@misc{ReiterHanMaietal., author = {Reiter, Sebastian and Han, Weijia and Mai, Christian and Spirito, Davide and Jose, Josmy and Z{\"o}llner, Marvin Hartwig and Fursenko, Oksana and Schubert, Markus Andreas and Stemmler, Ivo and Wenger, Christian and Fischer, Inga Anita}, title = {Titanium Nitride Plasmonic Nanohole Arrays for CMOS-Compatible Integrated Refractive Index Sensing: Influence of Layer Thickness on Optical Properties}, series = {Plasmonics}, journal = {Plasmonics}, issn = {1557-1963}, doi = {10.1007/s11468-023-01810-3}, pages = {1 -- 13}, language = {en} } @misc{ZaumseilKozłowskiSchubertetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, pages = {355706}, language = {en} } @misc{BauerYamamotoZaumseiletal., author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd}, title = {Nanostructured Silicon for Ge Nanoheteroepitaxy}, series = {Microelectronics Engineering}, volume = {97}, journal = {Microelectronics Engineering}, issn = {0167-9317}, pages = {169 -- 172}, language = {en} } @misc{SkibitzkiHatamiYamamotoetal., author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas}, title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3701583}, pages = {073515 -- 073515-9}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)}, series = {Journal of Applied Physics}, volume = {112}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043506 -- 043511}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, Markus Andreas and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates}, series = {Thin Solid Films}, volume = {557}, journal = {Thin Solid Films}, issn = {0040-6090}, pages = {50 -- 54}, language = {en} } @misc{UhlmannPerezBoschQuesadaFritscheretal., author = {Uhlmann, Max and P{\´e}rez-Bosch Quesada, Emilio and Fritscher, Markus and P{\´e}rez, Eduardo and Schubert, Markus Andreas and Reichenbach, Marc and Ostrovskyy, Philip and Wenger, Christian and Kahmen, Gerhard}, title = {One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing}, series = {21st IEEE Interregional NEWCAS Conference (NEWCAS)}, journal = {21st IEEE Interregional NEWCAS Conference (NEWCAS)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-0024-6}, issn = {2474-9672}, doi = {10.1109/NEWCAS57931.2023.10198073}, pages = {5}, abstract = {The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.}, language = {en} }