@misc{LangeErnstTeubneretal., author = {Lange, Felix and Ernst, Owen C. and Teubner, Thomas and Richter, Carsten and Schmidbauer, Martin and Skibitzki, Oliver and Schroeder, Thomas and Schmidt, Peer and Boeck, Torsten}, title = {In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates}, series = {Nano Futures}, volume = {4}, journal = {Nano Futures}, number = {3}, issn = {2399-1984}, doi = {10.1088/2399-1984/ab82a0}, pages = {1 -- 8}, abstract = {Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm-2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si-Au droplets with SixGe1-x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.}, language = {en} } @misc{VossZahediAzadErnstetal., author = {Voss, Heike and Zahedi-Azad, Setareh and Ernst, Owen C. and Lucaßen, Jan and Mann, Guido and Bonse, J{\"o}rn and Boeck, Torsten and Martin, Jens and Schmid, Martina and Kr{\"u}ger, J{\"o}rg}, title = {Chemical vapor deposition of indium precursors for solar micro-absorbers using continuous laser radiation}, series = {Applied physics. A, Materials science \& processing}, volume = {131}, journal = {Applied physics. A, Materials science \& processing}, publisher = {Springer}, address = {Berlin ; Heidelberg}, issn = {1432-0630}, doi = {10.1007/s00339-025-08895-z}, pages = {1 -- 10}, abstract = {Localized deposition of indium on an amorphous glass surface covered with a thin molybdenum layer is demonstrated utilizing laser-assisted chemical vapor deposition. A continuous-wave laser causes a temperature rise on the molybdenum layer resulting in the selective aggregation of liquid and ultimately crystalline structures of indium. The formation sites of the indium are determined by the decomposition of gaseous trimethylindium. The deposited indium islands can serve as precursors and could be further processed into compound semiconductors like CuInSe2 for micro-concentrator solar cells. The experimental investigations were supported by theoretical simulations of the laser heating process to calculate the local temperature distribution on the surface of the molybdenum-covered glass substrate.}, language = {en} }