippert, Gunther and Fursenko, Oksana and Yamamoto, Yuji and Schubert, Markus Andreas and Krause, Hans-Michael and Wolff, Andre and Mai, A. and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {49}, issn = {1944-8244}, doi = {10.1021/acsami.6b11397}, pages = {33786 -- 33793}, language = {en} } @inproceedings{DudekLupinaKozłowskietal., author = {Dudek, Peter and Lupina, Grzegorz and Kozłowski, Grzegorz and Dabrowski, Jarek Marek and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schmeißer, Dieter and Schroeder, Thomas}, title = {Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 232}, abstract = {Ultra thin dielectric films (<20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10-8 A/cm2) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO2 - based alkaline earth perovskite - BaHfO3 with subsequent admixture of TiO2, resulting in formation of BaHf0.5Ti0.5O3 compound. The analysis of data indicates that band gap for HfO2 is similar to BaHfO3 and amounts 5.8 eV; for BaHf0.5Ti0.5O3 it decreases to 3.8 eV. We conclude that the addition of TiO2 to BaHfO3 increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior.}, language = {en} } @misc{SchmeisserMuellerSeifarthetal., author = {Schmeißer, Dieter and M{\"u}ller, S. and Seifarth, Olaf and Dabrowski, Jarek Marek and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)}, series = {Journal of vacuum science \& technology / B}, volume = {27}, journal = {Journal of vacuum science \& technology / B}, number = {1}, pages = {271 -- 276}, language = {en} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @inproceedings{MuessigDabrowskiSchmeisser, author = {M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek and Schmeißer, Dieter}, title = {Interface Characterization of the High-k Gate Dielectric Pr2O3}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Pr2O3 is currently under consideration as a potential alternative gate dielectric candidate for sub-0.1 µm Complementary Metal Oxide Semiconductor (CMOS) technology. For all thin gate dielectrics, the interface with silicon plays a key role, and in most cases is a dominant factor in determining overall electrical properties. We studied the Pr2O3/Si(001) interface by a non-destructive depth profiling using synchrotron radiation photo-electron spectroscopy and ab initio calculations. Our results provide evidence that a chemical reactive interface exists consisting of a mixed Si-Pr oxide such as (Pr2O3)x(SiO2)1-x, typically in non-stoichiometric composition. There is no formation of neither an interfacial SiO2 nor interfacial silicide: all Si-Pr bonds are oxidized and all SiO4 units dissolve in the Pr oxide. Interfacial silicates like (Pr2O3)x(SiO2)1-x are promising high-k dielectric materials because they represent incremental modification of SiO2 films by Pr ions so that the interface characteristics can be similar to Si-SiO2 interface properties. Under ultrahigh vacuum conditions, silicide formation is observed when the silicate film is heated above 800∘C. The praseodymium silicate system observed at the interface between Si(001) and Pr2O3 offers greater flexibility towards integration of Pr2O3 into future CMOS technologies.}, language = {en} } @inproceedings{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Ti-doping of Pr silicate layers for high-k dielectrics applications}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states.}, language = {en} } @article{LupinaSchroederSchmeisseretal., author = {Lupina, Grzegorz and Schroeder, Thomas and Schmeißer, Dieter and Dabrowski, Jarek Marek}, title = {Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization}, language = {en} } @misc{SchmeisserMuessigDabrowski, author = {Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek}, title = {Silicate Layer Formation at the Pr2O3 / Si(001) Interfaces}, series = {Applied Physics Letters}, volume = {85}, journal = {Applied Physics Letters}, number = {1}, issn = {1077-3118}, pages = {88 -- 90}, abstract = {We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1\%D710-8 mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies.}, language = {en} } @misc{LupinaDabrowskiFormaneketal., author = {Lupina, Grzegorz and Dabrowski, Jarek Marek and Formanek, Peter and Schmeißer, Dieter and Sorge, Roland and Wenger, Christian and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations}, series = {Materials Science in Semiconductor Processing}, volume = {7}, journal = {Materials Science in Semiconductor Processing}, number = {4-6}, issn = {1369-8001}, pages = {215 -- 220}, abstract = {We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.}, language = {en} } @misc{MuessigDabrowskiWengeretal., author = {M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek and Wenger, Christian and Lupina, Grzegorz and Sorge, Roland and Formanek, Peter and Zaumseil, Peter and Schmeißer, Dieter}, title = {Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2}, series = {MRS Proceedings}, volume = {811}, journal = {MRS Proceedings}, issn = {1946-4274}, pages = {D7.10.}, language = {en} } @misc{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Praseodymium silicate layers with atomically abrupt interface on Si(100)}, series = {Applied Physics Letters}, volume = {87}, journal = {Applied Physics Letters}, number = {5}, issn = {0003-6951}, pages = {S. 092901}, language = {en} } @misc{DudekLupinaKozłowskietal., author = {Dudek, Piotr T. and Lupina, Grzegorz and Kozłowski, Grzegorz and Zaumseil, Peter and Bauer, Jakob and Fursenko, Oksana and Dabrowski, Jarek Marek and Schmidt, R. and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schr{\"o}der, Thomas and Schmeißer, Dieter and Zschech, Ehrenfried}, title = {Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3}, series = {Journal of Vacuum Science and Technology / B}, volume = {29}, journal = {Journal of Vacuum Science and Technology / B}, number = {1}, issn = {2166-2754}, language = {en} } @misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{LippertDabrowskiOberbecketal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Oberbeck, Lars and Schroeder, Uwe and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films}, series = {Journal of the electrochemical society}, volume = {155}, journal = {Journal of the electrochemical society}, number = {5}, issn = {1945-7111}, doi = {10.1149/1.2875741}, pages = {G97 -- G114}, language = {en} } @misc{SanaTetznerDabrowskietal., author = {Sana, Prabha and Tetzner, Henriette and Dabrowski, Jarek Marek and Tarnawska, Lidia Lupina and Costina, Ioan and Thapa, Sarad and Storck, Peter and Schr{\"o}der, Thomas and Z{\"o}llner, Marvin Hartwig}, title = {Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4963826}, pages = {135103}, language = {en} }