@misc{MaiMarschmeyerPeczeketal., author = {Mai, Christian and Marschmeyer, Steffen and Peczek, Anna and Kroh, Aleksandra and Jose, Josmy and Reiter, Sebastian and Fischer, Inga Anita and Wenger, Christian and Mai, Andreas}, title = {Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology}, series = {ECS Transactions}, volume = {109}, journal = {ECS Transactions}, number = {4}, issn = {1938-5862}, doi = {10.1149/10904.0035ecst}, pages = {35 -- 46}, abstract = {In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 \% and RMS of 1.413 nm for 150 nm thick TiN layers.}, language = {en} } @misc{MaiPeczekKrohetal., author = {Mai, Christian and Peczek, Anna and Kroh, Aleksandra and Jose, Josmy and Reiter, Sebastian and Wenger, Christian and Fischer, Inga Anita}, title = {Towards a CMOS compatible refractive index sensor: cointegration of TiN nanohole arrays and Ge photodetectors in a 200 mm wafer silicon technology}, series = {Optics Express}, volume = {32}, journal = {Optics Express}, number = {17}, publisher = {Optica Publishing Group}, issn = {1094-4087}, doi = {10.1364/OE.530081}, pages = {29099 -- 29111}, abstract = {In this work, we present the monolithic integration of a TiN nanohole array and a Ge photodetector towards a CMOS compatible fabrication of a refractive index sensor in a 200 mm wafer silicon technology. We developed a technology process that enables fabrication with high yields of around 90\%. Ge photodetectors with a Ge layer thickness of 450 nm and an area of 1600 µm2 (40 µm x 40 µm) show dark current densities of around 129 mA/cm2 and responsivities of 0.114 A/W measured by top illumination (TE polarization; λ = 1310 nm; angle of incidence = 14 °) at a reverse bias of 1 V. Nanohole arrays were structured in a 150 nm thick TiN layer. They were integrated into the back end of line and placed spatially close to the Ge photodetectors. After the metallization, passivation, and pad opening, the nanohole arrays were released with the help of an amorphous silicon stop layer. A significant impact of the TiN nanohole arrays on the optical behavior of the photodetector could be proven on the wafer level. Photocurrent measurements by top illumination confirm a strong dependence of optical properties on the polarization of the incident light and the nanohole array design. We demonstrate very stable photocurrents on the wafer level with a standard deviation of σ \< 6\%.}, language = {en} }