@misc{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann}, isbn = {3-86537-328-3}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Direct Extraction of HBT Equivalent Circuit Elements}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency}, series = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, booktitle = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {0-7803-5135-5}, pages = {741 -- 744}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {On the Gunn Effect in GaAs HBTs}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Lenk, Friedrich}, title = {Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, pages = {1967 -- 1970}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {997 -- 1000}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs}, language = {en} } @article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} } @article{RudolphMelianiDoerneretal., author = {Rudolph, Matthias and Meliani, Chafik and D{\"o}rner, Ralf and Heinrich, Wolfgang}, title = {Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal Modeling of High-Voltage GaAs Power HBTs}, language = {en} } @inproceedings{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {New Algorithm for Extraction of FET Noise Model Parameters}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {New GaInP/GaAs-HBT Large-Signal Model for Power Applications}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Richter, E.}, title = {Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {A Universal Measurement System for Microwave Power Transistors}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer}, language = {en} } @inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @article{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {An HBT Noise Model Valid up to Transit Frequency}, language = {en} } @article{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter and Prinzler, H. and B{\"o}ck, Georg}, title = {Experimental Evaluation of Microwave Field-EffectTransistor Noise Models}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Harmonic Tuning of Power Transistors by Active Load-Pull Measurement}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Beilenhoff, K.}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, R. and Klapproth, L. and B{\"o}ck, Georg}, title = {Direct Extraction of FET Noise Models from Noise Figure Measurements}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, R. and Beilenhoff, K.}, title = {Unified Model for Collector Charge in Heterojunction Bipolar Transistors}, language = {en} } @article{RudolphSheinmanWasigeetal., author = {Rudolph, Matthias and Sheinman, B. and Wasige, E. and D{\"o}rner, Ralf and Sidorov, V. and Cohen, S. and Ritter, Dan}, title = {A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors}, language = {en} } @article{RudolphBeilenhoffDoerneretal., author = {Rudolph, Matthias and Beilenhoff, K. and D{\"o}rner, Ralf and Heymann, Peter}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @inproceedings{LenkDoernerRumiantsevetal., author = {Lenk, Friedrich and D{\"o}rner, Ralf and Rumiantsev, Andrej and Rudolph, Matthias}, title = {Calibration Residual Error Propagation Analysis Using Conformal Mapping}, series = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, booktitle = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {978-1-61284-959-1}, pages = {Paper 2-4}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @inproceedings{RumiantsevDoernerLenk, author = {Rumiantsev, Andrej and D{\"o}rner, Ralf and Lenk, Friedrich}, title = {Impact of in-situ TRL reference impedance determination on parameter extraction}, series = {Microwave Conference (EuMC), 2012 42nd European, Amsterdam, Netherlands, 29 October - 1 November 2012}, booktitle = {Microwave Conference (EuMC), 2012 42nd European, Amsterdam, Netherlands, 29 October - 1 November 2012}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2215-7}, pages = {593 -- 596}, abstract = {This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe:C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5\%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified.}, language = {en} } @inproceedings{LenkDoerner, author = {Lenk, Friedrich and D{\"o}rner, Ralf}, title = {New extraction method for FET extrinsic capacitances using active bias conditions}, series = {IEEE MTT-S International Microwave Symposium digest, June 7 - 12, 1998, Baltimore Convention Center, Baltimore, Maryland}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 7 - 12, 1998, Baltimore Convention Center, Baltimore, Maryland}, publisher = {IEEE Publication}, address = {Piscataway, NJ}, isbn = {0-7803-4471-5}, doi = {10.1109/MWSYM.1998.689374}, pages = {279 -- 282}, abstract = {A new procedure for extracting the extrinsic capacitances of FETs is presented. It requires measurements only in the active bias regime. The method utilizes the symmetry of the intrinsic FET in the forward and reverse biased operating regime. The extraction is performed analytically and does not require any optimization.}, language = {en} } @inproceedings{LenkDoerner, author = {Lenk, Friedrich and D{\"o}rner, Ralf}, title = {Improved parameter extraction of small-sized FETs for low-power applications}, series = {2000 IEEE MTT-S International Microwave Symposium digest, June 11 - 16, 2000, Hynes Convention Center, Boston, Massachusetts, vol. 3}, booktitle = {2000 IEEE MTT-S International Microwave Symposium digest, June 11 - 16, 2000, Hynes Convention Center, Boston, Massachusetts, vol. 3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-5687-X}, doi = {10.1109/MWSYM.2000.862233}, pages = {1389 -- 1392}, abstract = {In low-power applications FETs with small gate width are required. For such devices common extraction methods fail. In particular, extracting source inductance and drain pad capacitance using "cold"-FET measurements is no longer possible. We present an improved method that allows reliable extraction of extrinsic elements for small-sized FETs.}, language = {en} } @inproceedings{LenkDoerner, author = {Lenk, Friedrich and D{\"o}rner, Ralf}, title = {A new multiport measurement-method using a two-port network analyzer}, series = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, booktitle = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8845-3}, doi = {10.1109/MWSYM.2005.1517031}, abstract = {A new method is presented how to characterize multiport devices using a two-port vector network-analyzer (VNA). Up to now, at least one of the port terminations had to be fully known to measure the S-parameters of the device. Our new measurement method overcomes this restriction. All of the device parameters and all of the port terminations are calculated from the device measurements.}, language = {en} } @inproceedings{BerndtMroskDoerneretal., author = {Berndt, Sebastian and Mrosk, Till and D{\"o}rner, Ralf and Lenk, Friedrich}, title = {Residual errors in coplanar on-chip 1-port calibration caused by standard deviations}, series = {Microwave Measurement Conference (ARFTG), 2013 81st ARFTG, Seattle, Washington, USA, 7 June 2013}, booktitle = {Microwave Measurement Conference (ARFTG), 2013 81st ARFTG, Seattle, Washington, USA, 7 June 2013}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4981-9}, doi = {10.1109/ARFTG.2013.6579054}, pages = {141 -- 144}, abstract = {The uncertainty calculation for on-wafer 1-port S-Parameter measurements due to the uncertainty of coplanar on-chip calibration standards is presented. Analytical expressions for the sensitivities are used and applied for typical fabrication tolerances of monolithic integrated on-chip structures. The method is verified for OSM calibration by means of simulations with a commercial calibration software as well as by measurements, where test-structures with artificial errors were used. In each case the analytically calculated deviation is compared to a numerical approach and good agreement is found. All results are given for a MMIC process on GaAs, but can be adopted for other technologies.}, language = {en} } @inproceedings{LenkDoernerKurpasetal., author = {Lenk, Friedrich and D{\"o}rner, Ralf and Kurpas, Paul and Rumiantsev, Andrej}, title = {Measurement uncertainties due to non-ideal calibration standards for unknown thru calibration}, series = {Microwave Measurement Conference (ARFTG), 2013 81st ARFTG}, booktitle = {Microwave Measurement Conference (ARFTG), 2013 81st ARFTG}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4981-9}, doi = {10.1109/ARFTG.2013.6579057}, pages = {1 -- 4}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Towards a Large-Signal Noise Model for GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, pages = {484 -- 487}, language = {en} } @misc{RumiantsevDoerner, author = {Rumiantsev, Andrej and D{\"o}rner, Ralf}, title = {RF Probe Technology: History and Selected Topics}, series = {IEEE microwave magazine}, volume = {14}, journal = {IEEE microwave magazine}, number = {7}, doi = {10.1109/MMM.2013.2280241}, pages = {46 -- 58}, language = {en} } @misc{LenkDoernerRumiantsev, author = {Lenk, Friedrich and D{\"o}rner, Ralf and Rumiantsev, Andrej}, title = {Sensitivity Analysis of S-Parameter Measurements Due to Calibration Standards Uncertainty}, series = {IEEE Transactions on Microwave Theory and Techniques}, volume = {61}, journal = {IEEE Transactions on Microwave Theory and Techniques}, number = {10}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2279774}, pages = {3800 -- 3807}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices}, series = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, booktitle = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, publisher = {VDE-Verl.}, address = {Berlin [u.a.]}, isbn = {978-3-8007-3585-3}, pages = {4}, language = {en} } @inproceedings{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {GaN HEMT Noise Model Performance under Nonlinear Operation}, series = {Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC)}, booktitle = {Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC)}, publisher = {IEEE}, doi = {10.1109/EuMIC.2014.6997895}, pages = {472 -- 475}, language = {en} } @inproceedings{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {GaN HEMT Noise Model Performance under Nonlinear Operation}, series = {Proceedings, 44th European Microwave Conference}, booktitle = {Proceedings, 44th European Microwave Conference}, publisher = {IEEE}, isbn = {978-2-87487-035-4}, doi = {10.1109/EuMC.2014.6986711}, pages = {1416 -- 1419}, language = {en} } @misc{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {Modeling Nonlinear White Noise in GaN HEMT Devices}, series = {Frequenz}, volume = {69}, journal = {Frequenz}, number = {1-2}, pages = {47 -- 55}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive}, series = {Proceedings of 45th European Microwave Conference, Paris 2015}, booktitle = {Proceedings of 45th European Microwave Conference, Paris 2015}, publisher = {IEEE}, doi = {10.1109/EuMC.2015.7345742}, pages = {231 -- 234}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications}, series = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, publisher = {IEEE}, doi = {10.1109/MWSYM.2015.7166766}, pages = {4}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Noise modeling of transferred-substrate InP-DHBTs}, series = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, booktitle = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-3169-0}, doi = {10.1109/COMCAS.2017.8244768}, pages = {1 -- 4}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} }