TY - JOUR A1 - Hoffmann, Patrick T1 - Photoemission studies of very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD N2 - The "ITRS Roadmap" suggests the necessity of working out the processing methods allowing formation of ultrathin dielectric layers with higher values of the dielectric permittivity than for silicon dioxide. The silicon oxynitride layers (SiOxNy) seem to be the most natural compromise. But still none of high temperature methods used for its formation can be seriously considered as final solution for future ULSI-CMOS ICs production due to the inevitable formation of nitride monolayers just at the silicon-insulator interface. The main scope of this investigation is to check if this is true. KW - Semiconductors KW - Thin films KW - Vapour deposition KW - Photoelectron spectroscopies KW - Synchrotron radiation Y1 - 2005 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/1996 ER -