@inproceedings{EllingerMeisterGrosaetal., author = {Ellinger, Frank and Meister, Tilo and Grosa, Patrick and Jamshidi, Kambiz and Ihle, David and Franchi, Norman and Wagner, Jens and Richter, Andreas and Fettweis, Gerhard and Fitzek, Frank and Kreissig, Martin and Klessig, Henrik and Kraemer, Rolf and Richter, Klaus and Frotzscher, Andreas and L{\"o}hr, Robert and Winkler, Wolfgang and Zoeke, Dominik and Carot, Alexander and Bluschke, Andreas}, title = {Project FAST - Fast Actuators Sensors \& Transceivers}, series = {Microwave Conference (LAMC), IEEE MTT-S Latin America, 12-14 Dec. 2016 Puerto Vallarta, Mexico}, booktitle = {Microwave Conference (LAMC), IEEE MTT-S Latin America, 12-14 Dec. 2016 Puerto Vallarta, Mexico}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-4287-6}, pages = {3}, language = {en} } @article{BeblikRichterSchmalstiegetal., author = {Beblik, Andreas J. and Richter, G. M. and Schmalstieg, K. and Richter, O.}, title = {N-dynamics and nitrate leaching under rotational and continuous set-aside - a case study at the field and catchment scale}, language = {en} } @incollection{BilzSudeckBuckschetal., author = {Bilz, Ludwig and Sudeck, Gorden and Bucksch, Jens and Klocke, Andreas and Kolip, Petra and Melzer, Wolfgang and Ravens-Sieberer, Ulrike and Richter, Matthias}, title = {Der vierte deutsche Jugendgesundheitssurvey „Health Behaviour in School-aged Children"}, series = {Schule und Gesundheit : Ergebnisse des WHO-Jugendgesundheitssurveys "Health behaviour in school-aged children"}, booktitle = {Schule und Gesundheit : Ergebnisse des WHO-Jugendgesundheitssurveys "Health behaviour in school-aged children"}, editor = {Bilz, Ludwig and Sudeck, Gorden and Bucksch, Jens and Klocke, Andreas and Kolip, Petra and Melzer, Wolfgang and Ravens-Sieberer, Ulrike and Richter, Matthias}, publisher = {Beltz Juventa}, address = {Weinheim}, isbn = {978-3-7799-1991-9}, pages = {7 -- 15}, language = {de} } @misc{StrobelAlvaradoChavarinRichteretal., author = {Strobel, Carsten and Alvarado Chavarin, Carlos and Richter, Karola and Knaut, Martin and Reif, Johanna and Völkel, Sandra and Jahn, Andreas and Albert, Matthias and Wenger, Christian and Kirchner, Robert and Bartha, Johann Wolfgang and Mikolajick, Thomas}, title = {Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain}, series = {ACS Applied Materials \& Interfaces}, volume = {14}, journal = {ACS Applied Materials \& Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.2c10634}, pages = {39249 -- 39254}, abstract = {A graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal-insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon-graphene-germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality was demonstrated. Additionally, a capacitance model is applied to predict the theoretical device performance resulting in an on-off ratio above 106, a swing of 87 mV/dec, and a drivecurrent of about 1 × 106 A/cm2.}, language = {en} }