TY - GEN A1 - Acker, Jörg A1 - Sieber, Tim A1 - Langner, Thomas A1 - Herold, Steven A2 - Andresen, Birger A2 - Nygaard, Lars A2 - Rong, Harry A2 - Tangstad, Merete A2 - Tveit, Halvard A2 - Page, Ingrid Gamst T1 - The impact of lattice strain on the reactivity of silicon T2 - Silicon for the Chemical and Solar Industry XIV N2 - The present study is focused on the question of how lattice strain mechanically introduced into silicon alters the chemical reactivity of the silicon atoms that are affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain are extracted from confocal Raman microscopy measurements. The reactivity of Si is expressed by the etch rate of Si after treatment with HF–HNO3–H2SiF6 mixtures. Then, the local etch rate is calculated from the local etch depth as determined by confocal microscopy. It has been found that tensile strain leads to the highest enhancement of the etch rate, followed by a compressive strain increase in the etch rate. KW - silicon KW - etching KW - Raman spectroscopy KW - lattice strain KW - stress KW - mechanical activation KW - mechanochemistry KW - confocal microscopy Y1 - 2018 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/21984 SP - 11 EP - 20 PB - The Norwegian University of Science and Technology CY - Trondheim ER -