@misc{MahadevaiahPerezLiskeretal.,
author = {Mahadevaiah, Mamathamba Kalishettyhalli and P{\´e}rez, Eduardo and Lisker, Marco and Schubert, Markus Andreas and Perez-Bosch Quesada, Emilio and Wenger, Christian and Mai, Andreas},
title = {Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers},
series = {Electronics : open access journal},
volume = {11},
journal = {Electronics : open access journal},
number = {10},
issn = {2079-9292},
doi = {10.3390/electronics11101540},
pages = {14},
abstract = {The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I-V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.},
language = {en}
}
@misc{SeifarthSchubertGiussanietal.,
author = {Seifarth, Olaf and Schubert, Markus Andreas and Giussani, A. and Klenov, D. O. and Schmeißer, Dieter and Schroeder, Thomas},
title = {Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure},
volume = {108},
number = {10},
issn = {1089-7550},
pages = {103709},
language = {en}
}
@misc{ZaumseilYamamotoBaueretal.,
author = {Zaumseil, Peter and Yamamoto, Yuji and Bauer, Joachim and Schubert, Markus Andreas and Matejova, Jana and Kozłowski, Grzegorz and Schr{\"o}der, Thomas and Tillack, Bernd},
title = {Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate},
series = {Thin Solid Films},
volume = {520},
journal = {Thin Solid Films},
number = {8},
issn = {0040-6090},
doi = {10.1016/j.tsf.2011.10.178},
pages = {3240 -- 3244},
language = {en}
}
@misc{KozłowskiZaumseilSchubertetal.,
author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas},
title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars},
series = {Nanotechnology},
volume = {23},
journal = {Nanotechnology},
number = {11},
issn = {0957-4484},
doi = {10.1088/0957-4484/23/11/115704},
pages = {115704 -- 115711},
language = {en}
}
@misc{ZoellnerDabrowskiZaumseiletal.,
author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas},
title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems},
series = {Physical Review},
volume = {85},
journal = {Physical Review},
number = {3},
issn = {1098-0121},
doi = {10.1103/PhysRevB.85.035302},
pages = {035302 -- 035311},
language = {en}
}
@misc{SkibitzkiHatamiYamamotoetal.,
author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas},
title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study},
series = {Journal of Applied Physics},
volume = {111},
journal = {Journal of Applied Physics},
number = {7},
issn = {0021-8979},
doi = {10.1063/1.3701583},
pages = {073515 -- 073515-9},
language = {en}
}
@misc{TarnawskaZaumseilSchubertetal.,
author = {Tarnawska, Lidia Lupina and Zaumseil, Peter and Schubert, Markus Andreas and Okur, S. and Morkoc, H. and Paszkiewicz, R. and Storck, Peter and Schroeder, Thomas},
title = {Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)},
series = {Journal of Applied Physics},
volume = {111},
journal = {Journal of Applied Physics},
number = {7},
issn = {0021-8979},
doi = {10.1063/1.3699201},
pages = {073509 -- 073509-4},
language = {en}
}
@misc{ZaumseilKozłowskiYamamotoetal.,
author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas},
title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)},
series = {Journal of Applied Physics},
volume = {112},
journal = {Journal of Applied Physics},
number = {4},
issn = {0021-8979},
pages = {043506 -- 043511},
language = {en}
}
@misc{ZaumseilKozłowskiSchubertetal.,
author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas},
title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars},
series = {Nanotechnology},
volume = {23},
journal = {Nanotechnology},
number = {35},
issn = {1361-6528},
pages = {355706},
language = {en}
}
@misc{BauerYamamotoZaumseiletal.,
author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd},
title = {Nanostructured Silicon for Ge Nanoheteroepitaxy},
series = {Microelectronics Engineering},
volume = {97},
journal = {Microelectronics Engineering},
issn = {0167-9317},
pages = {169 -- 172},
language = {en}
}
@misc{SowinskaBertaudWalczyketal.,
author = {Sowinska, Małgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Schubert, Markus Andreas and Lukosius, Mindaugas and Drube, W. and Walczyk, Christian and Schr{\"o}der, Thomas},
title = {Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures},
series = {Applied Physics Letters},
volume = {100},
journal = {Applied Physics Letters},
number = {23},
issn = {0003-6951},
pages = {233509 -- 233514},
language = {en}
}
@misc{ZaumseilKozłowskiYamamotoetal.,
author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Schubert, Markus Andreas and Schroeder, Thomas},
title = {X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates},
series = {Journal of Applied Crystallography},
volume = {46},
journal = {Journal of Applied Crystallography},
number = {4},
issn = {0021-8898},
pages = {868 -- 873},
language = {en}
}
@misc{NiuZaumseilSchubertetal.,
author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas},
title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring},
series = {Applied Physics Letters},
volume = {102},
journal = {Applied Physics Letters},
pages = {011906-1 -- 011906-5},
language = {en}
}
@misc{KleebergSchubertKoschorrecketal.,
author = {Kleeberg, Andreas and Schubert, Hendrik and Koschorreck, Matthias and Nixdorf, Brigitte},
title = {Abundance and primary production of filamentous green algae Zygogonium ericetorum in an extremly acid (pH 2.9) mining lake and its impact on alkalinity generation},
series = {Freshwater Biology},
volume = {51},
journal = {Freshwater Biology},
number = {5},
issn = {1365-2427},
doi = {10.1111/j.1365-2427.2006.01542.x},
pages = {925 -- 937},
language = {en}
}
@inproceedings{KleebergSchubertKoschorrecketal.,
author = {Kleeberg, Andreas and Schubert, Hendrik and Koschorreck, Matthias and Nixdorf, Brigitte},
title = {Biomasse und Prim{\"a}r-produktion der f{\"a}digen Gr{\"u}nalge Zygogonium ericetorum in einem extrem sauren (pH 2,9) Tagebausee und ihr Einfluss auf die biogene Alkalinit{\"a}tsbildung},
series = {Erweiterte Zusammenfassung der Jahrestagung der DGL 2004 in Potsdam},
booktitle = {Erweiterte Zusammenfassung der Jahrestagung der DGL 2004 in Potsdam},
publisher = {Weißensee Verlag},
address = {Berlin},
isbn = {3-89998-060-3},
pages = {199 -- 2003},
language = {de}
}
@misc{KleebergSchubert,
author = {Kleeberg, Andreas and Schubert, Hendrik},
title = {Vertical gradients in particle distribution and its elemental composition under oxic and anoxic conditions in a eutrophic lake, Scharm{\"u}tzelsee},
series = {Archiv f{\"u}r Hydrobiologie},
volume = {148},
journal = {Archiv f{\"u}r Hydrobiologie},
number = {2},
issn = {0003-9136},
pages = {187 -- 207},
language = {en}
}
@misc{ZaumseilYamamotoSchubertetal.,
author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Tillack, Bernd},
title = {Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates},
series = {Thin Solid Films},
volume = {557},
journal = {Thin Solid Films},
issn = {0040-6090},
pages = {50 -- 54},
language = {en}
}
@misc{KalettaWipfFraschkeetal.,
author = {Kaletta, Udo Christian and Wipf, Christian and Fraschke, Mirko and Wolansky, Dirk and Schubert, Markus Andreas and Schroeder, Thomas and Wenger, Christian},
title = {AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss},
series = {IEEE Transactions on Electron Devices},
volume = {62},
journal = {IEEE Transactions on Electron Devices},
number = {3},
issn = {0018-9383},
doi = {10.1109/TED.2015.2395443},
pages = {764 -- 768},
language = {en}
}
@misc{NiuCapelliniLupinaetal.,
author = {Niu, Gang and Capellini, Giovanni and Lupina, Grzegorz and Niermann, Tore and Salvalaglio, Marco and Marzegalli, Anna and Schubert, Markus Andreas and Zaumseil, Peter and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Montalenti, Francesco and Xie, Ya-Hong and Schr{\"o}der, Thomas},
title = {Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns},
series = {ACS Applied Materials and Interfaces},
volume = {8},
journal = {ACS Applied Materials and Interfaces},
number = {3},
issn = {1944-8252},
pages = {2017 -- 2026},
language = {en}
}
@misc{ZaumseilSchubertYamamotoetal.,
author = {Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Skibitzki, Oliver and Capellini, Giovanni and Schr{\"o}der, Thomas},
title = {Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon},
series = {Solid State Phenomena},
volume = {242},
journal = {Solid State Phenomena},
issn = {1662-9779},
doi = {10.4028/www.scientific.net/SSP.242.402},
pages = {402 -- 407},
language = {en}
}
@misc{TaokaCapelliniDrieschetal.,
author = {Taoka, Noriyuki and Capellini, Giovanni and Driesch, Nils von den and Buca, Dan and Zaumseil, Peter and Schubert, Markus Andreas and Klesse, Wolfgang Matthias and Montanari, Michele and Schr{\"o}der, Thomas},
title = {Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer},
series = {Applied Physics Express},
volume = {9},
journal = {Applied Physics Express},
number = {3},
issn = {1882-0786},
doi = {10.7567/APEX.9.031201},
pages = {031201},
language = {en}
}
@misc{NiuCapelliniSchubertetal.,
author = {Niu, Gang and Capellini, Giovanni and Schubert, Markus Andreas and Niermann, Tore and Zaumseil, Peter and Katzer, Jens and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Xie, Ya-Hong and K{\"a}nel, Hans von and Schr{\"o}der, Thomas},
title = {Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers},
series = {Scientific Reports},
volume = {6},
journal = {Scientific Reports},
issn = {2045-2322},
doi = {10.1038/srep22709},
pages = {22709},
language = {en}
}
@misc{NiuCapelliniHatamietal.,
author = {Niu, Gang and Capellini, Giovanni and Hatami, Fariba and Bartolomeo, Antonio di and Niermann, Tore and Hameed, Hussein Emad and Schubert, Markus Andreas and Krause, Hans-Michael and Zaumseil, Peter and Skibitzki, Oliver and Masselink, William T. and Lehmann, Michael and Xie, Ya-Hong and Schr{\"o}der, Thomas},
title = {Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure},
series = {ACS Applied Materials and Interfaces},
volume = {8},
journal = {ACS Applied Materials and Interfaces},
number = {40},
issn = {1944-8244},
doi = {10.1021/acsami.6b09592},
pages = {26948 -- 26955},
language = {en}
}
@misc{SkibitzkiCapelliniYamamotoetal.,
author = {Skibitzki, Oliver and Capellini, Giovanni and Yamamoto, Yuji and Zaumseil, Peter and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Ballabio, Andrea and Bergamaschini, Roberto and Salvalaglio, Marco and Miglio, Leo and Montalenti, Francesco},
title = {RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars},
series = {ACS Applied Materials and Interfaces},
volume = {8},
journal = {ACS Applied Materials and Interfaces},
number = {39},
issn = {1944-8244},
doi = {10.1021/acsami.6b07694},
pages = {26374 -- 26380},
language = {en}
}
@misc{SchlykowKlesseNiuetal.,
author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas},
title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)},
series = {Applied Physics Letters},
volume = {109},
journal = {Applied Physics Letters},
number = {20},
issn = {1077-3118},
doi = {10.1063/1.4967500},
pages = {202102},
language = {en}
}
@misc{LukosiusDabrowskiLiskeretal.,
author = {Lukosius, Mindaugas and Dabrowski, Jarek Marek and Lisker, Marco and Kitzmann, Julia and Schulze, Sebastian and Lippert, Gunther and Fursenko, Oksana and Yamamoto, Yuji and Schubert, Markus Andreas and Krause, Hans-Michael and Wolff, Andre and Mai, A. and Schr{\"o}der, Thomas and Lupina, Grzegorz},
title = {Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates},
series = {ACS Applied Materials and Interfaces},
volume = {8},
journal = {ACS Applied Materials and Interfaces},
number = {49},
issn = {1944-8244},
doi = {10.1021/acsami.6b11397},
pages = {33786 -- 33793},
language = {en}
}
@misc{GrzelaCapelliniKoczorowskietal.,
author = {Grzela, Tomasz and Capellini, Giovanni and Koczorowski, Wojciech and Schubert, Markus Andreas and Czajka, Ryszard and Curson, Neil J. and Heidmann, Inga and Schmidt, Thomas and Falta, Jens and Schr{\"o}der, Thomas},
title = {Growth and evolution of nickel - germanide nanonstructures on Ge(001)},
series = {Nanotechnology},
volume = {26},
journal = {Nanotechnology},
number = {38},
issn = {1361-6528},
pages = {385701},
language = {en}
}
@misc{SchlykowManganelliRoemeretal.,
author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita},
title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas},
series = {Nanotechnology},
volume = {31},
journal = {Nanotechnology},
number = {34},
issn = {1361-6528},
doi = {10.1088/1361-6528/ab91ef},
pages = {11},
language = {en}
}
@misc{MoralesMahmoodinezhadSchubertetal.,
author = {Morales, Carlos and Mahmoodinezhad, Ali and Schubert, Andreas Markus and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo},
title = {Functional ultra-thin oxide films deposited by atomic layer deposition on structured substrates},
series = {Verhandlungen der DPG - SurfaceScience21},
volume = {2021},
journal = {Verhandlungen der DPG - SurfaceScience21},
publisher = {Deutsche Physikalische Gesellschaft e.V.},
address = {Bad Honnef},
abstract = {In the last decades, atomic layer deposition (ALD) has gained prominence in the materials and surface science communities owing to its high potential for integration as a scalable process in microelectronics. ALD's largest strengths are its well-controlled layer-by-layer deposition and growth conformity on 3D structures. Yet, the ALD technique is also well known to lead to amorphous and defective, non-stoichiometric thin films, resulting in modified materials properties that may even preferentially be used in certain applications. To study these issues, we have developed an in-situ ALD reactor attached to an X-ray photoelectron spectroscopy (XPS) system, capable of switching between both pump and flow-type operation. This novel tool allows to cover the entire range of compounds and recipes used in ALD, thus clarifying the role of such defects at different deposition stages, growth conditions and film/substrate interfaces. To exemplify these sorts of studies, we show the deposition of Al2O3 5-10 nm films on nanostructured Si, and their use as substrates for functional CeOx ALD deposits.},
language = {en}
}
@misc{PerezBoschQuesadaRomeroZalizPerezetal.,
author = {P{\´e}rez-Bosch Quesada, Emilio and Romero-Zaliz, Roc{\´i}o and P{\´e}rez, Eduardo and Mahadevaiah, Mamathamba Kalishettyhalli and Reuben, John and Schubert, Markus Andreas and Jim{\´e}nez-Molinos, Francisco and Rold{\´a}n, Juan Bautista and Wenger, Christian},
title = {Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems},
series = {Electronics (MDPI)},
volume = {10},
journal = {Electronics (MDPI)},
number = {6},
issn = {2079-9292},
doi = {10.3390/electronics10060645},
pages = {13},
abstract = {In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.},
language = {en}
}
@techreport{HollwegBoehmFastetal.,
author = {Hollweg, Heinz-Dieter and B{\"o}hm, Uwe and Fast, Irina and Hennemuth, Barbara and Keuler, Klaus and Keup-Thiel, Elke and Lautenschlager, Michael and Legutke, Stephanie and Radtke, Kai and Rockel, Burkhardt and Schubert, Martina and Will, Andreas and Woldt, Michael and Wunram, Claudia},
title = {Ensemble Simulations over Europe with the Regional Climate Model CLM forced with IPCC AR4 Global Scenarios},
publisher = {Max-Planck-Institut f{\"u}r Meteorologie},
address = {Hamburg},
doi = {10.2312/WDCC/MaD_TeReport_No03},
pages = {152},
abstract = {Regional climate projections have been performed for Europe with the climate version CLM (version 3.1) of the 'Lokal-Modell' (LM) of the German Meteorological Service. CLM has been forced with output of the ECHAM5/MPIOM global climate model of the Max Planck Institute for Meteorology, which contributed to the fourth climate assessment report (AR4) of the International Panel on Climate Change (IPCC). The results of the global model for the IPCC A1B and B1 scenarios as well as the reconstruction of the last four decades of the 20th century (20C3M) for the AR4 are dynamically scaled down to the CLM grid cell size of about 18×18 km2. Climatological parameters including all model variables and additional quantities characterising the climate are available from the World Data Centre for Climate database run by the German climate service group Model and Data. They can be accessed by the general public at no costs with the help of M and D. In particular, the 'Service Group Adaptation' (SGA) has been established at M and D to assist adaptation projects funded by the German Federal Ministry of Education and Research (BMBF) giving advice on the interpretation of the CLM model results.},
language = {en}
}
@misc{FranckDabrowskiSchubertetal.,
author = {Franck, Max and Dabrowski, Jaroslaw and Schubert, Markus Andreas and Wenger, Christian and Lukosius, Mindaugas},
title = {Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition},
series = {Nanomaterials},
volume = {12},
journal = {Nanomaterials},
number = {19},
issn = {2079-4991},
doi = {10.3390/nano12193260},
abstract = {The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10-7-10-3 mbar and 900-980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2-3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3-10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth},
language = {en}
}
@misc{WeisshauptSuergersBloosetal.,
author = {Weißhaupt, David and S{\"u}rgers, Christoph and Bloos, Dominik and Funk, Hannes Simon and Oehme, Michael and Fischer, Gerda and Schubert, Markus Andreas and Wenger, Christian and van Slageren, Joris and Fischer, Inga Anita and Schulze, J{\"o}rg},
title = {Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas},
series = {Semiconductor Science and Technology},
volume = {39},
journal = {Semiconductor Science and Technology},
number = {12},
publisher = {IOP Publishing},
issn = {0268-1242},
doi = {10.1088/1361-6641/ad8d06},
pages = {1 -- 10},
abstract = {Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.},
language = {en}
}
@misc{HayatRatzkeAlvaradoChavarinetal.,
author = {Hayat, Ahsan and Ratzke, Markus and Alvarado Chavarin, Carlos and Z{\"o}llner, Marvin Hartwig and Corley-Wiciak, Agnieszka Anna and Schubert, Markus Andreas and Wenger, Christian and Fischer, Inga Anita},
title = {Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration},
series = {Thin Solid Films},
volume = {807},
journal = {Thin Solid Films},
issn = {0040-6090},
doi = {10.1016/j.tsf.2024.140547},
pages = {3},
language = {en}
}
@misc{FritscherUhlmannOstrovskyyetal.,
author = {Fritscher, Markus and Uhlmann, Max and Ostrovskyy, Philip and Reiser, Daniel and Chen, Junchao and Schubert, Andreas and Schulze, Carsten and Kahmen, Gerhard and Fey, Dietmar and Reichenbach, Marc and Krstic, Milos and Wenger, Christian},
title = {Area-efficient digital design using RRAM-CMOS standard cells},
series = {2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)},
volume = {18},
journal = {2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)},
publisher = {IEEE},
isbn = {979-8-3503-5411-9},
issn = {2159-3477},
doi = {10.1109/ISVLSI61997.2024.00026},
pages = {81 -- 87},
abstract = {Extending the scalability of digital integrated circuits through novel device concepts is an attractive option. Among these concepts, resistive random access memory (RRAM) devices allow fast and nonvolatile operation. However, building large memristive systems is still challenging since large analog circuits have to be designed and integrated. In this paper, we propose a novel solution - the implementation of digital standard cells by the means of RRAM devices. While this methodology is universal, with applications ranging from few-device-circuits to large macroblocks, we demonstrate it for a 2T2R-cell. The benefits of using RRAM devices are demonstrated by implementing a NAND standard cell merely consuming the area of two transistors. This cell is about 25 \% smaller than the equivalent CMOS NAND in the same technology. We use these cells to implement a half adder, beating the area of the equivalent CMOS implementation using more sophisticates gates by 15 \%. Lastly, we fully integrate this novel standard cell into a digital standard cell library and perform a synthesis and layout of a RISC-V CPU core.},
language = {en}
}
@misc{ReiterHanMaietal.,
author = {Reiter, Sebastian and Han, Weijia and Mai, Christian and Spirito, Davide and Jose, Josmy and Z{\"o}llner, Marvin Hartwig and Fursenko, Oksana and Schubert, Markus Andreas and Stemmler, Ivo and Wenger, Christian and Fischer, Inga Anita},
title = {Titanium Nitride Plasmonic Nanohole Arrays for CMOS-compatible integrated refractive index sensing: influence of layer thickness on optical properties},
series = {Plasmonics},
journal = {Plasmonics},
issn = {1557-1963},
doi = {10.1007/s11468-023-01810-3},
pages = {1 -- 13},
language = {en}
}
@misc{HayatSpiritoCorleyWiciaketal.,
author = {Hayat, Ahsan and Spirito, Davide and Corley-Wiciak, Agnieszka Anna and Schubert, Markus Andreas and Masood, Maria and Reichmann, Felix and Ratzke, Markus and Capellini, Giovanni and Fischer, Inga Anita},
title = {MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates},
series = {Materials Science in Semiconductor Processing},
volume = {165},
journal = {Materials Science in Semiconductor Processing},
issn = {1873-4081},
doi = {10.1016/j.mssp.2023.107693},
language = {en}
}
@misc{UhlmannPerezBoschQuesadaFritscheretal.,
author = {Uhlmann, Max and P{\´e}rez-Bosch Quesada, Emilio and Fritscher, Markus and P{\´e}rez, Eduardo and Schubert, Markus Andreas and Reichenbach, Marc and Ostrovskyy, Philip and Wenger, Christian and Kahmen, Gerhard},
title = {One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing},
series = {21st IEEE Interregional NEWCAS Conference (NEWCAS)},
journal = {21st IEEE Interregional NEWCAS Conference (NEWCAS)},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
isbn = {979-8-3503-0024-6},
issn = {2474-9672},
doi = {10.1109/NEWCAS57931.2023.10198073},
pages = {5},
abstract = {The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.},
language = {en}
}
@misc{MoralesMahmoodinezhadTschammeretal.,
author = {Morales, Carlos and Mahmoodinezhad, Ali and Tschammer, Rudi and Kosto, Yuliia and Alvarado Chavarin, Carlos and Schubert, Markus Andreas and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo},
title = {Combination of Multiple Operando and In-Situ Characterization Techniques in a Single Cluster System for Atomic Layer Deposition: Unraveling the Early Stages of Growth of Ultrathin Al2O3 Films on Metallic Ti Substrates},
series = {Inorganics},
volume = {11},
journal = {Inorganics},
number = {12},
issn = {2304-6740},
doi = {10.3390/inorganics11120477},
abstract = {This work presents a new ultra-high vacuum cluster tool to perform systematic studies of the early growth stages of atomic layer deposited (ALD) ultrathin films following a surface science approach. By combining operando (spectroscopic ellipsometry and quadrupole mass spectrometry) and in situ (X-ray photoelectron spectroscopy) characterization techniques, the cluster allows us to follow the evolution of substrate, film, and reaction intermediates as a function of the total number of ALD cycles, as well as perform a constant diagnosis and evaluation of the ALD process, detecting possible malfunctions that could affect the growth, reproducibility, and conclusions derived from data analysis. The homemade ALD reactor allows the use of multiple precursors and oxidants and its operation under pump and flow-type modes. To illustrate our experimental approach, we revisit the well-known thermal ALD growth of Al2O3 using trimethylaluminum and water. We deeply discuss the role of the metallic Ti thin film substrate at room temperature and 200 °C, highlighting the differences between the heterodeposition (<10 cycles) and the homodeposition (>10 cycles) growth regimes at both conditions. This surface science approach will benefit our understanding of the ALD process, paving the way toward more efficient and controllable manufacturing processes.},
language = {en}
}
@misc{PerezBoschQuesadaRizziGuptaetal.,
author = {Perez-Bosch Quesada, Emilio and Rizzi, Tommaso and Gupta, Aditya and Mahadevaiah, Mamathamba Kalishettyhalli and Schubert, Andreas and Pechmann, Stefan and Jia, Ruolan and Uhlmann, Max and Hagelauer, Amelie and Wenger, Christian and P{\´e}rez, Eduardo},
title = {Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing},
series = {14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023},
journal = {14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
isbn = {979-8-3503-0240-0},
doi = {10.1109/CDE58627.2023.10339525},
pages = {4},
abstract = {This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications. Index Terms—radiation-hard, hardness-by-design, memristive devices, Enclosed Layout Transistor, in-memory computing},
language = {en}
}
@misc{FranckDabrowskiSchubertetal.,
author = {Franck, Max and Dabrowski, Jarek and Schubert, Markus Andreas and Vignaud, Dominique and Achehboune, Mohamed and Colomer, Jean-Fran{\c{c}}ois and Henrard, Luc and Wenger, Christian and Lukosius, Mindaugas},
title = {Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si},
series = {Advanced Materials Interfaces},
volume = {12},
journal = {Advanced Materials Interfaces},
number = {1},
publisher = {Wiley},
issn = {2196-7350},
doi = {10.1002/admi.202400467},
pages = {9},
abstract = {AbstractThe chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high-quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well understood yet. The influence of local changes in pressure and temperature due to different reactor configurations on the structure and quality of hBN films grown on Ge(001)/Si is studied. Injection of the borazine precursor close to the sample surface results in an inhomogeneous film thickness, attributed to an inhomogeneous pressure distribution at the surface, as shown by computational fluid dynamics simulations. The additional formation of nanocrystalline islands is attributed to unfavorable gas phase reactions due to the radiative heating of the injector. Both issues are mitigated by increasing the injector-sample distance, leading to an 86\% reduction in pressure variability on the sample surface and a 200 °C reduction in precursor temperature. The resulting hBN films exhibit no nanocrystalline islands, improved thickness homogeneity, and high crystalline quality (Raman FWHM = 23 cm-1). This is competitive with hBN films grown on other non-metal substrates but achieved at lower temperature and with a low thickness of only a few nanometers.},
language = {en}
}
@misc{MoralesGertigKotetal.,
author = {Morales, Carlos and Gertig, Max and Kot, Małgorzata and Alvarado, Carlos and Schubert, Markus Andreas and Zoellner, Marvin Hartwig and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo},
title = {In situ X-ray photoelectron spectroscopy study of atomic layer deposited cerium oxide on SiO₂ : substrate influence on the reaction mechanism during the early stages of growth},
series = {Advanced materials interfaces},
volume = {12},
journal = {Advanced materials interfaces},
number = {5},
publisher = {Wiley},
address = {Weinheim},
issn = {2196-7350},
doi = {10.1002/admi.202400537},
pages = {1 -- 13},
abstract = {Thermal atomic layer deposition (ALD) of cerium oxide using commercial Ce(thd)4 precursor and O3 on SiO2 substrates is studied employing in-situ X-ray photoelectron spectroscopy (XPS). The system presents a complex growth behavior determined by the change in the reaction mechanism when the precursor interacts with the substrate or the cerium oxide surface. During the first growth stage, non-ALD side reactions promoted by the substrate affect the growth per cycle, the amount of carbon residue on the surface, and the oxidation degree of cerium oxide. On the contrary, the second growth stage is characterized by a constant growth per cycle in good agreement with the literature, low carbon residues, and almost fully oxidized cerium oxide films. This distinction between two growth regimes is not unique to the CeOx/SiO2 system but can be generalized to other metal oxide substrates. Furthermore, the film growth deviates from the ideal layer-by-layer mode, forming micrometric inhomogeneous and defective flakes that eventually coalesce for deposit thicknesses above 10 nm. The ALD-cerium oxide films present less order and a higher density of defects than films grown by physical vapor deposition techniques, likely affecting their reactivity in oxidizing and reducing conditions.},
language = {en}
}
@misc{KalraAlvaradoChavarinNitschetal.,
author = {Kalra, Amanpreet and Alvarado Chavarin, Carlos and Nitsch, Paul-Gregor and Tschammer, Rudi and Flege, Jan Ingo and Ratzke, Markus and Zoellner, Marvin Hartwig and Schubert, Markus Andreas and Wenger, Christian and Fischer, Inga Anita},
title = {Deposition of CeOₓ/SnOₓ-based thin films via RF magnetron sputtering for resistive gas sensing applications},
series = {Physica B, Condensed matter},
volume = {723},
journal = {Physica B, Condensed matter},
publisher = {Elsevier BV},
address = {Amsterdam},
issn = {0921-4526},
doi = {10.1016/j.physb.2025.418098},
pages = {1 -- 7},
abstract = {Cerium oxide-tin oxide (CeOx/SnOx) thin films with varying Sn content were deposited using RF magnetron sputtering and investigated for hydrogen sensing applications. Structural, compositional, and morphological properties were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). Gas sensing measurements showed effective hydrogen detection at room temperature, with the sensitivity strongly influenced by Sn content and oxygen vacancy concentration. Higher Sn concentration enhanced the sensing response, which was correlated with microstructural features obtained from AFM and EDX, as well as with the presence of Ce3+ and Ce4+ oxidation states identified by XPS. This study highlights the potential of CeOx/SnOx thin films for possible back-end-of-line integration and provides proof-of-principle for room-temperature hydrogen sensing.},
language = {en}
}