TY - GEN A1 - Rietig, Anja A1 - Langner, Thomas A1 - Acker, Jörg A2 - Andresen, Birger A2 - Rong, Harry A2 - Tangstad, Merete A2 - Tveit, Halvard A2 - Page, Ingrid T1 - Advanced insights into the stoichiometry and kinetics of the reaction of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures T2 - Silicon for the Chemical and Solar Industry XV N2 - The stoichiometry and kinetics of wet chemical etching of silicon in HF/HNO3 and HF/HNO3/H2SiF6 mixtures was investigated. The side reactions and main reaction pathways were identified by quantifying all reaction products. The relationship between the concentration of undissociated HNO3 and the consumption of HNO3, as well as the formation of H2 as a function of the mixing ratios were found by varying the etching mixture composition systematically. Based on the etching rates determined, kinetic models for the reaction- and diffusion-controlled reaction mechanism are presented as well as the interrelation between the etchant composition and the transition between reaction- and diffusion-controlled etching. KW - silicon KW - etching KW - Raman KW - etch rate KW - mass spectrometry KW - hydrogen KW - nitrous gases Y1 - 2020 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/25761 SN - 978-82-997357-9-7 SP - 145 EP - 159 PB - The Norwegian University of Science and Technology CY - Trondheim ER -