@misc{SalvalaglioBergamaschiniIsaetal., author = {Salvalaglio, Marco and Bergamaschini, Roberto and Isa, Fabio and Scaccabarozi, Andrea and Isella, Giovanni and Backofen, Rainer and Voigt, Axel and Montalenti, Francesco and Capellini, Giovanni and Marzegalli, Anna and Schroeder, Thomas and K{\"a}nel, Hans von and Miglio, Leo}, title = {Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.5b05054}, pages = {19219 -- 19225}, language = {en} } @misc{FischerBrehmDeSetaetal., author = {Fischer, Inga Anita and Brehm, Moritz and De Seta, Monica and Isella, Giovanni and Paul, Douglas J. and Virgilio, Michele and Capellini, Giovanni}, title = {On-chip infrared photonics with Si-Ge-heterostructures: What is next?}, series = {APL Photonics}, volume = {7}, journal = {APL Photonics}, number = {5}, issn = {2378-0967}, doi = {10.1063/5.0078608}, pages = {050901-1 -- 050901-20}, abstract = {The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{VirgilioManganelliGrossoetal., author = {Virgilio, Michele and Manganelli, Constanza Lucia and Grosso, G. and Schroeder, Thomas and Capellini, Giovanni}, title = {Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers}, series = {Journal of Applied Physics}, volume = {114}, journal = {Journal of Applied Physics}, number = {24}, issn = {0021-8979}, pages = {243102 -- 243102-11}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{VirgilioWitzigmannBologninietal., author = {Virgilio, Michele and Witzigmann, Bernd and Bolognini, Gabriele and Guha, Subhajit and Schr{\"o}der, Thomas and Capellini, Giovanni}, title = {CMOS-compatible, modulator concept based on strain-induced refractive-index modulation}, series = {Optics Express}, volume = {23}, journal = {Optics Express}, number = {5}, issn = {1094-4087}, doi = {10.1364/OE.23.005930}, pages = {5930 -- 5940}, language = {en} } @misc{KoczorowskiGrzelaRadnyetal., author = {Koczorowski, Wojciech and Grzela, Tomasz and Radny, M. W. and Schofield, S. R. and Capellini, Giovanni and Czajka, Ryszard and Schr{\"o}der, Thomas and Curson, Neil J.}, title = {Ba termination of Ge(001) studied with STM}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {15}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/15/155701}, pages = {155701}, language = {en} } @misc{PeschkaThomasGlitzkyetal., author = {Peschka, Dirk and Thomas, Marc and Glitzky, Annegret and N{\"u}rnberg, Reiner and G{\"a}rtner, Klaus and Virgilio, Michele and Guha, Shekhar and Schr{\"o}der, Thomas and Capellini, Giovanni and Koprucki, Thomas}, title = {Modeling of edge-emitting lasers based on tensile strained Germanium microstripes}, series = {IEEE Photonics Journal}, volume = {7}, journal = {IEEE Photonics Journal}, number = {3}, issn = {1943-0655}, doi = {10.1109/JPHOT.2015.2427093}, language = {en} } @misc{TarnawskaZoellnerNiermannetal., author = {Tarnawska, Lidia Lupina and Z{\"o}llner, Marvin H. and Niermann, T. and Dietrich, Burkhart and Capellini, Giovanni and Thapa, Sarad and H{\"a}berlen, Maik and Lehmann, M. and Storck, Peter and Schr{\"o}der, Thomas}, title = {Zero Lattice Mismatch and Truly Single Crystalline ScN Buffer Layers for GaN Growth on Silicon}, series = {Applied Physics Letters}, volume = {107}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4935856}, pages = {201907}, language = {en} } @misc{VirgilioSchroederYamamotoetal., author = {Virgilio, Michele and Schr{\"o}der, Thomas and Yamamoto, Yuji and Capellini, Giovanni}, title = {Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling}, series = {Journal of Applied Physics}, volume = {118}, journal = {Journal of Applied Physics}, number = {23}, issn = {1089-7550}, doi = {10.1063/1.4938026}, pages = {233110}, language = {en} } @misc{NiuCapelliniLupinaetal., author = {Niu, Gang and Capellini, Giovanni and Lupina, Grzegorz and Niermann, Tore and Salvalaglio, Marco and Marzegalli, Anna and Schubert, Markus Andreas and Zaumseil, Peter and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Montalenti, Francesco and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {3}, issn = {1944-8252}, pages = {2017 -- 2026}, language = {en} } @misc{PeschkaThomasGlitzkyetal., author = {Peschka, Dirk and Thomas, Marita and Glitzky, Annegret and N{\"u}rnberg, Reiner and Virgilio, Michele and Guha, Subhajit and Schr{\"o}der, Thomas and Capellini, Giovanni and Koprucki, Thomas}, title = {Robustness analysis of a device concept for edge-emitting lasers based on strained Germanium}, series = {Optical and Quantum Electronics}, volume = {48}, journal = {Optical and Quantum Electronics}, number = {2, Article 156}, issn = {1572-817X}, pages = {7}, language = {en} } @misc{ZaumseilSchubertYamamotoetal., author = {Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Skibitzki, Oliver and Capellini, Giovanni and Schr{\"o}der, Thomas}, title = {Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.242.402}, pages = {402 -- 407}, language = {en} } @misc{TaokaCapelliniDrieschetal., author = {Taoka, Noriyuki and Capellini, Giovanni and Driesch, Nils von den and Buca, Dan and Zaumseil, Peter and Schubert, Markus Andreas and Klesse, Wolfgang Matthias and Montanari, Michele and Schr{\"o}der, Thomas}, title = {Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer}, series = {Applied Physics Express}, volume = {9}, journal = {Applied Physics Express}, number = {3}, issn = {1882-0786}, doi = {10.7567/APEX.9.031201}, pages = {031201}, language = {en} } @misc{NiuCapelliniSchubertetal., author = {Niu, Gang and Capellini, Giovanni and Schubert, Markus Andreas and Niermann, Tore and Zaumseil, Peter and Katzer, Jens and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Xie, Ya-Hong and K{\"a}nel, Hans von and Schr{\"o}der, Thomas}, title = {Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers}, series = {Scientific Reports}, volume = {6}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/srep22709}, pages = {22709}, language = {en} } @misc{NiuCapelliniHatamietal., author = {Niu, Gang and Capellini, Giovanni and Hatami, Fariba and Bartolomeo, Antonio di and Niermann, Tore and Hameed, Hussein Emad and Schubert, Markus Andreas and Krause, Hans-Michael and Zaumseil, Peter and Skibitzki, Oliver and Masselink, William T. and Lehmann, Michael and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {40}, issn = {1944-8244}, doi = {10.1021/acsami.6b09592}, pages = {26948 -- 26955}, language = {en} } @misc{SkibitzkiCapelliniYamamotoetal., author = {Skibitzki, Oliver and Capellini, Giovanni and Yamamoto, Yuji and Zaumseil, Peter and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Ballabio, Andrea and Bergamaschini, Roberto and Salvalaglio, Marco and Miglio, Leo and Montalenti, Francesco}, title = {RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {39}, issn = {1944-8244}, doi = {10.1021/acsami.6b07694}, pages = {26374 -- 26380}, language = {en} } @misc{SchlykowKlesseNiuetal., author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas}, title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4967500}, pages = {202102}, language = {en} } @misc{GrzelaCapelliniKoczorowskietal., author = {Grzela, Tomasz and Capellini, Giovanni and Koczorowski, Wojciech and Schubert, Markus Andreas and Czajka, Ryszard and Curson, Neil J. and Heidmann, Inga and Schmidt, Thomas and Falta, Jens and Schr{\"o}der, Thomas}, title = {Growth and evolution of nickel - germanide nanonstructures on Ge(001)}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {38}, issn = {1361-6528}, pages = {385701}, language = {en} } @misc{WendavFischerVirgilioetal., author = {Wendav, Torsten and Fischer, Inga Anita and Virgilio, Michele and Capellini, Giovanni and Oliveira, F. and Cerqueira, M. F. and Benedetti, A. and Chiussi, Stefano and Zaumseil, Peter and Schwartz, Bernhard and Busch, Kurt and Schulze, J.}, title = {Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling}, series = {Physical Review B 94}, volume = {94}, journal = {Physical Review B 94}, number = {24}, doi = {10.1103/PhysRevB.94.245304}, pages = {245304}, language = {en} } @misc{SchlykowManganelliRoemeretal., author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita}, title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas}, series = {Nanotechnology}, volume = {31}, journal = {Nanotechnology}, number = {34}, issn = {1361-6528}, doi = {10.1088/1361-6528/ab91ef}, pages = {11}, language = {en} } @misc{FischerClausenSchwarzetal., author = {Fischer, Inga Anita and Clausen, Caterina J. and Schwarz, Daniel and Zaumseil, Peter and Capellini, Giovanni and Virgilio, Michele and da Silva Figueira, Maria Cecilia and Birner, Stefan and Koelling, Sebastian and Koenraad, Paul M. and Huang, Michael R. S. and Koch, Christoph T. and Wendav, Torsten and Busch, Kurt and Schulze, J{\"o}rg}, title = {Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells}, series = {Physical Review Materials}, volume = {4}, journal = {Physical Review Materials}, number = {2}, issn = {2475-9953}, doi = {10.1103/PhysRevMaterials.4.024601}, pages = {10}, language = {en} } @misc{SchlipfTetznerSpiritoetal., author = {Schlipf, Jon and Tetzner, Henriette and Spirito, Davide and Manganelli, Constanza Lucia and Capellini, Giovanni and Huang, Michael R. S. and Koch, Christoph T. and Clausen, Caterina J. and Elsayed, Ahmed and Schulze, J{\"o}rg and Fischer, Inga Anita}, title = {Raman shifts in MBE-grown SixGe1 - x - ySny alloys with large Si content}, series = {Journal of Raman Spectroscopy}, journal = {Journal of Raman Spectroscopy}, issn = {1097-4555}, doi = {10.1002/jrs.6098}, pages = {9}, language = {en} } @misc{TetznerSeifertSkibitzkietal., author = {Tetzner, Henriette and Seifert, W. and Skibitzki, Oliver and Yamamoto, Yuji and Lisker, Marco and Mirza, M. M. and Fischer, Inga Anita and Paul, Douglas J. and De Seta, Monica and Capellini, Giovanni}, title = {Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)}, series = {Applied Physics Letter}, volume = {122}, journal = {Applied Physics Letter}, number = {24}, issn = {1077-3118}, doi = {10.1063/5.0152962}, language = {en} } @misc{HayatSpiritoCorleyWiciaketal., author = {Hayat, Ahsan and Spirito, Davide and Corley-Wiciak, Agnieszka Anna and Schubert, Markus Andreas and Masood, Maria and Reichmann, Felix and Ratzke, Markus and Capellini, Giovanni and Fischer, Inga Anita}, title = {MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates}, series = {Materials Science in Semiconductor Processing}, volume = {165}, journal = {Materials Science in Semiconductor Processing}, issn = {1873-4081}, doi = {10.1016/j.mssp.2023.107693}, language = {en} } @misc{TetznerFischerSkibitzkietal., author = {Tetzner, Henriette and Fischer, Inga Anita and Skibitzki, Oliver and Mirza, M. M. and Manganelli, Constanza Lucia and Luongo, G. and Spirito, Davide and Douglas, J. P. and De Seta, Monica and Capellini, Giovanni}, title = {Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)}, series = {Applied Physics Letters}, volume = {119}, journal = {Applied Physics Letters}, number = {15}, issn = {1077-3118}, doi = {10.1063/5.0064477}, language = {en} } @misc{ChahineZoellnerRichardetal., author = {Chahine, Gilbert A. and Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Subhajit, G. and Zaumseil, Peter and Capellini, Giovanni and Schroeder, Thomas and Sch{\"u}lli, Tobias U.}, title = {Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4909529}, pages = {071902-1 -- 071902-4}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, M. and Capellini, Giovanni and Skibitzki, Oliver and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas}, title = {Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/35/355707}, pages = {355707}, language = {en} } @misc{CapelliniKozłowskiYamamotoetal., author = {Capellini, Giovanni and Kozłowski, Grzegorz and Yamamoto, Yuji and Lisker, Marco and Tillack, Bernd and Ghrib, A. and Kersauson, M. de and El Kurdi, M. and Boucaud, P. and Schroeder, Thomas}, title = {Tensile strained Ge layers obtained via Si-CMOS compatible approach}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {1}, pages = {013513-1 -- 013513-6}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} } @misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} }