TY - GEN A1 - Gerlach, Dominic A1 - Wippler, David A1 - Wilks, Regan G. A1 - Wimmer, Manuel A1 - Lozac'h, Mickaël A1 - Duarte, Roberto Felix A1 - Ueda, Shigenori A1 - Yoshikawa, Hideki A1 - Lips, Klaus A1 - Rech, Bernd A1 - Sumiya, Masatomo A1 - Kobayashi, Kaoru A1 - Gorgoi, Mihaela A1 - Hüpkes, Jürgen A1 - Bär, Marcus T1 - p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study T2 - IEEE journal of photovoltaics N2 - The chemical and electronic properties of a- Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case. Y1 - 2013 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/9652 SN - 2156-3381 VL - 3 IS - 1 SP - 483 EP - 487 ER -