TY - GEN A1 - Akhtar, Fatima A1 - Dabrowski, Jaroslaw A1 - Lukose, Rasuole A1 - Wenger, Christian A1 - Lukosius, Mindaugas T1 - Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and Ge (001) T2 - ACS Applied Materials & Interfaces N2 - For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm–1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm2/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction. KW - Graphene KW - Chemical Vapor Deposition Y1 - 2023 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/31240 SN - 1944-8244 VL - 15 IS - 30 SP - 36966 EP - 36974 ER -