@misc{AdelmannSchramChewetal., author = {Adelmann, Christoph and Schram, Tom and Chew, Soon Aik and Woicik, J. C. and Brizzi, Simone and Tallarida, Massimo and Schmeißer, Dieter and Horiguchi, Naoto and Elshocht, Sven van and Ragnarsson, Lars-{\AA}ke}, title = {On the scalability of doped hafnia thin films}, series = {Applied Physics Letters}, journal = {Applied Physics Letters}, number = {104}, issn = {0003-6951}, doi = {10.1063/1.4870075}, pages = {122906-1 -- 122906-4}, abstract = {The scaling behavior of Gd- and Al-doped HfO2 films as gate dielectrics in metal-oxide-semiconductor (MOS) capacitors was studied. For equivalent oxide thicknesses (EOTs) in the range of 10 {\AA}, crystallized Gd:HfO2 showed higher leakage current densities than crystallized Al:HfO2, with undoped HfO2 in between. Ultimately, the scalability of Al:HfO2 was limited by the ability to crystallize the films at a given thermal budget. As a result, for post-deposition annealing at 800 °C, the EOT of Al:HfO2 based MOS capacitors was limited to ∼8 {\AA}. However, for such an EOT, leakage current densities were reduced by about 100× with respect to HfO2. This demonstrates the high potential of Al:HfO2 for low-standby-power MOS devices.}, language = {en} }