TY - GEN A1 - Perez-Avila, Antonio Javier A1 - Gonzalez-Cordero, Gerardo A1 - Perez, Eduardo A1 - Perez-Bosch Quesada, Emilio A1 - Mahadevaiah, Mamathamba Kalishettyhalli A1 - Wenger, Christian A1 - Roldan, Juan Bautista A1 - Jimenez-Molinos, Francisco T1 - Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation T2 - XXXV Conference on Design of Circuits and Integrated Systems (DCIS), Segovia, Spain N2 - An artificial neural network based on resistive switching memristors is implemented and simulated in LTspice. The influence of memristor variability and the reduction of the continuous range of synaptic weights into a discrete set of conductance levels is analyzed. To do so, a behavioral model is proposed for multilevel resistive switching memristors based on Al-doped HfO2 dielectrics, and it is implemented in a spice based circuit simulator. The model provides an accurate description of the conductance in the different conductive states in addition to describe the device-to-device variability KW - RRAM KW - Multilevel switching KW - behavorial model Y1 - 2021 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/27031 ER -