@inproceedings{RietigAcker, author = {Rietig, Anja and Acker, J{\"o}rg}, title = {A new and fast method for determination of boron, phosphorus and other trace elements in metallurgical grade silicon}, series = {Silicon for the Chemical and Solar Industry XIII, Kristiansand, 2016}, booktitle = {Silicon for the Chemical and Solar Industry XIII, Kristiansand, 2016}, editor = {Nygaard, Lars and Pachaly, Bernd and Page, Ingrid Gamst and Rong, Harry and Tangstad, Merete and Tveit, Halvard}, publisher = {Department of Materials Science and Engineering, Norwegian University of Science and Technology}, address = {Trondheim}, pages = {95 -- 106}, abstract = {A new method for accurate and precise determination of non-metallic and metallic impurities in silicon was developed and statistically validated. The first step is the fast dissolution of silicon in a microwave-assisted high pressure system to minimize a loss of phosphorus. The essential innovation is the use of the concentrated digestion solution for ICP-OES measurements. This approach avoids the common removal of the silicon and acid matrix by volatilization, which can cause considerable losses of boron. Finally, for the ICP-OES measurements in such high-silicon matrices the optimum measuring conditions were determined and a careful selection of emission lines with respect to selectivity, spectral and non-spectral inferences and matrix effects was performed. The method of matrix matched calibration (MMC) is used for quantification of the impurities' contents. For Al, Mg, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zr and P the validation was performed against certified reference materials (IPT134, IPT135, NIST57b). To validate the determination of boron 9 silicon samples of different boron contents from three interlaboratory comparisons were used. The new procedure allows the determination of impurities of 4N-silicon (12 elements) with high precision and accuracy.}, language = {en} }