TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Murrell, Chris A1 - Jakubowicz, J. A1 - Aggour, Mohammed A1 - Kanis, M. A1 - Campbell, S. A. A1 - Cox, P. A. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - High Resolution Surface analysis of Si Roughenning in Dilute Ammonium Fluoride Solution T2 - Journal of Electroanalytical Chemistry N2 - The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm. KW - Porous Si KW - transistors KW - Electropolishing KW - Photoelectron spectroscopy KW - AFM KW - Synchrotron radiation Y1 - 2005 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/1961 SN - 1873-2569 VL - 540 SP - 3 EP - 6 ER -