@inproceedings{RudolphBengtssonBentetal., author = {Rudolph, Matthias and Bengtsson, Olof and Bent, G. van der and Heinigen, M. van and Vliet, F. F. van}, title = {GaN-HEMT VSWR Ruggedness and Amplifier Protection}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive}, series = {Proceedings of 45th European Microwave Conference, Paris 2015}, booktitle = {Proceedings of 45th European Microwave Conference, Paris 2015}, publisher = {IEEE}, doi = {10.1109/EuMC.2015.7345742}, pages = {231 -- 234}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications}, series = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, publisher = {IEEE}, doi = {10.1109/MWSYM.2015.7166766}, pages = {4}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, booktitle = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-7-0}, doi = {10.1109/GEMIC.2016.7461650}, pages = {441 -- 444}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-6360-4}, doi = {10.1109/MWSYM.2017.8059085}, pages = {240 -- 243}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} }