@inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang and Meliani, Chafik}, title = {A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology}, language = {en} } @inproceedings{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{SchottLenkMelianietal., author = {Schott, Matthias and Lenk, Friedrich and Meliani, Chafik and Heinrich, Wolfgang}, title = {Low phase noise X-band push-push oscillator with frequency divider}, series = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, booktitle = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8845-3}, doi = {10.1109/MWSYM.2005.1516986}, abstract = {A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4\%.}, language = {en} } @inproceedings{MelianiLenkHeinrich, author = {Meliani, Chafik and Lenk, Friedrich and Heinrich, Wolfgang}, title = {24 GHz Low Power VCOs and Analog Frequency Dividers}, series = {IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA}, booktitle = {IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-9541-7}, doi = {10.1109/MWSYM.2006.249744}, pages = {1801 -- 1804}, abstract = {24 GHz VCOs and frequency dividers with very low power consumption are presented. The circuits are realized as GaAs HBT MMICs. They comprise a VCO with high efficiency >17\% and 12\% tuning range at only 18 mW DC consumption as well as several frequency dividers. In order to minimize power consumption, the latter use the injection-locked frequency-divider (ILFD) concept. Divider ratios of 2 and 4 are realized, power consumption as low as 25 mW for a divider-by-2 is achieved. This demonstrates the capabilities of the analog concept in realizing dividers for mm-wave frequencies at DC consumption levels far below their digital counterparts}, language = {en} } @misc{RudolphMelianiKurpasetal., author = {Rudolph, Matthias and Meliani, Chafik and Kurpas, Paul and Schmidt, L. and Rheinfelder, C. N. and Heinrich, Wolfgang}, title = {A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65\% PAE}, language = {en} } @misc{KraemerMelianiLenketal., author = {Kraemer, Thorsten and Meliani, Chafik and Lenk, Friedrich and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers}, series = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, journal = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, isbn = {978-1-4244-2258-6}, doi = {10.1109/ICIPRM.2008.4702999}, pages = {1 -- 3}, abstract = {We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.}, language = {en} } @article{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study}, language = {en} } @article{RudolphMelianiDoerneretal., author = {Rudolph, Matthias and Meliani, Chafik and D{\"o}rner, Ralf and Heinrich, Wolfgang}, title = {Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio}, language = {en} } @article{RudolphMeliani, author = {Rudolph, Matthias and Meliani, Chafik}, title = {On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals}, language = {en} }