TY - CONF A1 - Herold, Steven A1 - Acker, Jörg A2 - Scheschkewitz, David A2 - Kickelbick, Guido T1 - The influence of lattice deformations on the etch rates of potassium hydroxide on silicon T2 - 9th European Silicon Days, 9-12 September 2018, Saarbrücken, Germany, Book of abstracts N2 - One of the most common methods to analyse silicon materials is Raman-spectroscopy.[1] More recently there is a focus in the analysis of lattice deformations during sample preparations.[2] These deformations not only increase the chance of crack formation but also increases the chemical reactivity of the silicon towards etch processes or oxidation processes.[3] In this contribution, we will present our latest results on the influence of lattice deformations induced by scratches and saw damage on the etch rate of potassium hydroxide. The lattice deformation will be measured using Raman-microscopy and correlated with the height difference measured with confocal microscopy. It will be shown that the etch rate strongly depends on the lattice deformation and that the etch rate will increase by up to the factor 10 in areas with tensile deformation. KW - silicon KW - etching KW - Raman spectroscopy KW - lattice strain KW - saw damage KW - confocal microscopy Y1 - 2019 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/23413 SP - S. 198 PB - Universität des Saarlandes CY - Saarbrücken ER -